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[IEEE 2019 54th International Universities Power Engineering Conference (UPEC) - Bucharest, Romania (2019.9.3-2019.9.6)] 2019 54th International Universities Power Engineering Conference (UPEC) - Quality Check during Manufacturing of Custom Photovoltaic Modules with Back-Contact Cells
摘要： The Electroluminescence (EL) analysis and the current-voltage (I-V) curves determination of PhotoVoltaic (PV) generators are the most used diagnosis methods to check the presence of defects. In the present work, these tests are applied to Interdigitated Back Contact (IBC) PV modules with customizable shape after their manufacturing. A defect is detected in a large number of modules, suggesting an issue related to the semi-automatic manufacturing procedure. Therefore, a detailed analysis is carried out to localize the cause of the defect and a preventive action is proposed in order to reduce the occurrence frequency of the defect during manufacturing.
关键词： back contacts,electroluminescence,photovoltaic,electrical contacts,current-voltage characteristic,defects,interdigitated
更新于2025-09-11 14:15:04
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Beyond Gold: Spin‐Coated Ti <sub/>3</sub> C <sub/>2</sub> ‐Based MXene Photodetectors
摘要： 2D transition metal carbides, known as MXenes, are transparent when the samples are thin enough. They are also excellent electrical conductors with metal-like carrier concentrations. Herein, these characteristics are exploited to replace gold (Au) in GaAs photodetectors. By simply spin-coating transparent Ti3C2-based MXene electrodes from aqueous suspensions onto GaAs patterned with a photoresist and lifted off with acetone, photodetectors that outperform more standard Au electrodes are fabricated. Both the Au- and MXene-based devices show rectifying contacts with comparable Schottky barrier heights and internal electric fields. The latter, however, exhibit significantly higher responsivities and quantum efficiencies, with similar dark currents, hence showing better dynamic range and detectivity, and similar sub-nanosecond response speeds compared to the Au-based devices. The simple fabrication process is readily integratable into microelectronic, photonic-integrated circuits and silicon photonics processes, with a wide range of applications from optical sensing to light detection and ranging and telecommunications.
关键词： work-function,MXene,semiconductors,Schottky contacts,photodetectors
更新于2025-09-11 14:15:04
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Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Thin‐Film Solar Cells
摘要： Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T< 550 °C. The electrical properties of ATO are even found to improve when CZTS is annealed at T= 534 °C. At T= 580 °C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
关键词： antimony-doped tin oxides,sulfurization,thin-film solar cells,transparent back contacts,Cu2ZnSnS4
更新于2025-09-11 14:15:04
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Nondestructive Contact Resistivity Measurements on Solar Cells Using the Circular Transmission Line Method
摘要： The contact resistivity (ρc) of screen-printed contacts is a significant component of series resistance in industrial solar cells. Measuring ρc with standard techniques, such as the transmission line method (TLM), requires that the custom printed test structures be isolated from the device. In this article, we present a method for measuring ρc on solar cells using the circular TLM (cTLM), where the test structures are hidden within the busbars of the solar cell. This alleviates the need for the test structure to be isolated from the device, allowing for the fast and nondestructive measurement of ρc without causing additional shading on the cell. These measurements are performed with a semiautomatic tool, the ContactSpot-PRO, used for the accurate and systematic measurement of the ρc on the cTLM structures. Our results show that the cTLM technique compares well to the linear TLM technique on several samples fired through a range of temperatures. However, numerical models generated using Quokka3 and scanning electron microscopy images indicate that structural differences in screen-printed TLM and cTLM structures affect the actual contact resistivity of each pattern. The numerical models also show how nonuniform sheet resistance beneath and in-between the printed contacts can affect the measured ρc when using both the TLM and cTLM.
关键词： screen-printed contacts,circular transmission line method,nondestructive measurement,contact resistivity,solar cells
更新于2025-09-11 14:15:04
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Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells
摘要： We report on the development of highly reflective back contacts (RBCs) made of multilayer stacks for ultrathin CIGS solar cells. Two architectures are compared: they are made of a silver mirror coated either with a single layer of In2O3:Sn (ITO) or with a bilayer of ZnO:Al/ITO. Due to the improvement of CIGS rear reflectance, both back contacts result in a significant external quantum efficiency enhancement, in agreement with optical simulations. However, solar cells fabricated with Ag/ITO back contacts exhibit a strong shunting behavior. The key role of the ZnO:Al layer to control the morphology of the top ITO layer and to avoid silver diffusion through the back contact is highlighted. For a 500-nm-thick CIGS layer, this optimized RBC leads to a best cell with a short-circuit current of 27.8 mA/cm2 (+2.2 mA/cm2 as compared to a Mo back contact) and a 12.2%-efficiency (+2.5% absolute).
