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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Bosch Etching Study with Large Open Rate and Depth Application
摘要： With the development of semiconductor technology, Bosch etching technology is more and more used in 2.5D multi-die integration and 3D wafer level chip size package. Bosch etching can get a vertical via with anisotropic, which helps to promote miniaturization. Bosch etching process has a new challenge for large open rate and depth applications, such as PCR (polymerase chain reaction) chip and optical fingerprint chip scale package. This paper introduces some experiments with optimizing parameters, including chuck temperature, photo resist layer thickness and bias power. In this study, it is successful to develop a through-hole with 45% open rate and 350 um depth. The selectivity can be above 30:1 with 17 um photo resist layer under 5℃ chuck temperature. The etch rate can be 4.6 um/min with 3.1% uniformity in a good profile. At the same time, the scallop is about 50 nm. The bottom via open is 3 um larger than the top via with 51 um.
关键词： selectivity,uniformity,large open rate and depth,via side,etch rate,Bosch etching
更新于2025-09-23 15:22:29
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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper
摘要： Correlations between physical properties linking film quality with wet etch rate (WER), one of the leading figures of merit, in plasma-enhanced atomic layer deposition (PEALD) grown silicon nitride (SiNx) films remain largely unresearched. Achieving a low WER of a SiNx film is especially significant in its use as an etch stopper for technology beyond 7 nm node semiconductor processing. Herein, we explore the correlation between the hydrogen concentration, hydrogen bonding states, bulk film density, residual impurity concentration, and the WERs of PEALD SiNx using Fourier transform infrared spectrometry, X-ray reflectivity, and spectroscopic ellipsometry, etc. PEALD SiNx films for this study were deposited using hexachlorodisilane and hollow cathode plasma source under a range of process temperatures (270 °C – 360 °C) and plasma gas compositions (N2/NH3 or Ar/NH3) to understand the influence of hydrogen concentration, hydrogen bonding states, bulk film density, and residual impurity concentration on the WER. Varying hydrogen concentration and differences in the hydrogen bonding states resulted in different bulk film densities, and accordingly, a variation in WER. We observe a linear relationship between hydrogen bonding concentration and WER as well as a reciprocal relationship between bulk film density and WER. Analogous to the PECVD SiNx processes, a reduction in hydrogen bonding concentration arises from either (1) thermal activation or (2) plasma excited species. However, unlike the case with silane (SiH4)-based PECVD SiNx, PEALD SiNx WERs are affected by residual impurities of Si precursors (i.e., chlorine impurity). Thus, possible wet etching mechanisms in HF in which the WER is affected by hydrogen bonding states or residual impurities are proposed. The shifts of amine basicity in SiNx due to different hydrogen bonding states and the changes in Si electrophilicity due to Cl impurity content are suggested as the main mechanisms that influence WER in the PEALD processes.
关键词： plasma-enhanced ALD (PEALD),bulk film density,hexachlorodisilane (HCDS),wet etch rate (WER),silicon nitride,hydrogen/chlorine content,atomic layer deposition (ALD),hydrogen bonding state
更新于2025-09-23 15:21:01
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Isotropic silicon etch characteristics in a purely inductively coupled SF <sub/>6</sub> plasma
摘要： The characteristics of isotropic etching of silicon in a purely inductively coupled SF6 plasma are quantitatively studied. Since the etch results are strongly dependent on mask features, the authors investigated both large area and narrow trench etch characteristics. Circles of diameter 500 μm were used as a proxy for unpatterned surfaces and etched for different durations to establish the material etch rate and surface roughness. The average etch rate using the chosen recipe was found to be 2.27 μm/min. Arrays of narrow trenches ranging from 8 to 28 μm were also etched to analyze the effect of trench size on etch rate and degree of anisotropy. The etch rate of the trenches was found to strongly decrease with decreasing trench width. The results demonstrate that isotropic SF6 etch can be readily used as a replacement for more exotic silicon vapor phase etch chemistries such as XeF2.
关键词： etch rate,silicon,isotropic etching,SF6 plasma,inductively coupled plasma,anisotropy
更新于2025-09-12 10:27:22
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Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
摘要： SiO2 was etched in heptafluoropropyl methyl ether (HFE-347mcc3)/Ar and C4F8/Ar plasmas, separately, to evaluate the feasibility of the use of fluorinated ether plasmas as an alternative to perfluoro carbon plasmas. The etch rates of SiO2 in HFE-347mcc3/Ar plasma were higher than those in C4F8/Ar plasma because the O atoms in HFE-347mcc3 produced O radicals that reacted with fluorocarbons to produce volatile products, thus consuming more fluorocarbon films. In HFE-347mcc3/Ar plasmas, the changes in the normalized etch yield (NEY) with ion-incident angle followed nearly the same patterns at bias voltages higher than ?600 V, while the NEY at ?400 V was lower than those at other bias voltages. On the other hand, the NEYs of C4F8/Ar plasmas increased with bias voltage, indicating a strong dependence on the bias voltage. The characteristic changes in the NEY in HFE-347mcc3/Ar plasmas were correlated with the thickness and the fluorine-to-carbon ratio of the steady-state film formed on the surface of the substrate.
关键词： Steady-state fluorocarbon film,Etch rate,Angular dependence,Fluorinated ether plasma,Perfluoro carbon plasma
更新于2025-09-09 09:28:46