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oe1(光电查) - 科学论文

2 条数据
?? 中文（中国） ▾

  • Thermally-stable large strain in Bi(Mn0.5Ti0.5)O3 modified 0.8Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3 ceramics

    摘要： A N U S C RIP T (1-x)[0.8Bi0.5Na0.5TiO3-0.2Bi0.5K0.5TiO3]-xBi(Mn0.5Ti0.5)O3 (x = 0 ~ 0.06, BNKMT100x) lead-free ferroelectric ceramics were prepared via solid state reaction method. Bi(Mn0.5Ti0.5)O3 induces a structure transition from rhombohedral-tetragonal morphotropic phases to pseudo-cubic phase. Moreover, the wide range of compositions within x = 0.03 ~ 0.055 exhibit large strain of 0.31% ~ 0.41% and electrostrictive coefficient of 0.027 ~ 0.041 m4/C2. Especially, at x = 0.04, the large strain and electrostrictive coefficient are nearly temperature-independent in the range of 25 ~ 100 °C. The impedance analysis shows the large strain and electrostrictive coefficient originate from polar nanoregions response due to the addition of Bi(Mn0.5Ti0.5)O3.

    关键词： large strain,thermal stability,composition-insensitivity,lead-free,electric property

    更新于2025-09-23 15:23:52

  • Structure and Electron Mobility of ScN Films Grown on α-Al2O3(1 1 ˉ 02) Substrates

    摘要： Scandium nitride (ScN) films were grown on α-Al2O3(1102) substrates using the molecular beam epitaxy method, and the heteroepitaxial growth of ScN on α-Al2O3(1102) and their electric properties were studied. Epitaxial ScN films with an orientation relationship (100)ScN || (1102)α-Al2O3 and [001]ScN || [1120]α-Al2O3 were grown on α-Al2O3(1102) substrates. Their crystalline orientation anisotropy was found to be small. In addition, [100] of the ScN films were tilted along [1101] of α-Al2O3(1102) in the initial stage of growth. The tilt angle between the film growth direction and [100] of ScN was 1.4–2.0? and increased with growth temperature. The crystallinity of the ScN films also improved with the increasing growth temperature. The film with the highest Hall mobility was obtained at the boundary growth conditions determined by the relationship between the crystallinity and the nonstoichiometric composition because the film with the highest crystallinity was obtained under the Sc-rich growth condition. The decreased Hall mobility with a simultaneous improvement in film crystallinity was caused by the increased carrier scattering by the ionized donors originating from the nonstoichiometric composition.

    关键词： heterostructure,electric property,scandium nitride,thin film

    更新于2025-09-19 17:15:36