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Optimization of Boron Spin on Dopant (BSoD) Diffusion for Emitter Formation in n-type c-Si Solar Cells
摘要： Boron spin on dopant (BSoD) is an alternative boron source to BBr3 liquid dopant for p+ emitter formation in n-type solar cells. In this work, we have used different process control steps to lower the BSoD diffusion issues to have a uniform sheet resistance of p+ emitters. After eliminating the boron (B) precipitates formed during the process of diffusion by control process steps, the emitters have been optimized for sheet resistance values ≤60?/□ with variation less than ±5?/□. The corresponding junction depth is less than 800nm as measured by SIMS analysis. All the experiments are carried out with Czochralski n-type c-Si wafers which showed an improvement of effective minority carrier lifetimes by more than 2 times in controlled process steps. The measured Sun’s Voc and implied Voc are in the range 575- 600mV without any passivation. The PC1D simulation shows the efficiency of the solar cell without any passivation is 14.8%. This indicates the BSoD as a promising source for the p+ emitter formation in n- type c-Si solar cells.
关键词： boron rich layer,Sheet resistance,boron spin on dopant,PC1D simulation
更新于2025-09-16 10:30:52
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Isotopic Analysis and Characterization of Boric Acid Diffused Emitters in n-type c-Si Solar Cells
摘要： Boric acid (BA) is one of the boron dopant sources used in recent years to fabricate emitters for n-type c- Si solar cells. Boric acid solution with concentrations less than 4% is sufficient enough to get doping concentrations with sheet resistance values 10 ?/sq to 90 ?/sq under different diffusion conditions. Isotopic analysis of BA diffused emitter, optimized for different sheet resistances have been studied in this work. Cs ions of 1KV 300x300 raster ions have been used for the emitters and it has resulted detection of 11B and 28Si isotopes in all the boron diffused samples. Isotopic analysis of borosilicate glass (BSG) and boron rich layer (BRL), corresponding to different dopant concentrations, also shows isotope detections and they vary according to natural abundance.
关键词： isotopic analysis,boron rich layer,sheet resistance values
更新于2025-09-12 10:27:22