Spatially Uniform Shallow Trap Distribution in an Ultrathin Organic Transistor

摘要： In organic electronic materials, charge carrier transport is often limited by disorder-induced trap states very close in energy to the ideal band transport states. We directly view the location and impact of these 'shallow' traps on an ultrathin transistor active layer using Kelvin Probe Force Microscopy. As the transistor turns on, dramatic fluctuations in the surface potential of the active channel suddenly arise due to charge trapping and release processes. Importantly, the spatial distribution of rapid fluctuations in surface potential is uniform throughout the active channel. These facts strongly constrain the microscopic origin of shallow charge traps, and associated efforts to optimize the mobility and noise performance baseline in device applications.