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Single-Layer Dual-Band Balanced Substrate- Integrated Waveguide Filtering Power Divider for 5G Millimeter-Wave Applications
摘要： A single-layer substrate-integrated waveguide (SIW) filtering power divider (FPD) with fully differential operation at 28 and 39 GHz is proposed in this letter. This FPD consists of three SIW cavities where the differential and common modes of each cavity were properly designed to form three-pole dual passbands, facilitate deployment of isolation resistors, and introduce transmission zeros while attaining high in-band common-mode rejection. To improve the output return loss and isolation in dual bands, a novel and simple approach to find the proper location of isolation resistors is presented. At operating frequencies, the measured differential-mode input or output return loss, minimum insertion loss, isolation, and common-mode suppression are >14.1 dB, <(3 + 2.2) dB, >14.9 dB, and >30.3 dB, respectively. The amplitude and phase imbalances between outputs are <0.48 dB and <4.2?, respectively.
关键词： balanced,dual-band,isolation resistor,common-mode rejection,substrate-integrated waveguide (SIW),differential,single-layer,mixed-mode,filtering power divider (FPD),5G
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - St. Petersburg, Russia (2019.10.17-2019.10.18)] 2019 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech) - A Method for Increasing the Low-Temperature Stability of Steady-State Behavior and Common-Mode Interference Resistance CJFET Dual-Input-Stages
摘要： An original input differential stage circuit (DS) on complementary junction field-effect transistors (CJFET) is proposed. Their main designated area is low-noise analog ICs for operation at low temperatures, including cryogenic ones. The special circuit design for setting steady-state behavior of the DS and its parametric optimization in the LTspice environment provide a relatively high stability of the CJFet steady-state behavior of the input transistors in a wide temperature range. It is shown that, in this case, the common- mode rejection ratio is increased.
关键词： low-temperature electronics,differential operational amplifier,LTspice environment,differential stage,common-mode rejection ratio,junction field-effect transistors
更新于2025-09-16 10:30:52