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Light and elevated temperature induced degradation in Ba??Ga co-doped cast mono Si PERC solar cells
摘要： The utilization of boron-doped Si solar cells based on the structure of a passivated emitter and rear cell (PERC) in the solar industry has increased recently. However, this type of high efficiency solar cell is exposed to a so-called light and elevated temperature induced degradation (LeTID). A suppressing of mc-Si LeTID has been studied through a regeneration treatment at high temperature under illumination or in the dark, but most was about the lifetime samples. In this work, to evaluate the applicability of regeneration and annealing at industrial relevant conditions, industrially made B–Ga co-doped cast-mono Si PERC solar cells were treated in a light soaking tool in which the intensity of light and substrate temperature could be adjusted separately and a rapid thermal process (RTP) system. This treatment was evaluated during a subsequent intentional degradation under conditions of 75 °C with an LED white light source at an intensity of 1 kW/m2. The results showed that properly regenerated samples by high intensity illumination at elevated temperatures suffered from the least degradation, while untreated solar cells had most severe degradation. The RTP method could improve the performance of the solar cells but the RTP-treated samples were less stable than the regenerated samples. It demonstrates the application of a fast (around 20 min) regeneration method could be coupled in mass production. Further, RTP treatment combining with an accelerated regeneration step may be a potential method to provide both the improved performance and high anti-LeTID properties in Si PERC solar cells.
关键词： Passivated emitter and rear cell (PERC),Light- and elevated temperature-induced degradation (LeTID),Cast mono silicon
更新于2025-09-19 17:13:59
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Substrate integrated waveguide‐slot wide‐angle scanning aperiodic phased array with low side‐lobe levels
摘要： The concentrations of Cr, Fe, Ni, and Cu in a cast-monocrystalline silicon ingot grown for solar cell applications are reported. Wafers taken from along the ingot are coated with silicon nitride ?lms and annealed, causing mobile impurities to be gettered to the ?lms. Secondary ion mass spectrometry is applied to measure the metal content in the silicon nitride ?lms. The bulk concentrations of the gettered metals in samples along the ingot are found to be: Cr (3.3 (cid:1) 1010–3.3 (cid:1) 1011 cm(cid:3)3), Fe (3.2 (cid:1) 1011–2.5 (cid:1) 1012 cm(cid:3)3), Ni (1.5 (cid:1) 1012–1.3 (cid:1) 1013 cm(cid:3)3), and Cu (7.1 (cid:1) 1011–3.2 (cid:1) 1013 cm(cid:3)3). For each metal, the lower limit is measured on the wafer from the middle of the ingot, and the higher limit is measured on wafers from the bottom or the top. The results are compared with similar data recently measured on a high-performance multicrystalline silicon ingot. The results provide insights into the total bulk concentrations of the metals in cast-grown ingots.
关键词： gettering,transition metals,cast-mono,silicon nitride
更新于2025-09-11 14:15:04