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- 2019
- FSO Communication System
- Subcarrier Intensity Modulation
- Atmospheric Turbulence
- Bit Error Rate
- Average Irradiance
- Optoelectronic Information Science and Engineering
- Galgotias College of Engineering and Technology
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Screening of quantum-confined Stark effect in nitride laser diodes and superluminescent diodes
摘要： In the present work we report on the observation of carrier-induced screening of built-in electric fields in (Al,In)GaN laser diodes and superluminescent diodes. We use the emission peak energy as a measure of the quantum-confined Stark effect and its screening by free carriers. For superluminescent diodes we observe a steady increase of screening up to the current density of 10 kA/cm2. This shows that the lasing in nitride laser diodes occurs under high electric fields, far from the flat band conditions.
关键词： nitride laser diodes,electric fields,carrier screening,quantum-confined Stark effect,superluminescent diodes
更新于2025-11-14 15:24:45
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Encapsulated Cadmium Sulfide in Silicon Dioxide Porous Shells for Enhanced Photocatalytic Sustainability and Commendable Protection of Organic Carriers
摘要： The purpose of this study is to provide a solution to two troublesome problems on photocorrosion of cadmium sulfide (CdS) and photocatalysis damage to organic carrier. An encapsulation system of CdS in silicon dioxide (SiO2) porous shell can be constructed by following strategies: polypyrrole (PPy) layer is deposited on the surface of CdS nanoparticles via chemical redox polymerization; then the resulting PPy@CdS is covered by metasilicic acid (H2SiO3) with polyethylene glycol by sol–gel process, which originates from hydrolysis of tetraethyl orthosilicate; after removing PPy interlayers by calcination, CdS@void@SiO2 yolk–porous-shell nanospheres (YSNs) are fabricated. As expected, YSN nanoarchitecture is verified by transmission electron microscopy (TEM) and Brunauer–Emmett–Teller (BET) analysis. The tailored void can be tuned by the sacrificed layers of PPy. CdS@void@SiO2 YSNs exhibit excellent photostability with a considerably low level of Cd2+ concentration at <30 ppm, which is dropped down 18 times less than ≈520 ppm of CdS. CdS@void@SiO2 YSNs show good dye removal efficiency up to 99.5%, and commendable hydrogen evolution of 126.8 μmol g?1 h?1. More interestingly, the transparent and porous SiO2 shell in the YSNs has an impressive shielding to organic carrier. Our versatile YSNs have great potential to translate CdS photocatalyst to industrial-scale application because of its stability and nondestructivity.
关键词： cadmium sulfide,photocorrosion,carrier protection,sustainable photocatalysis,yolk–porous-shell
更新于2025-11-14 15:18:02
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Preparation and immobilization of zinc sulfide (ZnS) nanoparticles on polyvinylidene fluoride pellets for photocatalytic degradation of methylene blue in wastewater
摘要： ZnS nanoparticles with 90 nm diameter were synthesized by low-temperature method and immobilized onto the surface of polyvinylidene fluoride (PVDF) pellets prepared by phase inversion method. Results by FTIR and X-ray photoelectron spectroscopy revealed that the ZnS nanoparticles were immobilized tightly on the PVDF surface without their release and losing photocatalytic activity. The UV-absorption spectra showed that the PVDF matrix had no adverse effect on the optical properties of ZnS nanoparticles. Due to large size (5 mm) and excellent mechanical stability, the PVDF-ZnS pellets could be easily dispersed in the photocatalytic reactor treating methylene blue solution. The removal efficiency of the methylene blue with the PVDF-ZnS pellets was higher (more than 95%) than that observed by the control PVDF pellets or ZnS nanoparticles tested. No change in the removal efficiency was observed as the PVDF-ZnS pellets were reused by performing photocatalytic tests at the same experimental conditions repeatedly.
