Development of InP Quantum Dot-based Light Emitting Diodes

摘要： High performance quantum dot light emitting diode (QLED) is being considered as the next generation technology for energy efficient solid-state lighting and displays. InP QLED is the most promising alternative of the toxic CdSe QLED. Unlike the problems of poor hole injection in CdSe-based QLED, highly delocalized electrons and parasitic emissions are serious problems in green-emitting InP QLED. The loss mechanism and device physics in InP QLED have not been sufficiently studied since the first report of InP QLED in 2011. This review summarized the recent efforts on improving the performance of InP QLED, from the perspectives of core/shell structures to optimization of carrier transport layers. It is our intention to conduct a review as well as clarify some previous misunderstandings on the device physics in InP QLED, and provide some insights for the possible solutions of the challenging problems in InP QLED.