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oe1(光电查) - 科学论文

22 条数据
?? 中文(中国)
  • Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films

    摘要: Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.

    关键词: electron-phonon coupling,optical switches,interband transitions,all optical broadband switching,first principles simulation,amorphous selenium thin films,ultrafast defect dynamics,sub-bandgap region,transient defects

    更新于2025-09-04 15:30:14

  • Electron–phonon coupling in single-layer MoS2

    摘要: The electron–phonon coupling strength in the spin–split valence band maximum of single-layer MoS2 is studied using angle-resolved photoemission spectroscopy and density functional theory-based calculations. Values of the electron–phonon coupling parameter λ are obtained by measuring the linewidth of the spin–split bands as a function of temperature and fitting the data points using a Debye model. The experimental values of λ for the upper and lower spin–split bands at K are found to be 0.05 and 0.32, respectively, in excellent agreement with the calculated values for a free-standing single-layer MoS2. The results are discussed in the context of spin and phase-space restricted scattering channels, as reported earlier for single-layer WS2 on Au(111). The fact that the absolute valence band maximum in single-layer MoS2 at K is almost degenerate with the local valence band maximum at Γ can potentially be used to tune the strength of the electron–phonon interaction in this material.

    关键词: Density functional theory,Angle-resolved photoemission spectroscopy,Transition metal dichalcogenides,Electron-phonon coupling

    更新于2025-09-04 15:30:14