关键词： Reusability,Polymer carrier,Zinc sulfide,Immobilization,Phase inversion,Photocatalytic degradation
更新于2025-11-14 15:14:40
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Percolation Effects in Electrolytically-Gated WS <sub/>2</sub> /Graphene Nano:Nano Composites
摘要： Mixed networks of conducting and non-conducting nanoparticles show promise in a range of applications where fast charge transport is important. While the dependence of network conductivity on the conductive mass fraction (Mf) is well understood, little is known about the Mf-dependence of mobility and carrier density. This is particularly important as the addition of graphene might lead to increases in the mobility of semiconducting nanosheet-network transistors. Here, we use electrolytic gating to investigate the transport properties of spray-coated composite networks of graphene and WS2 nanosheets. As the graphene Mf is increased, we find both conductivity and carrier density to increase in line with percolation theory with percolation thresholds (~8 vol%) and exponents (~2.5) consistent with previous reporting. Perhaps surprisingly, we find the mobility increases modestly from ~0.1 cm2/Vs (for a WS2 network) to ~0.3 cm2/Vs (for a graphene network) which we attribute to the similarity between WS2-WS2 and graphene-graphene junction resistances. In addition, we find both the transistor on- and off-currents to scale with Mf according to percolation theory, changing sharply at the percolation threshold. Through fitting, we show that only the current in the WS2 network changes significantly upon gating. As a result, the on-off ratio falls sharply at the percolation threshold from ~104 to ~2 at higher Mf. Reflecting on these results, we conclude that the addition of graphene to a semiconducting network is not a viable strategy to improve transistor performance as it reduces the on:off ratio far more than it improves the mobility.
关键词： graphene,ionic liquid,thin film transistor,WS2,carrier density,composite,mobility,Printed electronics
更新于2025-10-22 19:40:53
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Surface-to-volume ratio drives photoelelectron injection from nanoscale gold into electrolyte
摘要： Hot charge carriers from plasmonic nanomaterials currently receive increased attention due to their promising potential in important applications such as solar water splitting. While a number of important contributions were made on plasmonic charge carrier generation and their transfer into the metal’s surrounding in the last decades, the local origin of those carriers is still unclear. With our study employing a nanoscaled bicontinous network of nanoporous gold, we take a comprehensive look at both subtopics in one approach and give unprecedented insights into the physical mechanisms controlling the broadband optical absorption and the generation and injection of hot electrons into an adjacent electrolyte where they enhance electrocatalytic hydrogen evolution. This absorption behavior is very different from the well-known localized surface plasmon resonance effects observed in metallic nanoparticles. For small ligament sizes the plasmon decay in our network is strongly enhanced via surface collisions of electrons. These surface collisions are responsible for the energy transfer to the carriers, thus, the creation of hot electrons from a broad spectrum of photon energies. As we reduce the gold ligament sizes below 30 nm, we demonstrate an occurring transition from absorption that is purely exciting 5d-electrons from deep below the Fermi level to an absorption which significantly excites “free” 6sp-electrons to be emitted. We differentiate these processes via assessing the internal quantum efficiency of the gold network photoelectrode as a function of the feature size providing a size-dependent understanding of the hot electron generation and injection processes in nanoscale plasmonic systems. We demonstrate that the surface effect - compared to the volume effect – becomes dominant and leads to significantly improved efficiencies. The most important fact to recognize is that in the surface photoeffect presented here, absorption and electron transfer are both part of the same quantum mechanical event.
关键词： Hot electron,Photoemission,Water splitting,Hydrogen evolution,Carrier injection,Surface damping,Nanoporous Au
更新于2025-10-22 19:40:53
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Temporal pulsed x-ray response of CdZnTe: In detector
摘要： The temporal response of cadmium-zinc-telluride (CZT) crystals is evaluated at room temperature by using an ultrafast-pulsed x-ray source. The dynamics of carrier relaxation in a CZT single crystal is modeled at a microscopic level based on a multi-trapping effect. The effects of the irradiation flux and bias voltage on the amplitude and full width at half maximum (FWHM) of the transient currents are investigated. It is demonstrated that the temporal response process is affected by defect level occupation fraction. A fast photon current can be achieved under intense pulsed x-ray irradiation to be up to 2.78×109 photons mm?2·s?1. Meanwhile, it is found that high bias voltage could enhance carrier detrapping by suppressing the capture of structure defects and thus improve the temporal response of CZT detectors.
