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Low Work Function Ytterbium Silicide Contact for Doping-Free Silicon Solar Cells
摘要： Metal silicide is a well-known material for contact layers, however, it has not been tested in the context of doping-free carrier selective contacts. Thin film deposition of an appropriate metal with mild annealing treatment is an interesting alternative to the more complex depositions of other compound materials. Reaction of Yb deposited on top an i-a-Si:H passivation layer results in the formation of YbSix on top of a remnant i-a-Si:H following a low-temperature anneal below 200 °C. Such a contact is an interesting candidate as a doping-free electron-selective contact. Detailed investigation of the i-a-Si/YbSix contact shows that Yb thickness, i-a-Si:H thickness and silicidation annealing conditions play a significant role in determining the recombination current density (J0,metal) and the contact resistivity (ρc). Low J0,metal of 5 fA/cm2 and low ρc below 0.1 ?.cm were independently demonstrated for such i-a-Si:H/YbSix contacts. We also demonstrate that low-temperature silicidation can be combined with contact sintering (160 °C/25 min) or module lamination (160 °C/20 min), which are potential pathways for process simplification. Combining the optimised i-a-Si:H/YbSix electron contact with MoOx based hole contact in the MolYSili doping-free cell (i-a-Si:H/MoOx+ i-a-Si:H/YbSix), we achieved 16.7 % in average efficiency and 17.0 % for the champion cell. Furthermore, the YbSix contact stability was evaluated at module level and excellent thermal stability of the MolYSili laminate was demonstrated using the damp-heat test method (humidity 85 %, 85 °C, 1000 h), where the laminated MolYSili cell did not show any degradation in the cell efficiency. This is the first proof-of-concept demonstration of a stable silicide-based contact for low-temperature processed doping-free solar cells.
关键词： Yb silicide,electron-selective contact,passivating contact,doping-free cells,pinning
更新于2025-09-23 15:19:57
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High-performance white organic light-emitting diodes with doping-free device architecture based on the exciton adjusting interfacial exciplex
摘要： White organic light-emitting diodes (WOLEDs) with doping-free device architecture have aroused more attention due to their attractive merits such as simplified fabrication procedures and reduced costs. However, the electroluminescence performance of that is still manifestly unsatisfactory and needs to be further improved. Here, high-performance doping-free two-color and three-color WOLEDs with the accurate manipulation of excitons have been successfully fabricated by optimizing the interfacial exciplex. As a result, two-color WOLEDs exhibit the controllable electroluminescence spectra with a wide correlated color temperature (CCT) spanning from 2878 to 9895 K at the voltage of 4 V, as well as the maximum forward-viewing power and current efficiencies of 83.2 lm W?1 and 63.3 cd A?1, respectively. The three-color WOLED not only realizes the maximum efficiencies of 50.1 lm W?1 and 44.7 cd A?1, but also exhibits superior color stability with a color rendering index of 86, a CCT of 2679 K, and a Commission International de I’Eclairage coordinates of (0.49, 0.46) at the voltage of 5 V. Such surprising efficiencies obtained in our WOLEDs indicate that the reasonable application of interfacial exciplex should be a helpful way to develop high-performance and low cost WOLEDs with a simple technology.
关键词： high-performance,color stability,White organic light-emitting diodes,doping-free,interfacial exciplex
更新于2025-09-23 15:19:57
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Thermal stability improvement of metal oxide-based contacts for silicon heterojunction solar cells
摘要： Metal oxides are interesting materials for use as carrier-selective contacts for the fabrication of doping-free silicon solar cells. In particular, MoOx and TiOx have been successfully used as hole and electron selective contacts in silicon solar cells, respectively. However, it is of paramount importance that good thermal stability is achieved in such contacts. In our work, we combined i-a-Si:H/MoOx based hole contacts with electron contacts featuring i-a-Si:H/TiOx/low work function metal (ATOM) to fabricate doping-free cells, termed MolyATOM cells. We found that the thermal stability of the ATOM contact was improved when the i-a-Si:H was annealed (300°C for 20 min in N2) before depositing TiOx (i.e. pre-TiOx annealing), which reduces the hydrogen content in i-a-Si:H by about 27 %rel, and thereby the H-related degradation of the ATOM contact characteristics. Moreover, it was found that reducing the thickness of the low-work function metal on top of the TiOx enhanced the thermal stability of the ATOM contact. With these adaptations, the MolyATOM cell efficiency was improved by 3.5 %abs, with the highest efficiency of 17.6%. Moreover, the cells show improved thermal stability after the above-mentioned pre-TiOx annealing, which is confirmed by annealing tests at cell level as well as damp-heat tests at module level. The insights of this study could be used to tailor other metal-oxide based electron or hole contacts.
关键词： Doping-free cells,Passivating contact,MoOx,Thermal stability,TiOx,Annealing
更新于2025-09-11 14:15:04