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Enhanced Ferroelectric Photovoltaic Effect in Semiconducting Single-Wall Carbon Nanotubes/BiFeO <sub/>3</sub> Heterostructure Enabled by Wide-Range Light Absorption and Efficient Charge Separation
摘要： The interfacial electronic band structures of photovoltaic heterostructure devices greatly affect their light absorption and charge-transport properties and thus their photovoltaic performance. In this work, we report an enhanced ferroelectric photovoltaic effect in a semiconducting single-walled carbon nanotube (S-SWCNTs)/ferroelectric BiFeO3 (BFO) heterostructure. A wide range of light absorption was possible in this structure owing to the low bandgaps of the S-SWCNTs (0.2–2.1 eV) and BFO (2.2–2.7 eV). The heterostructure also enabled efficient charge separation owing to the strong built-in electric field resulting from the synergic effect of the formation of p–f–n junctions (p-type S-SWCNTs/ferroelectric (f) BFO/n-type Nb:SrTiO3) and the introduction of a polarization-mediated internal field in the ferroelectric BFO layer. Compared with a single-layer device (Pt/BFO/Nb:SrTiO3), the heterostructure device (Pt/S-SWCNTs/BFO/Nb:SrTiO3) exhibited substantial enhancement of the photovoltaic performance. The open-circuit photovoltage and short-circuit photocurrent density reached up to 0.23 V and ?7.52 mA cm?2 (corresponding to a photo-conversion efficiency of 4.40%) under one-sun illumination, respectively, after optimization of the ferroelectric layer thickness and appropriate interfacial band alignment. Moreover, by applying switchable electric polarization, this heterostructure could be tuned, enabling the development of controllable photovoltaic devices. Our findings demonstrate that the synergistic integration of materials with different functionalities is a promising approach for the design of photovoltaic devices with tunable performance.
关键词： BiFeO3,light absorption,single-walled carbon nanotube,heterostructure,charge separation,ferroelectric photovoltaic effect
更新于2025-09-23 15:21:01
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In-situ stress modulated ferroelectric photovoltaic effect in cluster-assembled TbFe <sub/>2</sub> /Bi <sub/>5</sub> Ti <sub/>3</sub> FeO <sub/>15</sub> heterostructural films
摘要： TbFe2/Bi5Ti3FeO15 heterostructural ?lms were prepared by inserting cluster-assembled TbFe2 microdiscs into a Bi5Ti3FeO15 matrix using low energy cluster beam deposition combined with sol-gel methods. The phase structure, ferroelectric properties, bandgap, photovoltaic spectral response, and performances of the ferroelectric photovoltaic effect were modulated by the in situ stress driven by magnetostriction of TbFe2 clusters under external magnetic ?elds. The short-circuit current, open-circuit voltage, and power conversation ef?cient increase with the in situ stress, reaching 0.026 mA/cm2, 9.5 V, and 5.88 (cid:2) 10(cid:3)2%, respectively, under a maximum in-stress of 0.075 GPa. So the high open-circuit voltage above bandgap is attributed to the distinct bandgap shifting and the effective separation of photogenerated electron-hole pairs derived from the in situ stress induced large built-in ?eld. The in situ stress dominated symmetry breaking contributes to the improvement of the power conversation coef?cient. The in situ dynamic internal stress provides a high ef?cient approach to modulate and improve ferroelectric photovoltaic effects.
关键词： magnetostriction,in situ stress,ferroelectric photovoltaic effect,bandgap shifting,TbFe2/Bi5Ti3FeO15 heterostructural films
更新于2025-09-12 10:27:22