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Copper electrodeposition on silicon electrodes
摘要： A two-step process is reported for the electrochemical deposition of copper layers on n-type silicon substrates using an acidic copper sulphate solution without addition of additives and no light assistance. Metal layers were generated on electrodes with different crystal orientations. The process consists of a combination of two very common techniques: chronoamperometry and pulse plating. The former technique is applied to obtain an instantaneous nucleation on the working electrode. Therefore, a large amount of metal nuclei is formed on the substrate before the pulse technique starts. The latter is, then, used to grow the particles previously generated and form a homogeneous metal layer with full coverage onto the semiconductor electrodes. The potential magnitudes are carefully chosen in line with energy levels observed at the semiconductor-electrolyte interface and were also calculated in this work.
关键词： silicon coating,seedless electroplating,copper plating,semiconductor-electrolyte interface,pulse plating
更新于2025-09-23 15:22:29
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Non-parabolic potential dependence of optical second harmonic generation from the Si(111) electrode/electrolyte interface
摘要： We performed potential dependent second harmonic generation (SHG) measurements on the Si(111) electrolyte interface at different azimuthal angles and for different polarization combinations. When the external potential was biased from the equilibrium potential to the flatband potential (Efb), the SHG intensity decreased linearly with the potential when the azimuthal angle was oriented at 301. This linearity extends well beyond the linear region of the Mott–Schottky plot as measured traditionally by capacitance measurements. When the external potential was scanned from Efb toward more negative potentials, the response of SHG intensity showed quadratic behavior and can be described by the parabolic model. The non-parabolic potential dependence cannot be explained with the parabolic model proposed from previous literature. Such asymmetric behavior only implied that the interfacial structure of the Si(111) electrode changes from semiconductor to metal with the applied electric potential biased negatively, i.e. with accumulation of electrons in the surface region. The anisotropic contribution from the Si(111) electrode can also significantly affect the SHG response as seen where the minimum of the potential dependent SHG curve shifts away from Efb.
关键词： potential dependence,Si(111) electrode,electrolyte interface,non-parabolic behavior,second harmonic generation
更新于2025-09-23 15:19:57