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Numerical and experimental analysis of the effect of metal tie layers on improving electrical properties of gold coated poly (dimethylsiloxane) flexible multi-layered films during folding
摘要： To improve folding electrical properties of flexible electronics, this study presents a new adhesive stress analysis of depositing an adhesion layer between the conductive film electrode and the flexible substrate during folding test by a folding test platform. The folding test platform controls folding curvature of the flexible conductive substrates, folding times, and velocities in this study. Moreover, the electrical properties of flexible conductive substrates are measured during folding testing by the folding test platform. Eventually, this study successfully analyzes residual strain, adhesive stress, and electrical properties of flexible gold coated on polydimethylsiloxane substrates with chromium, nickel, and titanium adhesion layers up to 0.5/cm folding curvature during folding testing. The chromium adhesion layer had the best performance based on the largest adhesive stress, only 3.74 X resistance increase and 4.53 X maximum resistance up to 0.5/cm folding curvature during folding test by a folding test platform. The experimental result with chromium adhesion layer is consistent with adhesive stress analysis and provides a better adhesive strength between gold and polydimethylsiloxane than nickel and titanium materials for folding test. Therefore, adhesive stress analysis is adapted to evaluate the foldable electronics performance for improving folding characteristics easier.
关键词： flexible electronics,Folding electrical property,folding test platform,adhesive stress analysis,adhesion layer
更新于2025-09-23 15:22:29
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The transmittance and sheet resistance of chemically and heat reduced graphene oxide film
摘要： The graphene oxide (GO) sheets were prepared from Hummer’s method. The reduced process is important to graphene related materials for widely functional use in many photo-electric fields. Chemically and heat reduced treatment are carried out in this research and the electrical and optical properties of reduced GO films are measured. The size of GO sheets was examined by transmission electron microscopy with a size of about 5–6 μm. The chemically converted graphene (CCG) film are made by spin coating method. We used different GO concentration and different spin coating times to investigate the properties of graphene transparent conductive films. As the decrease of the GO concentration of solution and the times of spin coating, the transmittance is higher. The electrical property of the mixing of GO and CCG is more stable than the GO sheets only, this is discussed in this research and it is cause by the stacking condition of sheets. The conductivity of reduced graphene oxide film come from GO is lower than that come from CCG, we suppose that is because that the overlapping is less (i.e. film-forming ability) in the former, the transmittance and sheet resistance are 56 T% and 50 kohm/sq.
关键词： Graphene oxide,Electrical property,Liquid-phase exfoliation,Transparent conductive films,Chemical reduced graphene oxide
更新于2025-09-23 15:21:21
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Enhanced charge injection in 6, 13-bis(triisopropylsilylethylnyl)-pentacene field-effect transistors with a rhenium oxide buffer layer
摘要： We introduce a transition metal oxide, rhenium trioxide (ReO3), as a charge injection buffer layer for 6,13-bis(triisopropylsilylethylnyl)-pentacene (TIPS-pentacene) field-effect transistors (FETs). By inserting a ReO3 layer, a large energy barrier between silver source electrode and TIPS-pentacene layer was significantly reduced. While the TIPS-pentacene FETs showed low hole mobility (μh) of 0.25 cm2V?1s?1 and large threshold voltage (VTH) of ?25 V due to large contact resistance (RC) of 155 kΩ·cm, the TIPs-pentacene FETs with ReO3 decreased RC as low as 28 kΩ·cm. Thus, we can improve μh two times bigger (~ 0.46 cm2V?1s?1) and reduce VTH around 0 V. Together with these improved electrical characteristics, the TIPS-pentacene with ReO3 shows much stable operation under gate voltage bias stress condition. The shift of VTH and degradation of μh which were shown in the TIPS-pentacene FET without ReO3 is suppressed in the TIPS-pentacene FETs with ReO3 under both positive and negative bias condition.
关键词： ReO3,transistors,TIPS-pentacene,electrical property,thin-film,contact resistance,organic
更新于2025-09-19 17:15:36
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Room-Temperature-Processed Amorphous Sn-In-O Electron Transport Layer for Perovskite Solar Cells
摘要： We report amorphous tin-indium-oxide (TIO, Sn fraction: >50 atomic percentage (at%)) thin films as a new electron transport layer (ETL) of perovskite solar cells (PSCs). TIO thin films with Sn fraction of 52, 77, 83, 92, and 100 at% were grown on crystalline indium-tin-oxide (ITO, Sn fraction: ~10 at%) thin films, a common transparent conducting oxide, by co-sputtering In2O3 and SnO2 at room temperature. The energy band structures of the amorphous TIO thin films were determined from the optical absorbance and the ultraviolet photoelectron spectra. All the examined compositions are characterized by a conduction band edge lying between that of ITO and that of perovskite (here, methylammonium lead triiodide), indicating that TIO is a potentially viable ETL of PSCs. The photovoltaic characteristics of the TIO-based PSCs were evaluated. Owing mainly to the highest fill factor and open circuit voltage, the optimal power conversion efficiency was obtained for the 77 at%-Sn TIO ETL with TiCl4 treatment. The fill factor and the open circuit voltage changes with varying the Sn fraction, despite similar conduction band edges. We attribute these differences to the considerable changes in the electrical resistivity of the TIO ETL. This would have a significant effect on the shunt and/or the series resistances. The TIO ETL can be continuously grown on an ITO TCO in a chamber, as ITO and TIO are composed of identical elements, which would help to reduce production time and costs.
