Ultrafast Electron Cooling and Decay in Monolayer WS <sub/>2</sub> Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy

摘要： A comprehensive understanding of the ultrafast electron dynamics in two-dimensional transition metal dichalcogenides (TMDs) is necessary for their applications in optoelectronic devices. In this work, we contribute a study of ultrafast electron cooling and decay dynamics in the supported and suspended monolayer WS2 by time- and energy-resolved photoemission electron microscopy (PEEM). Electron cooling in the Q valley of the conduction band is clearly resolved in energy and time, on a timescale of 0.3 ps. Electron decay is mainly via defect trapping process on a timescale of several picoseconds. We observed that the trap states can be produced and increased by laser illumination under ultra-high vacuum, and the higher local optical-field intensity led to the faster increase of trap states. The enhanced defect trapping could significantly modify the carrier dynamics and should be paid attention to in photoemission experiments for two-dimensional materials.