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Electric-field control of spin accumulation direction for spin-orbit torques
摘要： Electric field is an energy-efficient tool that can be leveraged to control spin–orbit torques (SOTs). Although the amount of current-induced spin accumulation in a heavy metal (HM)/ferromagnet (FM) heterostructure can be regulated to a certain degree using an electric field in various materials, the control of its direction has remained elusive so far. Here, we report that both the direction and amount of current-induced spin accumulation at the HM/FM interface can be dynamically controlled using an electric field in an oxide capped SOT device. The applied electric field transports oxygen ions and modulates the HM/FM interfacial chemistry resulting in an interplay between the spin Hall and the interfacial torques which in turn facilitates a non-volatile and reversible control over the direction and magnitude of SOTs. Our electric-field controlled spin-orbitronics device can be programmed to behave either like the SOT systems with a positive spin Hall angle or a negative spin Hall angle.
关键词： spin-orbit torques,heavy metal/ferromagnet heterostructure,spin accumulation,non-volatile control,electric field control
更新于2025-09-23 15:22:29
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Resistive switching and electric field control of ferromagnetism in SnO2 films deposited at room temperature
摘要： The SnO2 film deposited at room temperature (RT) on the substrate of Pt/Ti/SiO2/Si is nano-crystallized, which exhibits room temperature ferromagnetism (FM) due to the oxygen vacancies of SnO2 film. The bipolar and multilevel resistive switching (RS) can be observed in the Ta/SnO2/Pt devices, where SnO2 film was deposited at RT. The Ta/SnO2/Pt device has a large ON/OFF ratio (27000) and multilevel RS, which is of great significance for high-density data storage applications. The saturation magnetization of Ta/SnO2/Pt/Ti/SiO2/Si (Ta/SnO2/Pt device) is almost the same as SnO2/Pt/Ti/SiO2/Si, which implies that the influence of Ta top electrodes on the saturation magnetization of Ta/SnO2/Pt/Ti/SiO2/Si is much less. The Ta/SnO2/Pt device shows the non-volatile and reversible saturation magnetization modulation between low resistance state (LRS) and high resistance state (HRS), which results from the formation/rupture of oxygen vacancy filaments. The saturation magnetization at LRS is higher than that at HRS. In addition, the saturation magnetization also enhances with an increase the magnitude of positive DC sweeping voltage. Without DC loop current, the saturation magnetization of Ta/SnO2/Pt increases with an application of positive electric field and drops again with an application of certain negative electric field. The saturation magnetization of Ta/SnO2/Pt can be reversibly modulated in non-volatile by only electric voltage without DC loop current. Such modulation of Ms by only electric voltage without loop DC current is connected with the change in Vo+ density in a certain range of SnO2 films.
关键词： oxygen vacancies,electric field control,room temperature ferromagnetism,resistive switching,SnO2 film
更新于2025-09-23 15:21:01
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Rydberg-State-Resolved Resonant Energy Transfer in Cold Electric-Field-Controlled Intrabeam Collisions of NH <sub/>3</sub> with Rydberg He Atoms
摘要： The resonant transfer of energy from the inversion sublevels in NH3 to He atoms in triplet Rydberg states with principal quantum number n = 38 has been controlled using electric fields below 15 V/cm in intrabeam collisions at translational temperatures of ～1 K. The experiments were performed in pulsed supersonic beams of NH3 seeded in He at a ratio of 1:19. The He atoms were prepared in the metastable 1s2s 3S1 level in a pulsed electric discharge in the trailing part of the beams. The velocity slip between the heavy NH3 and the lighter metastable He was exploited to perform collision studies at center-of-mass collision speeds of ～70 m/s. Resonant energy transfer in the atom?molecule collisions was identified by Rydberg-state-selective electric-field ionization. The experimental data have been compared to a theoretical model of the resonant dipole?dipole interactions between the collision partners based on the impact parameter method.
关键词： NH3,resonant energy transfer,cold collisions,electric-field control,Rydberg states,He
更新于2025-09-12 10:27:22
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Electric-Field-Controllable Conductance Switching of an Overcrowded Ethylene Self-Assembled Monolayer
摘要： Molecular isomerism has been discussed from the viewpoint of tiniest switch and memory elements in electronics. Here, we report an overcrowded ethylene-based molecular conductance switch, which fulfills all the essential requirements for implementation onto electronic devices, namely, electric-field-controllable reversible conductance change with a molecular-level spatial resolution, robust conformational bistability under ambient conditions, and ordered monolayer formation on electrode surfaces. The conformational state of this overcrowded ethylene, represented by a folded or twisted conformer, is susceptible to external environments. Nanoscopic measurements using scanning tunneling microscopy techniques, together with theoretical simulations, revealed the electronic properties of each conformer adsorbed on Au(111). While the twisted conformer prevails in the molecularly dispersed state, upon self-assembly into a monolayer, a two-dimensional network structure of the folded conformer is preferentially formed due to particular intermolecular interaction. In the monolayer state, folded-to-twisted and its reverse isomerization can be controlled by the modulation of electric fields.
关键词： overcrowded ethylene,molecular conductance switch,scanning tunneling microscopy,electric-field control,self-assembled monolayer
更新于2025-09-11 14:15:04
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Controllable magnetization and resistivity jumps of manganite thin films on BaTiO <sub/>3</sub> substrate
摘要： Manganites thin films grown on ferroelectric BaTiO3 (BTO) exhibit dramatic jumps for both magnetization and resistivity upon cooling in accordance with the temperature-dependent structural transitions of the BTO substrate. Both upward and downward jumps have been reported at the same temperature point where BTO undergoes a structural transition from monoclinic to rhombohedral. Using La5/8Ca3/8MnO3/BaTiO3 as protype system, we solve the puzzle by showing that the direction of the jumps can be controlled by applying an electric field during post growth cooling which determines the orientation of the c-axis of the BTO substrate at room temperature. This offers a convenient way to control the magnetic and transport behavior of manganites films using electric field.
关键词： manganite thin films,resistivity jumps,electric field control,magnetization,BaTiO3 substrate
更新于2025-09-09 09:28:46