Enhanced Interfacial Dzyaloshinskii?Moriya Interaction in annealed Pt/Co/MgO structures

摘要： The interfacial Dzyaloshinskii?Moriya interaction (iDMI) is attracting great interests for spintronics. An enhancement of iDMI with an atomically thin insertion of Ta and Mg is comprehensively understood with the help of ab-initio calculations. Thermal annealing has been used to crystallize the MgO thin layer for improving tunneling magneto-resistance (TMR), but interestingly it also provides a further increase of the iDMI constant. An increase of the iDMI constant up to 3.3 mJ m2? is shown, which could be promising for the scaling down of skyrmion electronics.