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oe1(光电查) - 科学论文

621 条数据
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  • High Power 1.5 μm Broad Area Laser Diodes Wavelength Stabilized by Surface Gratings

    摘要： Wavelength stabilization against temperature variation of high-power broad area 1.5-μm InGaAsP/InP laser diodes is demonstrated by employing surface gratings. The development targets application in eye-safe automotive LIDAR systems, which would bene?t from deploying narrowband receiver ?lters to block ambient solar radiation for improved signal-to-noise ratio. The surface grating is monolithically integrated on the laser chip using nanoimprint lithography. The peak power of the lasers exceeded 6 W in pulsed mode, for an FWHM spectral width of 0.3 nm and a peak wavelength drift of only 0.1 nm/°C. The wavelength shift with temperature is reduced by ?ve times compared to broad area high-power Fabry–Perot laser diodes typically employed in LIDAR systems.

    关键词： high power,distributed Bragg re?ector,LIDAR,Diode lasers

    更新于2025-11-28 14:24:03

  • Pulse-diode-intermittent-pumped 2-μm acousto-optically Q-switched Tm:YAG laser

    摘要： An innovative pulse-diode-intermittent-pumped 2-micron acousto-optically Q-switched Tm:YAG laser is presented for the first time, which can improve the output energy, while ensuring the operation repetition of laser. Maximum output energy of 6.83 mJ and minimum pulse width of 367.7 ns at Q-switched repetition rate of 200 Hz is obtained at pump energy of 86.2 mJ. The output wavelength is 2014.9 nm. The beam quality factor Mx2 is 1.59. The stability is larger than 98%.

    关键词： Q-switch,Diode-pumped lasers,Tm:YAG

    更新于2025-11-28 14:24:03

  • [IEEE 2018 IEEE International Semiconductor Laser Conference (ISLC) - Santa Fe, NM (2018.9.16-2018.9.19)] 2018 IEEE International Semiconductor Laser Conference (ISLC) - High Power GaN-Based Blue Superluminescent Diode Exceeding 450 mW

    摘要： We demonstrate a high-power blue emitting superluminescent diode (SLD) with a tilted-facet configuration. An optical power of 457 mW with a broad spectral bandwidth of 6.5 nm was obtained under pulsed current injection of 1A, leading to a large power-bandwidth product of ~2970 mW·nm.

    关键词： gallium nitride,amplified spontaneous emission (ASE),superluminescent diode (SLD),laser diode

    更新于2025-11-28 14:23:57

  • Direct oscillation at 640-nm in single longitudinal mode with a diode-pumped Pr:YLF solid-state laser

    摘要： A diode-pumped solid-state laser directly emitting continuous-wave (cw), single-longitudinal mode (SLM) output at 640-nm with a c-cut praseodymium-doped yttrium lithium fluoride (Pr:YLF) crystal was demonstrated for the first time, to the best of our knowledge. Combining two quarter-wave plates (QWPs) and one Brewster plate to form a twisted-mode cavity, this SLM solid-state laser achieved a maximum cw output power of 403 mW with a threshold of 600 mW and a slope efficiency of 26.8%. The emission spectrum had a linewidth of 150 MHz. The single-mode beam quality (M2) was 1.10 and 1.07 along the x and y direction, respectively.

    关键词： Single-longitudinal-mode,Diode-pumped solid-state lasers,Visible lasers

    更新于2025-11-28 14:23:57

  • Tungsten disulfide saturable absorber for passively Q-Switched YVO4/Nd:YVO4/YVO4 laser at 1342.2 nm

    摘要： By using both tungsten disul?de saturable absorber (WS2-SA) and YVO4/Nd:YVO4(0.3 at.%)/YVO4 crystal, a passively Q-switched laser centered at 1342.2 nm is ?rst reported. Stable Q-switched pulses can be obtained. At the pump power of 12 W, a shortest pulse width of 550 ns and a pulse repetition rate of 97 kHz can be observed by a digital oscilloscope, corresponding to maximum pulse energy of 5.55 μJ and pulse peak power of 10.1 W. The results promote the promising applications of WS2-SA in all-solid-state laser at 1.3 μm.

    关键词： WS2 saturable absorber,Diode-pumped lasers,Q-switched lasers,1342.2 nm laser

    更新于2025-11-28 14:23:57

  • Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating

    摘要： We demonstrate narrow-line green laser emission at 513.85 nm with a linewidth of 31 pm and side-mode suppression ratio of 36.9 dB, operating under continuous-wave injection at room temperature. A high-order (40th) distributed-feedback surface grating fabricated on multimode InGaN-based green laser diodes via a focused ion beam produces resolution-limited, single-mode lasing with an optical power of 14 mW, lasing threshold of 7.27 kA cm?2, and maximum slope efficiency of 0.32 W A?1. Our realization of narrow-line green laser diodes opens a pathway toward efficient optical communications, sensing, and atomic clocks.

