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Epitaxial Yttria-Stabilized Zirconia on Muscovite for Flexible Transparent Ionic Conductors
摘要： The advantages of ionic conductors have attracted great interests worldwide since they can fit the requirements which standard electrical conductors struggle to meet. Yttria-stabilized zirconia (YSZ) is the most common ionic conductors for various practical applications. In this study, in order to bring ionic conductors into the field of soft technology, transparent YSZ films with superior mechanical flexibility were epitaxially grown on muscovite substrate by pulsed laser deposition. The epitaxial relation between YSZ and muscovite has been well established, indicating a high crystallinity thin film. The heterostructure of YSZ/muscovite exhibits excellent ionic conductivity with great mechanical flexibility. The smallest bending radius of this heterostructure can be achieved is ~ 10 mm with excellent mechanical cyclabilty (>800 cycles) and stability (>105 s), serving as a new platform to fabricate highly flexible ionic conductors.
关键词： epitaxial growth,muscovite,transparent,ionic conductors,flexible,yttria-stabilized zirconia
更新于2025-09-23 15:21:21
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[NanoScience and Technology] Silicene (Prediction, Synthesis, Application) || Properties of Monolayer Silicene on Ag(111)
摘要： The expected properties of silicene and their theoretical background have already been discussed in Chaps. 1–3 and the different ways to synthesize this new 2D material in Chap. 5. It has already been mentioned that such a synthesis requires an adequate substrate material to accommodate the formation of a one-atom-thin silicon layer. Such a material is silver, in particular the Ag(111) surface plane. In this chapter the formation and properties of silicene formed epitaxially on the Ag(111)(1 × 1) surface are discussed. We will see that the properties of these silicene layers are modi?ed with respect to the ones of free-standing silicene, due to the interaction with the substrate. For this reason we will refer to it as epitaxial silicene and look in detail at its two-dimensional (2D) character. A more detailed look at the formation of Si layers on Ag(111) shows that, depending on the speci?c preparation conditions, several 2D Si phase can be formed. Differences and similarities of these structures will be discussed. Furthermore, we will draw the intention on the chemical and temperature stability of these epitaxial silicene layers and unveil the limits for the silicene formation.
关键词： silicene,2D materials,Ag(111),vibrational properties,electronic properties,epitaxial growth
更新于2025-09-23 15:21:21
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[NanoScience and Technology] Silicene (Prediction, Synthesis, Application) || Atomic and Electronic Structure of Silicene on Ag: A Theoretical Perspective
摘要： The isolation of graphene sheets from its parent crystal graphites has given the kick to experimental research on its prototypical 2D elemental cousin, silicene [1]. Unlike graphene, silicene lacks a layered parent material from which it could be derived by exfoliation. Hence, the efforts of making the silicene dream a reality were focused on epitaxial growth of silicene on substrates. The first synthesis of epitaxial silicene on silver (111) [27, 46] and zirconium diboride templates [16] and next on an iridium (111) surface [31], has boosted research on other elemental group IV graphene-like materials, namely, germanene and stanene [30, 48]. The boom is motivated by several new possibilities envisaged for future electronics, typically because of the anticipated very high mobilities for silicene and germanene [49], as well as potential optical applications [30]. It is also fuelled by their predicted robust 2D topological insulator characters [14, 28] and potential high temperature superconductor character [5, 50]. One of the most promising candidates as a substrate is Ag because from the studies of the reverse system, where Ag atoms were deposited on silicon substrate, it was known that Ag and silicon make sharp interfaces without making silicide compounds.
关键词： theoretical perspective,electronic structure,silicene,Ag(111),epitaxial growth
更新于2025-09-23 15:21:21
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Epitaxial Mn <sub/>5</sub> Ge <sub/>3</sub> (100) layer on Ge (100) substrates obtained by flash lamp annealing
摘要： Mn5Ge3 thin films have been demonstrated as promising spin-injector materials for germanium-based spintronic devices. So far, Mn5Ge3 has been grown epitaxially only on Ge (111) substrates. In this letter, we present the growth of epitaxial Mn5Ge3 films on Ge (100) substrates. The Mn5Ge3 film is synthetized via sub-second solid-state reaction between Mn and Ge upon flash lamp annealing for 20 ms at the ambient pressure. The single crystalline Mn5Ge3 is ferromagnetic with a Curie temperature of 283 K. Both the c-axis of hexagonal Mn5Ge3 and the magnetic easy axis are parallel to the Ge (100) surface. The millisecond-range flash epitaxy provides a new avenue for the fabrication of Ge-based spin-injectors fully compatible with CMOS technology.
