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- 摘要
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Temperature dependence simulation and characterization for InP/InGaAs avalanche photodiodes
摘要: Based on the newly proposed temperature dependent dead space model, the breakdown voltage and bandwidth of InP/InGaAs avalanche photodiode (APD) have been investigated in the temperature range from -50°C to 100°C. It was demonstrated that our proposed model is consistent with the experimental results. Our work may provide a guidance to the design of APDs with controllably low temperature coefficient.
关键词: separate absorption, grading, charge, and multiplication avalanche photodiode (SAGCM APD),optical communication,temperature coefficient,dead space effect
更新于2025-09-23 15:23:52
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Fast neutron detectors with silicon photomultiplier readouts
摘要: This work summarizes a fast neutron detection performance of two different silicon photomultipliers from two manufacturers. The first SiPM (MAPD-3NK) from Zecotek Photonics consists of deeply buried cells with the active area 3.7x3.7 mm2. The second one (MPPC-S12572-010P) from Hamamatsu, however, consists of surface cell structure which the active area is 3x3 mm2. Both SiPMs have the same pixel density of 10000 mm-2. Both SiPMs coupled to Stilbene (5*5*5 mm3) and p-terphenyl (5*5*5 mm3) plastic scintillators were evaluated for detection ability of fast neutrons using a PuBe neutron source. Charge comparison and zero crossing neutron/gamma discrimination techniques were performed for these detectors and the results were compared. The obtained results prove a good fast neutron detection performance of the SiPMs which makes it possible to use these types of neutron detectors in fast neutron detection applications.
关键词: Pulse shape discrimination,Micropixel avalanche photodiode,Charge comparison,SiPM,MAPD,PSD,Zero crossing,Silicon photomultiplier
更新于2025-09-23 15:21:21
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[IEEE 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Brasov, Romania (2019.11.3-2019.11.6)] 2019 8th International Conference on Renewable Energy Research and Applications (ICRERA) - Impacts of Wind Speed and Humidity on the Performance of Photovoltaic Module
摘要: A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词: Avalanche photodiode (APD),excess noise factor,near-infrared detection,impact ionization
更新于2025-09-23 15:19:57
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Evaluation of Chirped Fiber Bragg Grating with APD on Designed Optical Fiber Communication Link
摘要: Application of fiber Bragg grating (FBG) in optical communication is an evolving field. In this research paper, various types of chirped FBG’s (CFBG) have been used with avalanche photodiode (APD) on the designed optical fiber communication (OFC) link. Data rate of 20 Gbps and return-to-zero modulation format has been kept as fixed parameters. The designed link has been evaluated for varying fiber lengths (100, 200, 300, 400 and 500 km), various type of CFBG’s (linear, quadratic, square root and cubic root) with Gaussian apodization function, varying grating lengths (10, 20, 30, 40 and 50 mm) and operating temperatures (5°C, 10°C, 15°C, 20°C, 25°C, 30°C). The designed OFC link has also been evaluated for APD with and without CFBG. The performance evaluation matrix parameters selected are Q-factor, bit error rate and eye diagram. The OFC link employing CFBG with APD has been found to be superior. In compensating chromatic dispersion, optimum results have been observed for linear CFBG with Gaussian apodization function in comparison to other types of CFBG with 50 mm grating length for the maximum transmission distance.
关键词: bit error rate (BER),Optical fiber communication (OFC),eye diagram,chirped fiber Bragg grating (CFBG),vertical cavity surface emitting laser (VCSEL),avalanche photodiode (APD),Q-factor
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Impact of Relaxation Processes on Features of Laser Dyes
摘要: A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词: Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-23 15:19:57
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[IEEE 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Hong Kong (2018.11.5-2018.11.9)] 2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) - Evaluating Two-Photon Absorption Effects on Pulsed High-Power Laser Operation
摘要: Pure gallium and pure boron (PureGaB) Ge-on-Si photodiodes were fabricated in a CMOS compatible process and operated in linear and avalanche mode. Three different pixel geometries with very different area-to-perimeter ratios were investigated in linear arrays of 300 pixels with each a size of 26 × 26 μm2. The processing of anode contacts at the anode perimeters leaving oxide covered PureGaB-only light-entrance windows, created perimeter defects that increased the vertical Ge volume but did not deteriorate the diode ideality. The dark current at 1 V reverse bias was below 35 μA/cm2 at room temperature and below the measurement limit of 2.5 × 10?2 μA/cm2 at 77 K. Spread in dark current levels and optical gain, that reached the range of 106 at 77 K, was lowest for the devices with largest perimeter. All device types were reliably operational in a wide temperature range from 77 K to room temperature. The spectral sensitivity of the detectors extended from visible to the telecom band with responsivities of 0.15 and 0.135 A/W at 850 and 940 nm, respectively.
关键词: Avalanche photodiode (APD),near-infrared photodiode,Ge-on-Si,pure gallium and pure boron (PureGaB)
更新于2025-09-19 17:13:59
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[IEEE 2018 7th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO) - Noida, India (2018.8.29-2018.8.31)] 2018 7th International Conference on Reliability, Infocom Technologies and Optimization (Trends and Future Directions) (ICRITO) - Analyzing the Internal Parameters of Free Space Optical Communication
摘要: Free Space Optical (FSO) Communication is an efficient technology as it offers higher signal bandwidth and less power for transmission. There are some internal parameters on which the performance of the FSO communication depends such as beam divergence, wavelength. The purpose is to optimize these factors to achieve the maximum output and throughput. In this paper FSO model has been designed using PIN Photodiode and Avalanche Photodiode(APD) at receiver’s side. Using the model, Q-Factor has been estimated for different beam divergences and wavelengths at varying bit rates. The results have been compared and analyzed for the two types of photodiodes.
关键词: wavelength,FSO,Beam divergence,Avalanche Photodiode,PIN,Q-Factor
更新于2025-09-19 17:13:59
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Sensitive Infrared Photon Counting Detection by Nondegenerate Two-Photon Absorption in Si APD
摘要: We report on the sensitive detection of photons at broadband infrared wavelengths based on the nondegenerate two-photon absorption in the Si avalanche photodiodes. The detected 1700~1850 nm infrared photon energy is lower than Si band gap and the energy difference is complemented by a high intensity pump laser field at 1550 nm. It is thus possible to capitalize on the low noise property of large band gap materials for detecting low energy photons. And the linear intensity response of the detector to the incident infrared photons was observed when the power of pump laser was about 12.42 μW, indicating the dominance of nondegenerate two-photon absorption in the infrared photon detection. An enhancement factor of 20 was observed for the incident signal photon numbers of ~0.14×106 photons per pulse. We offer an alternative to sensitive detection of infrared light. This may also provide new ideas for broadband infrared photon detection in different applications such as optical comb laser ranging, infrared bio-image and so forth.
关键词: Infrared photon detection,silicon avalanche photodiode,nondegenerate two photon absorption
更新于2025-09-16 10:30:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Narrow bandgap Bi <sub/>2</sub> Te <sub/>3</sub> /Sb <sub/>2</sub> Te <sub/>3</sub> thermophotovoltaic cells
摘要: A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词: Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-16 10:30:52
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[IEEE 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Shenzhen, China (2019.11.25-2019.11.27)] 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Applying LEDs as Therapeutic Light Sources for Anti-microbial Treatment: An Experimental Study
摘要: A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
关键词: Avalanche photodiode (APD),near-infrared detection,impact ionization,excess noise factor
更新于2025-09-16 10:30:52