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<i>N</i> -Cyanoimine as an electron-withdrawing functional group for organic semiconductors: example of dihydroindacenodithiophene positional isomers
摘要： Manipulating frontier molecular orbitals by chemical design is one of the chief aspects of organic electronics. For applications in the field of n-type organic field-effect transistors (OFET), depressing the LUMO energy level is particularly important to ensure efficient charge injection. In this work, we report the incorporation of electron-withdrawing cyanoimine functional groups on the bridges of dihydroindacenodithiophene regioisomers. Cyanoimines are barely known in the field of organic electronics but herein have been found to be highly efficient in depressing the LUMO energy level of an organic semiconductor and can thus be envisaged as an attractive alternative to widely known electron-withdrawing units such as dicyanovinylene. This work focuses on a detailed structure–property relationship study, including the incorporation in n-type OFETs, of two dihydroindacenodithiophene regioisomers bearing two cyanoimine groups either in a syn- or an anti-configuration. As far as we know, this work is only the second example reported to date on N-cyanoimines incorporated in n-type OFETs, and shows the potential of these functional groups in organic electronics.
关键词： organic semiconductor,dihydroindacenodithiophene,electron-withdrawing group,positional isomers,N-cyanoimine,n-type OFET
更新于2025-09-19 17:15:36
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Suppressing Ambipolar Characteristics of WSe <sub/>2</sub> Field Effect Transistors Using Graphene Oxide
摘要： Monolayer (1L) tungsten diselenide (WSe2) is of interest for next generation ultrathin flexible electronic devices. However, typical WSe2 field effect transistors (FETs) show ambipolar characteristics that are not desirable for complementary field-effect-transistors and circuits. Here, significant suppression of the ambipolar characteristics of a 1L-WSe2 FET is demonstrated by using an electron withdrawing functional group of graphene oxide (GO). The pristine 1L-WSe2 FET shows n-type dominant ambipolar characteristics, whereas the GO coated 1L-WSe2 FET shows unipolar p-type behavior with a huge decrease (1/106) of current level of the n-channel. Also, the current level of the p-channel increases up to ten times that of the pristine 1L-WSe2 FET. These results are applicable for the realization of flexible nanoscale digital logic devices by using transition metal dichalcogenides.
关键词： field-effect-transistors,ambipolar,monolayer WSe2,unipolar,electron-withdrawing group
更新于2025-09-10 09:29:36
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Extremely Photostable Electron-Deficient Phthalocyanines That Generate High Levels of Singlet Oxygen
摘要： A robust lead-mediated synthetic procedure for the generation of phthalocyanines substituted with electron-withdrawing groups has been developed. The free-base phthalocyanine and various metal complexes were prepared without discernible degradation of the peripheral electron-withdrawing substituents. Upon irradiation with red light, some of the thus obtained metal complexes generated high levels of singlet oxygen. Especially a palladium complex exhibited attractive photostability upon exposure to singlet oxygen as a bleaching agent. The photostability of such complexes that may manifest concomitantly to the generation of high levels of singlet oxygen was attributed to the presence of the electron-withdrawing groups, which results in energetically low-lying highest occupied molecular orbitals.
关键词： lead,phthalocyanine,singlet oxygen,electron-withdrawing group,photostability
更新于2025-09-10 09:29:36