关键词： epitaxial growth,spintronic devices,Ge (100) substrates,flash lamp annealing,Mn5Ge3
更新于2025-09-23 15:21:21
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Benchmark of Disilane and Liquid Si for the Low Temperature Epitaxial Growth of Si, SiGe and SiGeB
摘要： We have benchmarked Liquid Silicon and Disilane for SiGe(:B) growth with Digermane and Diborane in the 450-550°C range (P=20 Torr). The Si growth rate exponentially increased with temperature (Ea = 37 kcal.mol.-1) and was, at 500°C, ten time higher with LS than with SiH4 (although the Si flow was 9 times lower). At 500°C, the SiGe GR (the Ge content) increased linearly (sub-linearly) with the Ge2H6 flow and was higher (definitively lower) with LS than with Si2H6. The SiGe growth rate exponentially increased with temperature (Ea = 10.5 kcal.mol-1) while the Ge content decreased (-1.95%/10°C). SiGe:B layers grown at 500°C with LS were pseudomorphic for all save the highest B2H6 flow. The SiGe:B GR and the atomic Boron concentration increased with F(B2H6), while the resistivity decreased (down to 3.1×10-4Ω.cm). Islands becoming less dense and smaller as the B2H6 flow increases were present on the SiGe:B surfaces which were atomically smooth.
关键词： SiGe,SiGeB,Liquid Silicon,Disilane,low temperature epitaxial growth
更新于2025-09-23 15:21:01
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Remote Phononic Effects in Epitaxial Ruddlesden-Popper Halide Perovskites
摘要： Despite their weak nature, van der Waals (vdW) interactions have been shown to effectively control the optoelectronic and vibrational properties of layered materials. However, how vdW effects exist in Ruddlesden-Popper layered halide perovskites remains unclear. Here we reveal the role of interlayer vdW force in Ruddlesden-Popper perovskite in regulating phase transition kinetics and carrier dynamics, based on high-quality epitaxial single crystalline (C4H9NH3)2PbI4 flakes with controlled dimensions. Both substrate-perovskite epitaxial interaction and interlayer vdW interaction play significant roles in suppressing the structural phase transition. With reducing flake thickness from ~100 nm to ~20 nm, electron-phonon coupling strength decreases by ~30%, suggesting the ineffectiveness of phonon confinement of the natural quantum wells. Therefore, the conventional understanding that vdW perovskite is equivalent to a multiple quantum well has to be substantially amended due to significant nonlocal phononic effects in the layered crystal where intralayer interaction is not drastically different from the interlayer force.
关键词： phase transition,electron-phonon coupling,Ruddlesden-Popper perovskites,epitaxial growth,van der Waals interactions
更新于2025-09-23 15:21:01
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Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
摘要： Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown ?-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the ?-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.
关键词： Gallium oxide,Surface morphology,Crystallinity,Precursor concentration,Mist chemical vapor deposition,Epitaxial growth,Wide bandgap semiconductors
更新于2025-09-23 15:21:01
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Grain growth in IN718 superalloy fabricated by laser additive manufacturing
摘要： The grain growth mechanism of IN718 superalloy fabricated by selective laser melting (SLM) was studied. Epitaxial growth with the same crystallographic orientation or rotating by 90° across the melting pool boundary and competitive growth in the same melting pool were observed. Either of the two patterns of epitaxial growth can maintain the same grain across the melting pool boundary. Competitive growth is determined by both the heat flow direction and preferred crystallographic orientation. In SLM, the grains grow along the preferred crystallographic orientation owing to a high solidification rate. The smaller the deviation angles between the heat flow direction and the preferred crystallographic orientation, the faster the grain growth rate.
关键词： competitive growth,crystallographic orientation,selective laser melting,IN718,Epitaxial growth
更新于2025-09-23 15:19:57
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Recent progress in epitaxial growth of III–V quantum-dot lasers on silicon substrate
摘要： In the past few decades, numerous high-performance silicon (Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based III–V quantum-dot (QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of III–V compounds. Although the material dissimilarity between III–V material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000s. In this paper, we review recent progress in the epitaxial growth of various III–V QD lasers on both offcut Si substrate and on-axis Si (001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.
关键词： quantum dots,silicon photonics,semiconductor laser,epitaxial growth
更新于2025-09-23 15:19:57
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High-Performance Germanium Waveguide Photodetectors on Silicon
摘要： Germanium waveguide photodetectors with 4 ??m widths and various lengths are fabricated on silicon-on-insulator substrates by selective epitaxial growth. The dependence of the germanium layer length on the responsivity and bandwidth of the photodetectors is studied. The optimal length of the germanium layer to achieve high bandwidth is found to be approximately 8 ??m. For the 4 × 8 ??m2 photodetector, the dark current density is as low as 5 mA/cm2 at ?1 V. At a bias of ?1 V, the 1550 nm optical responsivity is as high as 0.82 A/W. Bandwidth as high as 29 GHz is obtained at ?4 V. Clear opened eye diagrams at 50 Gbits/s are demonstrated at 1550 nm.
关键词： responsivity,Germanium waveguide photodetectors,silicon-on-insulator substrates,selective epitaxial growth,bandwidth
更新于2025-09-23 15:19:57