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Cryogenic Characterization of RF Low-Noise Amplifiers Utilizing Inverse-Mode SiGe HBTs for Extreme Environment Applications
摘要： The cryogenic performance of radiation-hardened radio-frequency (RF) low-noise amplifiers (LNAs) is presented. The LNA, which was originally proposed for the mitigation of single-event transients (SETs) in a radiation environment, uses inverse-mode silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) in its core cascode stages. In this prototype, the upper common-base SiGe HBT is configured in inverse mode for balanced RF performance and reduced SET sensitivity. In order to better exploit the inverse-mode LNAs in a variety of extreme-environment applications, the RF performance of the LNA was characterized using liquid nitrogen to evaluate cryogenic operation down to 78 K. While the SiGe LNA exhibits acceptable RF performance for all temperature conditions, there is a noticeable gain drop observed at 78 K compared to the conventional forward-mode design. This is attributed to the limited high-frequency performance of an inverse-mode SiGe HBT. As a guideline, compensation techniques including layout modifications and profile optimization are discussed for the mitigation of the observed gain degradation.
关键词： low-noise amplifier (LNA),heterojunction bipolar transistor (HBT),cascode,inverse mode,extreme environment,cryogenic measurement,silicon-germanium (SiGe)
更新于2025-09-11 14:15:04
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Gallium Oxide || Band alignments of dielectrics on (? 201) β-Ga2O3
摘要： β-Ga2O3 is an attractive wide direct bandgap semiconductor ((cid:1)4.9 eV) for power electronics, truly solar blind UV detection, and extreme environment applications [1–16]. The β monoclinic conformation of Ga2O3 is the most prominent of the five phases; it is already available commercially in up to 4-in diameter wafers with prices expected to drop significantly over the next few years as processes are further refined and more crystal growth companies enter the market. α and ε conformations have proven to be more difficult in determining growth parameters. Hydride vapor-phase epitaxy (HVPE) has shown some promise for growth of both of these phases but much development is still needed. As such, all the discussion in this chapter is on the β-phase.
关键词： extreme environment applications,β-Ga2O3,UV detection,power electronics,HVPE,monoclinic conformation,bandgap
更新于2025-09-09 09:28:46