The Role of Humidity in Tuning the Texture and Electrical Properties of Cu <sub/>2</sub> O Thin Films Deposited via Aerosol‐Assisted CVD

摘要： A study on the effect of carrier gas (CG) humidity on the texture and the resulting electronic properties of Cu2O thin films deposited using aerosol-assisted chemical vapor deposition (AA-CVD) at low temperatures (<365 °C) is reported. By increasing the CG humidity, the preferred orientation of the films can be tuned from [110] to [111]. By studying the initial stages of film deposition, a different growth mode is found for dry and humid conditions, which in turn directs the final texture of the films. The analysis of the electric properties of the films by Hall effect shows that carrier concentration remains in the order of 1015 cm?3 when using both dry and humid conditions. Conversely, Cu2O samples deposited with humid CG generally present a higher mobility, up to 17 cm2 V?1 s?1. [111]-textured Cu2O films with high mobility were used to fabricate a diode by depositing a ZnO layer on top using atmospheric pressure spatial atomic layer deposition (AP-SALD). The diode shows an excellent rectifying behavior with a high asymmetry close to 104 between ?1 and +1 V.