<i>Ab Initio</i> Spin-Strain Coupling Parameters of Divacancy Qubits in Silicon Carbide

摘要： Cubic silicon carbide is an excellent platform for integration of defect qubits into established wafer-scale device architectures for quantum information and sensing applications, where a divacancy qubit, which is similar to the negatively charged nitrogen-vacancy (NV) center in diamond, has favorable coherence properties. We demonstrate by means of density-functional-theory calculations that for most types of distortion the 3C divacancy exhibits slightly smaller spin-strain coupling parameters but greater spin-stress coupling parameters in comparison with the diamond NV. We predict that high-quality 3C-SiC thin films hosting divacancy qubits are prospective platforms for quantum-enhanced pressure-sensor devices.