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Spatially Uniform Shallow Trap Distribution in an Ultrathin Organic Transistor
摘要： In organic electronic materials, charge carrier transport is often limited by disorder-induced trap states very close in energy to the ideal band transport states. We directly view the location and impact of these 'shallow' traps on an ultrathin transistor active layer using Kelvin Probe Force Microscopy. As the transistor turns on, dramatic fluctuations in the surface potential of the active channel suddenly arise due to charge trapping and release processes. Importantly, the spatial distribution of rapid fluctuations in surface potential is uniform throughout the active channel. These facts strongly constrain the microscopic origin of shallow charge traps, and associated efforts to optimize the mobility and noise performance baseline in device applications.
关键词： disorder,charge traps,electrical noise,organic electronics
更新于2025-09-23 15:23:52
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Sol-Gel Processed TiO2 Nanotube Photoelectrodes for Dye-Sensitized Solar Cells with Enhanced Photovoltaic Performance
摘要： The performance of dye-sensitized solar cells (DSCs) critically depends on the efficiency of electron transport within the TiO2-dye-electrolyte interface. To improve the efficiency of the electron transfer the conventional structure of the working electrode (WE) based on TiO2 nanoparticles (NPs) was replaced with TiO2 nanotubes (NTs). Sol-gel method was used to prepare undoped and Nb-doped TiO2 NPs and TiO2 NTs. The crystallinity and morphology of the WEs were characterized using XRD, SEM and TEM techniques. XPS and PL measurements revealed a higher concentration of oxygen-related defects at the surface of NPs-based electrodes compared to that based on NTs. Replacement of the conventional NPs-based TiO2 WE with alternative led to a 15% increase in power conversion efficiency (PCE) of the DSCs. The effect is attributed to the more efficient transfer of charge carriers in the NTs-based electrodes due to lower defect concentration. The suggestion was confirmed experimentally by electrical impedance spectroscopy measurements when we observed the higher recombination resistance at the TiO2 NTs-electrolyte interface compared to that at the TiO2 NPs-electrolyte interface. Moreover, Nb-doping of the TiO2 structures yields an additional 14% PCE increase. The application of Nb-doped TiO2 NTs as photo-electrode enables the fabrication of a DSC with an efficiency of 8.1%, which is 35% higher than that of a cell using a TiO2 NPs. Finally, NTs-based DSCs have demonstrated a 65% increase in the PCE value, when light intensity was decreased from 1000 to 10 W/m2 making such kind device be promising alternative indoor PV applications when the intensity of incident light is low.
关键词： nanotubes,X-ray photoelectron spectroscopy,dye-sensitized solar cells,semiconductor-liquid interface,charge traps
更新于2025-09-19 17:13:59
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Nanoparticulate Metal Oxide Top Electrode Interface Modification Improves the Thermal Stability of Inverted Perovskite Photovoltaics
摘要： Solution processed γ-Fe2O3 nanoparticles via the solvothermal colloidal synthesis in conjunction with ligand-exchange method are used for interface modification of the top electrode in inverted perovskite solar cells. In comparison to more conventional top electrodes such as PC(70)BM/Al and PC(70)BM/AZO/Al, we show that incorporation of a γ-Fe2O3 provides an alternative solution processed top electrode (PC(70)BM/γ-Fe2O3/Al) that not only results in comparable power conversion efficiencies but also improved thermal stability of inverted perovskite photovoltaics. The origin of improved stability of inverted perovskite solar cells incorporating PC(70)BM/ γ-Fe2O3/Al under accelerated heat lifetime conditions is attributed to the acidic surface nature of γ-Fe2O3 and reduced charge trapped density within PC(70)BM/ γ-Fe2O3/Al top electrode interfaces.
关键词： nanoparticulate metal oxides,accelerated lifetime,electrodes,thermal stability,degradation mechanisms,interfaces,inverted perovskites solar cells,impedance spectroscopy,charge traps density
更新于2025-09-11 14:15:04
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Photogating and high gain in ReS <sub/>2</sub> field-effect transistors
摘要： Two-dimensional layered transition metal dichalcogenides have shown much promise due to their remarkable electro-optical properties and potential use as photodetectors. We observed photogating in our few-layered (3–4 layers) ReS2 field-effect transistors (FETs) in which varying the incident optical power shifted the FETs’ threshold voltage. The photogating effect produced a significant gain in the electrical response of the FETs to incident light as measured by the responsivity (R) and external quantum efficiency (EQE). We obtained a maximum R of 45 A/W corresponding to an EQE of ～10 500% in a four-terminal measurement of the photoconductivity in the ON-state. We attribute both the photogating and the observed gain to the influence of charge traps. An estimate of the device gain based on our observations is calculated to be 5 × 104. Published by AIP Publishing.
关键词： photodetectors,high gain,charge traps,ReS2,field-effect transistors,photogating
更新于2025-09-10 09:29:36