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Tuning the electronic structure of hexagonal boron nitride by carbon atom modification: a feasible strategy to reduce sliding friction
摘要： Essentially, the interlayer interaction of the two-dimensional (2D) layered material is dominant, so it is expected to modify the electronic configuration of the system to change the interlayer interaction for the purpose of reducing interlayer sliding friction. In this paper, using density functional theory (DFT) calculation, we report an effective method to reduce the sliding friction between the two-layer hexagonal boron nitride layers for changing the hexagonal boron nitride electronic structure via introducing carbon. Research results indicate that the increase of the potential energy fluctuation along the sliding path increases with the increase of the load, which is caused by the difference of the degree of interlayer interaction on the sliding path with the increase of the load; at the same time, we found that the appearance of C at the B or N position can promote the interlayer charge transfer to different extents (B position is better than N position) in the BN/BN bilayer, and then produce the effect of reducing the energy barrier on the sliding path between the layers.
关键词： hexagonal boron nitride,charge transfer,friction,electronic configuration,2D material
更新于2025-09-04 15:30:14
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
摘要： Hexagonal boron nitride is a large band gap layered crystal, frequently incorporated in van der Waals heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer boron nitride barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
关键词： quantum information processing,hexagonal boron nitride,tunnel spectroscopy,localised electronic states,graphene
更新于2025-09-04 15:30:14