关键词： photovoltaic cells,reflective back contacts,ultrathin Cu(In,Ga)Se2,In2O3:Sn
更新于2025-09-11 14:15:04
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High-efficiency n-type silicon PERT bifacial solar cells with selective emitters and poly-Si based passivating contacts
摘要： Bifacial crystalline silicon (c-Si) solar cells have currently attracted much attention due to the front high-efficiency and additional gain of power generation from the back side. Here, we have presented n-type passivated emitter and rear totally-diffused (n-PERT) bifacial c-Si solar cells featuring front selective emitter (SE) and polysilicon (poly-Si) based passivating contacts. The SE formation was scanned with laser doping based on front boron-diffusion p+ emitter. The poly-Si based passivating contacts consisting of nano-layer SiOx of ~1.5 nm thickness grown with cost-effective nitric acid oxidation and phosphorus-doped polysilicon exhibited excellent passivation for high open-circuit voltage. We have successfully achieved the large-area (156 × 156 mm2) n-PERT bifacial solar cells yielding top efficiency of 21.15%, together with a promising short-circuit current density of 40.40 mA/cm2. Theoretical calculation has further demonstrated that the optimal thickness of SiOx nano-layer will increase from 1.5 nm to 1.8 nm if the density of interface defect state decreases by one magnitude from 1 × 1010 cm?2/eV, and the cell efficiency can be improved up to 24.64% with open-circuit voltage over 0.720 V by optimizing the parameters of functional materials and interface layers. The present work has indicated that the commercialization of low-cost and high-efficiency n-PERT bifacial c-Si cells is possible due to the processes compatible with existing production lines.
关键词： n-PERT bifacial,Nano-layer SiOx,Poly-Si based passivating contacts,c-Si solar cells,Selective emitter
更新于2025-09-11 14:15:04
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High-Temperature β-Ga$_2$O$_3$ Schottky Diodes and UVC Photodetectors using RuOx Contacts
摘要： High-temperature β-Ga2O3 Schottky diodes with very low leakage currents, capable of sensitive UVC detection at 350 oC, were fabricated on 201 β-Ga2O3 single crystal substrates using intentionally-oxidized ruthenium (RuOx) Schottky contacts (SCs), with x = ~2.1. These RuOx:β-Ga2O3 SCs were characterized by rectification ratios of more than 1010 at ± 3 V and very low reverse leakage current densities of less than 1 nAcm-2 (~1 pA) at ?3.0 V, that were unchanged from 24 to 350 oC. These very low high-temperature leakage currents were due to their extremely high Schottky barriers of 2.2 eV at 350 oC, that were stable against repeated operation at this temperature. Although not optimized for photodetection, these SCs could detect UVC (λ = 248 nm) radiation at a temperature of 350 oC with a UVC/dark current ratio of ~103. The very high and thermally stable rectifying barriers of these RuOx:β-Ga2O3 SCs makes them strong candidates for use in high temperature β-Ga2O3 rectifying diodes and UVC photodetectors.
关键词： High Temperature Devices,Schottky Contacts,RuO2,Ga2O3,Ruthenium Dioxide,UV Photodetectors
更新于2025-09-11 14:15:04
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The role of NaF post-deposition treatment on the photovoltaic characteristics of semitransparent ultrathin Cu(In,Ga)Se <sub/>2</sub> solar cells prepared on indium-tin-oxide back contacts: a comparative study
摘要： Cu(In,Ga)Se2 (CIGSe) solar cells with absorber thicknesses of <500 nm are important for lowering the cost of photovoltaic (PV)-generated electricity. Moreover, ultrathin bifacial CIGSe solar cells can be prepared on indium-tin-oxide (ITO) back contacts (BCs). In contrast to Mo BCs, ITO BCs suppress the di?usion of Na from soda-lime glass (SLG) to the CIGSe absorber. Na present in the absorber is supposed to ameliorate the PV properties of CIGSe solar cells, but in the absence of Na or when the Na concentration is extremely low, the PV performance is expected to be poor. In this study, a NaF post-deposition treatment (PDT) was applied to a <500 nm thick semitrasparent CIGS absorber prepared by a 1-stage co-evaporation process. A detailed comparison is made between the CIGSe solar cell that underwent the NaF PDT (C–Na) and a reference CIGSe solar cell in which no Na was supplied from an external source (C0). All the PV parameters (i.e., the open-circuit voltage, short-circuit current density, ?ll factor, and e?ciency) of C–Na considerably improved compared with those of C0. To understand the factors that led to this improvement, the solar cells are analyzed by various characterization techniques, including JV measurements, external quantum e?ciency measurements, temperature-dependent measurements of the open-circuit voltage, capacitance–voltage measurements, drive level capacitance pro?lometry, and admittance spectroscopy. Furthermore, the reaction occurring at the CIGSe/ITO interface is investigated with transmission electron microscopy, and the implications of this reaction on the device performance are discussed.
