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Corrugation Enabled Asymmetrically Ultrastretchable (95%) Monocrystalline Silicon Solar Cells with High Efficiency (19%)
摘要： Stretchable solar cells are of growing interest due their key role in realizing many applications such as wearables and biomedical devices. Ultrastretchability, high energy-efficiency, biocompatibility, and mechanical resilience are essential characteristics of such energy harvesting devices. Here, the development of wafer-scale monocrystalline silicon solar cells with world-record ultrastretchability (95%) and efficiency (19%) is demonstrated using a laser-patterning based corrugation technique. The demonstrated approach transforms interdigitated back contacts (IBC) based rigid solar cells into mechanically reliable but ultrastretchable cells with negligible degradation in the electric performance in terms of current density, open-circuit voltage, and fill factor. The corrugation method is based on the creation of alternating grooves resulting in silicon islands with different shapes. The stretchability is achieved by orthogonally aligning the active silicon islands to the applied tensile stress and using a biocompatible elastomer (Ecoflex) as a stretchable substrate. The resulting mechanics ensure that the brittle silicon areas do not experience significant mechanical stresses upon asymmetrical stretching. Different patterns are studied including linear, diamond, and triangular patterns, each of which results in a different stretchability and loss of active silicon area. Finally, finite element method based simulation is conducted to study the generated deformation in the different patterned solar cells.
关键词： stretchable electronics,monocrystalline silicon,photovoltaics,interdigitated back contacts,corrugation
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Direct Laser Patterned Electroplated Copper Contacts for Interdigitated Back Contact Silicon Solar Cells
摘要： Laser patterning of seed layers for Cu electroplated interdigitated contacts on Ni/a-SiNx:H/Si substrates is presented. Damage was controlled by varying the laser conditions. Cu growths shorted the contacts due to conductive residues in the scribe lines, but were attenuated with pre-deposition etching yielding electrically-isolated plated fingers. Parasitically-plated Cu stripes were now observed in laser cuts, postulated due to Cu nucleation from high current densities at pinholes originating from laser and etch damage to the resistive a-SiNx:H. While a promising approach for contact processing, laser conditions must be carefully optimized to minimize substrate damage.
关键词： photovoltaic cells,interdigitated back contacts,copper electrodeposition,laser patterning,silicon
更新于2025-09-19 17:13:59
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An Investigation of Internal Quantum Efficiency of Bifacial Interdigitated Back Contact (IBC) Crystalline Silicon Solar Cell
摘要： In this article, we investigated the internal quantum efficiency (IQE) properties of n-type bifacial interdigitated back contact crystalline silicon solar cells using an IQE mapping system. In the cell structure, high and low IQE values were observed above the emitter and back surface field (BSF) regions. The IQE values above the BSF busbar were drastically reduced due to electrical shading loss. Line scan profiles at different wavelengths showed the detailed distribution of IQE values. The IQE values varied greatly depending not only on the difference between emitter and BSF regions but also on the rear side structure such as the electrode width and the distance between the emitter and BSF regions. On the other hand, the IQE spectra at over 950 nm improved by increasing the light absorbance ratio from the rear side. After module formation, the IQE spectra at short wavelengths were significantly reduced. The IQE properties were obtained from the front and rear sides. The difference in the short-circuit current between front side illumination and rear side illumination was mainly due to optical shading loss and carrier recombination loss at the BSF region. For a high cell efficiency, it is necessary to improve the passivation properties of the BSF region and optimize the electrode design.
关键词： Back contacts,internal quantum efficiency,silicon solar cells
更新于2025-09-12 10:27:22
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[IEEE 2019 54th International Universities Power Engineering Conference (UPEC) - Bucharest, Romania (2019.9.3-2019.9.6)] 2019 54th International Universities Power Engineering Conference (UPEC) - Quality Check during Manufacturing of Custom Photovoltaic Modules with Back-Contact Cells
摘要： The Electroluminescence (EL) analysis and the current-voltage (I-V) curves determination of PhotoVoltaic (PV) generators are the most used diagnosis methods to check the presence of defects. In the present work, these tests are applied to Interdigitated Back Contact (IBC) PV modules with customizable shape after their manufacturing. A defect is detected in a large number of modules, suggesting an issue related to the semi-automatic manufacturing procedure. Therefore, a detailed analysis is carried out to localize the cause of the defect and a preventive action is proposed in order to reduce the occurrence frequency of the defect during manufacturing.
关键词： back contacts,electroluminescence,photovoltaic,electrical contacts,current-voltage characteristic,defects,interdigitated
更新于2025-09-11 14:15:04
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Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Thin‐Film Solar Cells
摘要： Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T< 550 °C. The electrical properties of ATO are even found to improve when CZTS is annealed at T= 534 °C. At T= 580 °C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
关键词： antimony-doped tin oxides,sulfurization,thin-film solar cells,transparent back contacts,Cu2ZnSnS4
更新于2025-09-11 14:15:04
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Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells
摘要： We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm2 (+2.2 mA/cm2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).
关键词： photovoltaic cells,reflective back contacts,ultrathin Cu(In,Ga)Se2,In2O3:Sn
更新于2025-09-11 14:15:04
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The role of NaF post-deposition treatment on the photovoltaic characteristics of semitransparent ultrathin Cu(In,Ga)Se <sub/>2</sub> solar cells prepared on indium-tin-oxide back contacts: a comparative study
摘要： Cu(In,Ga)Se2 (CIGSe) solar cells with absorber thicknesses of <500 nm are important for lowering the cost of photovoltaic (PV)-generated electricity. Moreover, ultrathin bifacial CIGSe solar cells can be prepared on indium-tin-oxide (ITO) back contacts (BCs). In contrast to Mo BCs, ITO BCs suppress the di?usion of Na from soda-lime glass (SLG) to the CIGSe absorber. Na present in the absorber is supposed to ameliorate the PV properties of CIGSe solar cells, but in the absence of Na or when the Na concentration is extremely low, the PV performance is expected to be poor. In this study, a NaF post-deposition treatment (PDT) was applied to a <500 nm thick semitrasparent CIGS absorber prepared by a 1-stage co-evaporation process. A detailed comparison is made between the CIGSe solar cell that underwent the NaF PDT (C–Na) and a reference CIGSe solar cell in which no Na was supplied from an external source (C0). All the PV parameters (i.e., the open-circuit voltage, short-circuit current density, ?ll factor, and e?ciency) of C–Na considerably improved compared with those of C0. To understand the factors that led to this improvement, the solar cells are analyzed by various characterization techniques, including JV measurements, external quantum e?ciency measurements, temperature-dependent measurements of the open-circuit voltage, capacitance–voltage measurements, drive level capacitance pro?lometry, and admittance spectroscopy. Furthermore, the reaction occurring at the CIGSe/ITO interface is investigated with transmission electron microscopy, and the implications of this reaction on the device performance are discussed.
关键词： ultrathin,solar cells,semitransparent,indium-tin-oxide back contacts,NaF post-deposition treatment,Cu(In,Ga)Se2,photovoltaic characteristics
更新于2025-09-11 14:15:04