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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Electroreflectance studies of Zn(O,S) buffer layers in Cu(In,Ga)Se <sub/>2</sub> solar cells: Bandgap energies and secondary phases
摘要： Solution-grown Zn(O,S) buffer layers in Cu(In,Ga)Se2 (CIGS) solar cells are investigated by angle-resolved electroreflectance (ER) spectroscopy. We demonstrate that ER can be used directly to measure the bandgap energy of very thin Zn(O,S) buffer layers in the device. Furthermore, ER measurements on CIGS solar cells with different gallium concentrations before and after thermal annealing (TA) were conducted and show no significant influence of the gallium concentration and TA on the buffer’s bandgap energy, as determined in the range of 2.8 – 2.9 eV. Moreover, some ER spectra exhibit an additional contribution at 2.3 eV. This finding can be ascribed to a secondary phase at the interface between CIGS absorber and Zn(O,S) buffer layer.
关键词： S) buffer layers,Zn(O,Cu(In,Ga)Se2 solar cells,secondary phases,electroreflectance spectroscopy,bandgap energies
更新于2025-09-19 17:13:59
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Investigation of the incident light intensity effect on the internal electric fields of GaAs single junction solar cell using bright electroreflectance spectroscopy
摘要： The incident light intensity (Iex) effects on a GaAs single junction solar cell (SC) was investigated using bright electroreflectance spectroscopy (BER) and current-voltage (J-V) measurements at room temperature. The p-n junction electric field (Fpn) of the SC was evaluated by analyzing the Franz Keyldesh oscillation (FKO) in the BER spectra. The Iex effect on Fpn was investigated at various incident light intensities from 0.03 to 25 suns. The Fpn decreased gradually with increasing Iex due to the photovoltaic effect. For the forward bias voltage, some part of the electrons and holes drifted to the p and n sides, respectively, and produced the induced electric field in the same direction of the Fpn. Therefore, the Fpn increased up to 2.5 suns. At more than 2.5 suns, most of the electrons and holes moved to the n and p sides and decreased the Fpn due to the photovoltaic effect. In addition, the Fpn was examined under light illumination as a function of different DC bias voltages (-0.2 ~ 0.4 V). The Fpn decreased with increasing bias voltage due to the decrease in potential barrier. The Fpn increased with increasing bias voltage due to the decrease in the photogenerated carrier-induced electric field for high Iex.
关键词： GaAs solar cell,Bright electroreflectance spectroscopy,Electric field
更新于2025-09-19 17:13:59