关键词： ultrathin,solar cells,semitransparent,indium-tin-oxide back contacts,NaF post-deposition treatment,Cu(In,Ga)Se2,photovoltaic characteristics
更新于2025-09-11 14:15:04
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Gaussian distribution in current-conduction mechanism of (Ni/Pt) Schottky contacts on wide bandgap AlInGaN quaternary alloy
摘要： The current-conduction mechanisms of the as-deposited and annealed at 450 °C (Ni/Pt) Schottky contacts on AlInGaN quaternary alloy have been investigated in the temperature range of 80–320 K. The zero-bias barrier height (BH) (ΦB0) and ideality factor (n) of them were evaluated using thermionic emission (TE) theory. The ΦB0 and n values calculated from the I-V characteristics show a strong temperature dependence. Such behavior of ΦB0 and n is attributed to Schottky barrier inhomogeneities. Therefore, both the ΦB0 vs n and ΦB0 vs q/2kT plots were drawn to obtain evidence on the Gaussian distribution (GD) of the barrier height at the metal/semiconductor interface. These plots show two different linear parts at low and intermediate temperatures for as-deposited and annealed Schottky contacts. Thus, the mean value of ΦB0 and standard deviation (σ0) was calculated from the linear parts of the ΦB0 vs q/kT plots for both samples. The values of the effective Richardson constant (A*) and mean BH were obtained from the modified Richardson plots which included the effect of barrier inhomogeneity. These values of Richardson constant and barrier height for as-deposited contacts were found to be 19.9 A cm?2 K?2 and 0.59 eV, respectively, at low temperature, but 43.3 A cm?2 K?2 and 1.32 eV, respectively, at intermediate temperatures. These values of Richardson constant and barrier height for annealed contacts were found to be 19.6 A cm?2 K?2 and 0.37 eV, respectively, at low temperature, but 42.9 A cm?2 K?2 and 1.54 eV, respectively, at intermediate temperatures. It is clear that the value of the Richardson constant obtained for as-deposited and annealed samples by using double-GD for intermediate temperatures is close to the theoretical value of AlInGaN (=44.7 A cm?2 K?2). Therefore, I-V-T characteristics for the as-deposited and annealed Schottky contacts in the temperature range of 80–320 K can be successfully explained based on TE theory with double-GD of the BHs.
关键词： AlInGaN,barrier height,Schottky contacts,Gaussian distribution,thermionic emission
更新于2025-09-11 14:15:04
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Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme
摘要： In this paper, an electrode-pair model is proposed and demonstrated for the first time to accurately extract the electrical resistance parameters of the planar metal-semiconductor ohmic contacts. Different from the conventional transmission line model, the proposed model layout features a series of separated electrode pairs with the same electrode distance but various widths. Meanwhile, an equivalent circuit for contact resistance composition is set up to clearly specify the contribution of each resistance component to the overall contact performance. The semiconductor sheet resistances underneath the contact and outside the contact area are treated as completely independent variables. The proposed scheme is modeled theoretically and analyzed by the TCAD simulations, and the validity of the model is verified by the experimental data. Finally, the variance of the sheet resistance underneath the contact after annealing treatment can be distinguished by the model and hence more actual and precise specific contact resistance is achieved. This work provides a distinct perspective to understand and quantify the electrical characteristics of the semiconductor ohmic contacts, and it can also assist engineers for a better electrode layout design.
关键词： Ohmic contacts,Gallium Nitride,Semiconductor devices,Modeling process
更新于2025-09-10 09:29:36