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oe1(光电查) - 科学论文

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  • [NanoScience and Technology] Silicene (Prediction, Synthesis, Application) || Electronic and Topological Properties of Silicene, Germanene and Stanene

    摘要: In this chapter, we review the recent progress on electronic and topological properties of monolayer topological insulators including silicene, germanene and stanene. We start with the description of the topological nature of the general Dirac system and then apply it to silicene by introducing the spin and valley degrees of freedom. Based on them, we classify all topological insulators in the general honeycomb system. We discuss topological electronics based on honeycomb systems. We introduce the topological Kirchhoff law, which is a conservation law of topological edge states. Field effect topological transistor is proposed based on the topological edge states. We show that the conductance is quantized even in the presence of random distributed impurities. Monolayer topological insulators will be a key for future topological electronics and spin-valleytronics.

    关键词: topological Kirchhoff law,silicene,topological insulators,topological electronics,Dirac system,field effect topological transistor,spin and valley degrees of freedom,stanene,quantized conductance,germanene

    更新于2025-09-23 15:21:21