    关键词： InGaN/GaN,green laser diode,distributed-feedback,narrow-line,surface grating

    更新于2025-11-28 14:23:57

  • Dual-wavelength passively mode-locked Yb-doped fiber laser based on a $\text{SnSe}_2$-PVA saturable absorber

    摘要： In this paper, tin diselenide (SnSe2) was successfully prepared with liquid phase exfoliation method and embedded into polyvinyl alcohol (PVA) as a saturable absorber (SA) in a dual-wavelength passively mode-locked Yb-doped fiber laser. Stable mode-locked pulses with a maximum average output power of 2.55 mW and a slope efficiency of 1.3% at the fundamental repetition rate of 333 kHz were achieved. By properly adjusting polarization state, four kinds of dual-wavelength fundamental frequency mode-locked pulses with peak wavelength intervals of 0.4, 1.0, 1.5 and 1.9 nm were obtained, and corresponding waveforms with different single pulse shapes were investigated in our work. A maximum signal to noise ratio (SNR) of 71.04 dB indicates that SnSe2 is promising to serve as SA in passively mode-locked fiber lasers.

    关键词： Fiber lasers,Mode-locked lasers,Diode-pumped lasers

    更新于2025-11-28 14:23:57

  • High-Power Continuous-Wave and Acousto-Optical Q-Switched Ho:(Sc <sub/>0.5</sub> Y <sub/>0.5</sub> ) <sub/>2</sub> SiO <sub/>5</sub> Laser Pumped by Laser Diode

    摘要： We experimentally investigate the continuous-wave (cw) and acousto-optical (AO) Q-switched performance of a diode-pumped Ho:(Sc0.5Y0.5)2SiO5 (Ho:SYSO) laser. A fiber-coupled laser diode at 1.91 ??m is employed as the pump source. The cw Ho:SYSO laser produces 13.0 W output power at 2097.9 nm and 56.0% slope efficiency with respect to the absorbed pump power. In the AO Q-switched regime, at a pulse repetition frequency of 5 kHz, the Ho:SYSO laser yields 2.1 mJ pulse energy and 21 ns pulse width, resulting in a calculated peak power of 100 kW. In addition, at the maximum output level, the beam quality factor of the Q-switched Ho:SYSO laser is measured to be about 1.6.

    关键词： Laser Diode Pumped,Continuous-Wave,Acousto-Optical Q-Switched,High-Power,Ho:(Sc0.5Y0.5)2SiO5 Laser

    更新于2025-11-28 14:23:57

  • [IEEE 2018 International Applied Computational Electromagnetics Society Symposium - China (ACES) - Beijing, China (2018.7.29-2018.8.1)] 2018 International Applied Computational Electromagnetics Society Symposium - China (ACES) - Dual-polarization ultra-thin tunable AMC surface for P/L bands applications

    摘要： A dual-wavelength laser diode (DWLD) with a novel structure for optoelectronic applications is presented. The device operates at 1550 nm and 1310 nm wavelengths, achieving high output power and stable performance. Experimental results demonstrate its potential for use in optical communication systems.

    关键词： 1310 nm,optical communication,1550 nm,dual-wavelength laser diode,optoelectronics

    更新于2025-11-28 14:23:57

  • Practical methodology for <i>in situ</i> measurement of micro flow rates using laser diode absorption sensors

    摘要： A laser diode-based flowmeter based on the infrared absorption method that can measure in situ micro flow rates from 0.2 to 20 ml h?1 was developed. A 1450 nm laser absorbed in water was irradiated to form a heated spot at 0 mm, and the temperature was measured upstream and downstream of the heated spot. The flow rate was measured by the temperature difference obtained by two diode lasers and photodetectors upstream and downstream of the heated spot. We measured the temperature profile of the flow rate by changing the temperature measurement position and the heating laser energy upstream and downstream of the heated spot, and compared the measurements with the simulation results. As the flow rate increased, the temperature profile shifted downstream, and the measured temperature upstream and downstream were analyzed according to the flow rate. The flow measurement range was adjusted according to the temperature measurement position. Increasing the energy of the heating laser also improved the measurement accuracy in the lower flow range. The developed flowmeter was calibrated by the gravimetric method, and the deviation and measurement uncertainty according to the flow rate were obtained. The maximum measurement uncertainty was 6.8% at a 1 ml h?1 flow rate, and the minimum measurement uncertainty was 1.78% at 8 ml h?1. Thus, it was confirmed that the flow rate can be measured through the temperature difference gauged using a simple diode laser set. Using the laser diode-based flowmeter developed in this study, one can measure the flow rate in situ without injecting contaminants, such as particles, for measurements without cutting the piping. In addition, it can be manufactured in a miniaturized form at a low cost, and thus, it can be used for multi-drug infusion analysis, semiconductor process monitoring, etc.

    关键词： near infrared absorption,diode laser,micro flow rate,thermal mass flowmeter

    更新于2025-11-25 10:30:42