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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Inserting a Low-Refractive-Index Dielectric Rear Reflector into PERC Cells: Challenges and Opportunities
摘要： Light emitting devices based on Si quantum dots/SiO2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.
关键词： electroluminescence (EL),Direct current (dc),Si quantum dots (Si QDs),frequency dependent
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Evaluation of Unauthorization at the Express-Control of Heating of Natural Gas
摘要： Light emitting devices based on Si quantum dots/SiO2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.
关键词： electroluminescence (EL),Direct current (dc),Si quantum dots (Si QDs),frequency dependent
更新于2025-09-23 15:21:01
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Direct Examination of the Deactivation of the Boron–Oxygen Center in Cz-Si Solar Cells Under Regeneration Conditions via Electroluminescence
摘要： We examine the regeneration kinetics of the boron–oxygen defect in boron-doped p-type Czochralski-grown silicon (Cz-Si) solar cells as a function of the excess carrier concentration Δn at the regeneration conditions, i.e., at elevated temperature (140 °C). To perform the regeneration, we apply different forward-bias voltages (Vappl) to solar cells in darkness and measure directly the emitted electroluminescence (EL) signal at different time steps during the regeneration of the cell. Measuring the EL signal emitted by the solar cell during regeneration, we are able to directly determine Δn during regeneration for each applied voltage. In addition to the EL signal, we measure the electric current flowing through the solar cell during the regeneration process. This current is proportional to the overall recombination rate in the cell and, hence, reflects the changing bulk recombination during the regeneration process. From the measured time-dependent cell current, we determine the deactivation rate constant Rde of the boron–oxygen defect. Our experimental results unambiguously show that Rde increases proportionally with Δn during the regeneration process.
关键词： Boron–oxygen defect,injection,regeneration,electroluminescence (EL),carrier,passivated emitter and rear cells (PERCs),Czochralski-grown silicon,light-induced degradation (LID)
更新于2025-09-12 10:27:22
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Analysis of electroluminescence spectra from high optical-power density forward-biased silicon-led in standard CMOS technology
摘要： A Si-LED with high-power density p+-n junction and wedge-shaped electrodes was fabricated by standard complementary metal oxide-semiconductor (CMOS) process, and its electroluminescence (EL) spectra were measured at different forward currents. By studying the EL spectra, two interesting phenomena were found. One was that the main peak of EL spectra transited from long wavelength (1135 nm) to short wavelength (1078 nm) along with the forward current increased. The other was that two light emission peaks with energy larger than band gap (Eg) were observed. For the first time, reasonable explanations to the two phenomena were given. Here, the peak shift is attributed to that, with forward current increased, the electron-hole pair recombination of the bound excitons without assist of phonons, increases faster than that of those bound or free excitons with assist of phonons. And the existence of two energy-high light emission peaks is resulted from that, under strong electric field, hot holes absorb one or two phonons from the crystal lattice and then recombine with electrons in conduction band.
关键词： Wedge-shaped pinpoint electrode,CMOS standard technology,Electroluminescence (EL) spectra,Silicon-based light-emitting devices (Si-LEDs),Strong electric field
更新于2025-09-12 10:27:22
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Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs
摘要： This paper investigates the trapping mechanisms in gate-injection transistors (GITs) without and with a pdrain electrode, referred to as GITs and Hybrid-Drain-embedded GITs (HD-GITs), respectively, used to inject holes and reduce charge trapping effects. We compare the two sets of devices under both the OFF-state and semi-ON state, to investigate the role of hot electrons in favoring the charge trapping. The analysis is based on combined pulsed characterization, transient measurements, and electroluminescence (EL) characterization. We demonstrate the following relevant results: 1) GITs and HD-GITs have comparable and negligible dynamic RON when trapping is induced in the OFF-state; under semi-ON state conditions, GITs suffer from significant dynamic RON, while HD-GITs show no additional trapping with respect to OFF-state; 2) EL characterization carried out until VDS = 500 V in semi-ON conditions shows comparable features, suggesting that the electric field and hot-carrier density are similar in GITs and HD-GITs. This result indicates that the hot-electron trapping rate is identical for the two sets of samples, so the difference observed in dynamic RON must be ascribed to a different detrapping rate; 3) transient RON measurements indicate that the traps filled in the OFF-state conditions are the same as those filled by hot electrons in semi-ON, with Ea = 0.8 eV (possibly CN); and 4) EL analysis under constant bias indicates that in GITs there is a time-dependent increase in the luminescence signal at the drain terminal, when the devices are biased with VDS = 300 V. Such effect, indicative of hot-electron trapping, is not observed in HD-GITs. Based on the experimental evidence collected within this paper, we conclude that—in the semi-ON state—the main difference between GITs and HD-GITs consists in a faster detrapping rate of hot electrons, achieved through hole injection from the pdrain terminal.
关键词： gate-injection transistors (GITs),Electroluminescence (EL),gallium nitride (GaN) HEMT,trapping,hot electron
更新于2025-09-10 09:29:36