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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Instabilities by Parasitic Substrate-Loop of GaN-on-Si HEMTs in Half-Bridges
摘要： The stability of GaN-on-Si HEMTs with substrate-to-source termination is analyzed in a high-voltage half-bridge. The work exposes that external substrate termination creates a parasitic substrate loop, which leads to unstable switching behavior under certain conditions. Stability analysis reveals that parasitic inductance in the substrate-loop alone is sufficient for instabilities, even with zero parasitic inductance in the gate- and power-loops. A systematic analytical stability analysis is carried out based on a small-signal equivalent circuit. The theory is verified by measurements using a PCB-embedded 600 V GaN HEMT with integrated gate driver. Adequate damping of the substrate loop resonance enables stable operation of the half-bridge module.
关键词： Semiconductor Device Packaging,Gallium Nitride,Switching Circuits,Circuit Stability,Substrate Potential,Bridge Circuits
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Design Considerations for a Gallium Nitride Based Phase Shifted Full Bridge DC-DC Converter for Space Applications
摘要： The main design considerations for the practical implementation of a Phase Shifted Full Bridge DC-DC converter with synchronous rectification using recently released radiation hardened Gallium Nitride (GaN) Field Effect Transistors (FETs) for space applications are presented in this paper. A brief survey comparing the benefits of GaN FETs for space power applications against current Silicon power transistor technology is conducted. Also, the main drivers for topology selection, and design considerations to implement the selected topology for space applications resulting from the limited radiation hardened components available today are described in detail. In addition, power loss breakdown from analysis and final design choices are presented. A converter was designed to validate design based on the considerations outlined. The implemented converter operates from a 100 V DC bus and delivers 400 W from a fixed 20 V output at more than 95% efficiency.
关键词： rad-hard,converter,space,radiation hardened,full bridge,phase shifted,DC-DC,GaN
更新于2025-09-04 15:30:14