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Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films
摘要： The outstanding thermal properties, mechanical properties and large optical bandgap of hexagonal boron nitride (h-BN) make it very attractive for various applications in ultrathin 2D microelectronics. However, the synthesis of large lateral size and uniform h-BN thin films with a high breakdown strength still remains a great challenge. Here, we comprehensively investigated the effect of growth conditions on the thickness of h-BN films via low pressure chemical vapor deposition (LPCVD). By optimizing the LPCVD growth parameters with electropolished Cu foils as the deposition substrates and developing customized "enclosure" quartz-boat reactors, we achieved thickness-tunable (1.50–10.30 nm) growth of h-BN thin films with a smooth surface (RMS roughness is 0.26 nm) and an ultra-large area (1.0 cm × 1.0 cm), meanwhile, the as-grown h-BN films exhibited an ultra-high breakdown strength of ~10.0 MV cm?1, which is highly promising for the development of electrically reliable 2D microelectronic devices with an ultrathin feature.
关键词： dielectric breakdown strength,h-BN,thin films,LPCVD,2D microelectronics,hexagonal boron nitride
更新于2025-09-19 17:15:36
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Improvement of dielectric breakdown strength and energy storage performance in Er2O3–modified 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3 lead-free ceramics
摘要： In this study, 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3-x wt. % Er2O3 ceramics (SBNCTEx; x = 0-5) were synthesized using traditional solid-state method, and we investigated the microstructure, energy storage properties as well as the relationship between dielectric breakdown strength and interfacial polarization. As compared with pure 0.95Sr0.7Ba0.3Nb2O6-0.05CaTiO3 ceramics, the Er2O3 dopants suppressed the grain growth of SBNCTEx, and the doped ones showed the dense microstructure. The secondary phase was found for x ≥ 1 according to the EDS results, and the influence of the secondary phase on relative dielectric breakdown strength has also been studied. The dielectric breakdown strength increased from 18.1kV/mm to 34.4 kV/mm, which is good for energy storage. The energy storage density of 0.28J/cm3 and the energy storage efficiency of 91.4% were obtained in the SBNCTE5 ceramics. The results indicate that SBNCTE ceramics can be used as energy storage capacitors.
关键词： Impedance,Er2O3 addition,Dielectric breakdown strength,Energy storage
更新于2025-09-09 09:28:46