关键词： perovskite solar cell,electron transport layer,electrical property,tin-indium-oxide,band structure,room temperature
更新于2025-09-16 10:30:52
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Reference-Based Integral MR-EPT:Simulation and Experiment Studies on the 9.4T MRI
摘要： Current integral-equation (IE) based MR electrical properties tomography (EPT) methods utilize simulated incident radio-frequency (RF) fields, which are inaccurate and lead to reconstruction errors. To improve the accuracy and practicability of IE-based MR-EPT methods, a new approach is presented that obtains the incident fields using reference subjects and RF field mapping techniques. The Incident field approximation (IFA) is first demonstrated in this paper. This approximation assumes that two imaged subjects with similar coil/subject interactions will have similar incident RF fields, thus one can feed the estimation of the incident fields within the imaged subject into the calculation of those within a homogeneous subject (reference subject). This is done by measuring the total RF fields (??1+) of the reference using field mapping techniques, using the known EPs of the reference subject and by rearranging Ampere’s Law and the integral equations. The calculated incident RF fields are then used to reconstruct the EPs’ distribution with a three-dimensional (3D) integral-based MR-EPT method. Numerical simulation results indicated that the incident RF fields obtained from the reference subject provide accurate 3D reconstruction of EPs with less than 16% root mean square error (RMSE) in noise-free scenario while the conventional IE method had more than 28% RMSE. The phantom-based experiments at 9.4T MRI system have also been conducted to evaluate the performance of the proposed method and the results indicated that the proposed method achieved desirable robustness against the noise in practical scenario with less than 21% RMSE while the conventional differential equation-based method showed worse than 37% RMSE.
关键词： specific absorption rate,magnetic resonance imaging,integral equation,Electrical property tomography
更新于2025-09-11 14:15:04
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Chemical Bath Deposition of Undoped and Bi-doped n-Cu2Se Films and their Optoelectrical Properties
摘要： Introduction: The effluence of Bi3+ doping on the microstructure and property of the undoped and Bi3+-doped Cu2Se films deposited by chemical bath deposition were studied. Methods: The films showed average UV-visible transmittances of ~73.29-84.10 % that increased with increasing Bi3+ content. The optical bandgaps calculated from optical spectra increased with increasing Bi3+ content. Strong bandgap emission at ~629 nm was also observed. Moreover, the films had actual Se/Cu<2 and n-type conductive. Result: The sheet resistance of ~4.13-96.44×10-3 Ω·cm first decreased and then increased with the increase in Bi content. Conclusion: Various optical constants of the films were estimated with the UV-visible light spectra.
关键词： film deposition,optical property,electrical property,doping,Cu2Se,semiconductor
更新于2025-09-09 09:28:46
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Tailoring chemical and physical properties of graphene-added DNA hybrid thin films
摘要： While the characteristics of DNA and graphene are well studied, the chemical and physical properties of graphene-embedded DNA and cetyltrimethyl-ammonium chloride-modified DNA (CT-DNA) hybrid thin films (HTFs) have been rarely discussed due to the limited development of fabrication methodologies. Herein, we developed a simple drop-casting method for constructing DNA and CT-DNA HTFs added with graphene nanopowder (GNP). Additionally, we demonstrated their distinct characteristics, such as their structure, elemental composition, spin states and chemical functional groups, binding interactions, vibration/stretching modes, UV-Vis absorption, PL, and electrical properties. The EDS spectra of GNP-added DNA HTFs showed C, N, O, Na, and P peaks at characteristic energies. Because of the physical adsorption of GNP on DNA, the peak shifts and suppression of the core spectra of O 1s and P 2p were observed by XPS. The intensity variation of Raman and FTIR bands indicated hybrid formation of GNP in DNA and CT-DNA through adsorption, electrostatic interaction, and π–π stacking. UV-Vis absorption and PL spectra showed the considerable influence of GNP in DNA and CT-DNA HTFs. DNA and CT-DNA HTFs with relatively higher [GNP] showed significant increases of current due to the formation of interconnected networks of GNP in the DNA and CT-DNA HTFs.
关键词： spectroscopy,DNA,electrical property,hybrid thin film,graphene
更新于2025-09-04 15:30:14