关键词： transient current,charge carrier,ultrafast-pulsed x-rays,CdZnTe
更新于2025-09-23 15:23:52
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Widely tunable single bandpass microwave photonic filter based on dual-fiber stimulated Brillouin scattering
摘要： A new technique to achieve a single bandpass microwave photonic filter (MPF) with wide tunability based on stimulated Brillouin scattering is proposed. The MPF cascades the Brillouin frequency shifter and amplification based on a dual-fiber structure. The experimental results present a single bandpass MPF located at 21.4 GHz with a 3-dB bandwidth of 38 MHz and an out-of-band rejection ratio over 30 dB. The proposed single bandpass MPF also successfully demonstrates a wide-band tuning over 40 GHz, which is achieved by employing a frequency shifter based on carrier suppressed single-sideband modulation scheme in the structure.
关键词： Brillouin frequency shift,stimulated Brillouin scattering,fiber,microwave photonic filter,carrier suppressed single-sideband modulation
更新于2025-09-23 15:23:52
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Comparative analysis of capacity oriented Integrated AMI modulation technique for the deployment of radio over fiber system
摘要： To improve the spectral efficiency and to reduce non-linear distortion in the optical system, various advanced modulation techniques have been investigated for radio over fiber (RoF) system. The investigation indicates the high data rate distortion less transmission for long-haul RoF system still further investigation is required to improve spectral efficiency and to get the reduction in signal degradation. In this paper, an advanced modulation technique referred as integrated alternate mark inversion modulation technique based upon external modulation (electro-absorption modulator) has been designed and simulated. The results show better performance in terms of performance metrics i.e. Q-factor (25.15) and BER (4e-140) and also enhance the data transmission capabilities up to 100 Gbps covering the long distance of 250 km resulting a reasonable reduction in signal degradation particularly chromatic dispersion effects for long-haul transmissions.
关键词： Single mode fiber—SMF,Carrier suppressed return to zero—CSRZ,Erbium doped fiber amplifier—EDFA,RoF,Dispersion compensating fiber—DCF,Multi-mode fiber—MMF
更新于2025-09-23 15:23:52
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Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption
摘要： Depth profiling of the ambipolar carrier lifetime was performed in n-type, 140μm thick silicon carbide (SiC) epilayer using excitation by two-photon absorption (TPA) with a pulsed 586nm laser, and confocal measurement of time resolved photoluminescence (TRPL) decay from the excited region. A depth resolution of ≈10μm was obtained. The PL decay curves were analyzed using a recently developed formalism that takes into account the TPA excitation, carrier diffusion and surface/interface recombination. The carrier lifetime decreases near the top surface of the epitaxial layer as well as near its interface with the substrate.
关键词： Carrier lifetime profiling,Silicon Carbide
更新于2025-09-23 15:23:52
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Effect of monatomic and molecular ion irradiation on time resolved photoluminescence decay in GaN
摘要： Optical effects induced in silicon-doped wurtzite (0001) GaN epilayers by keV monatomic and molecular ion irradiation were experimentally investigated. Results were analyzed together with data on structure defect formation. In all the cases under consideration, an increase in the collision cascade density (the cases of molecular and heavy atomic ion bombardment) enhances the stable damage accumulation rate and, accordingly, intensifies quenching of luminescence. The processes of PL suppression were theoretically considered as an increase of surface recombination rate of nonequilibrium photo-excited charge carriers due to production of stable damage at the irradiated subsurface layer. It is shown that carrier diffusion determines PL decay time shortening in the shallow implantation cases studied.
关键词： Radiation damage,Photoluminescence,Collision cascade density,Time-resolved PL,Charge carrier diffusion,Ion implantation,GaN
更新于2025-09-23 15:23:52