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A Surface Potential Based Model for Dual Gate Bilayer Graphene Field Effect Transistor Including the Capacitive Effects
摘要： In this work, a surface potential modeling approach has been proposed to model dual gate, bilayer graphene field effect transistor. The equivalent capacitive network of GFET has been improved considering the quantum capacitance effect for each layer and inter-layer capacitances. Surface potentials of both layers are determined analytically from equivalent capacitive network. The explicit expression of drain to source current is established from drift-diffusion transport mechanism using the surface potentials of the layers. The drain current characteristics and transfer characteristics of the developed model shows good agreement with the experimental results in literatures. The small signal parameters of intrinsic graphene transistor i.e. output conductance (gds), trans-conductance (gm), gate to drain capacitance (Cgd) and gate to source capacitance (Cgs) have been derived and finally, the cut-off frequency is determined for the developed model. The model is compared with reported experimental data using Normalised Root Mean Square Error (NRMSE) metric and it shows less than 16% NRMSE. A Verilog-A code has been developed for this model and a single ended frequency doubler has been designed in Cadence design environment using this Verilog-A model.
关键词： model,Field-effect transistor (FET),Verilog-A,Graphene,surface potential,frequency doubler.
更新于2025-09-23 15:22:29
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Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
摘要： Using capacitance, conductance and noise measurements, we investigate the trapping behavior at the surface and in the core of triangular-shaped one-dimensional (1D) array of GaN nanowire gate-all-around field effect transistor (GAA FET), fabricated via a top-down process. The surface traps in such a low dimensional device play a crucial role in determining the device performance. The estimated surface trap density rapidly decreases with increasing frequency, ranging from 6.07 × 1012 cm?2·eV?1 at 1 kHz to 1.90 × 1011 cm?2·eV?1 at 1 MHz, respectively. The noise results reveal that the power spectral density increases with gate voltage and clearly exhibits 1/f-noise signature in the accumulation region (Vgs > Vth = 3.4 V) for all frquencies. In the surface depletion region (1.5 V < Vgs < Vth), the device is governed by 1/f at lower frequencies and 1/f 2 noise at frequencies higher than ~ 5 kHz. The 1/f 2 noise characteristics is attributed to additional generation–recombination (G–R), mostly caused by the electron trapping/detrapping process through deep traps located in the surface depletion region of the nanowire. The cutoff frequency for the 1/f 2 noise characteristics further shifts to lower frequency of 102–103 Hz when the device operates in deep-subthreshold region (Vgs < 1.5 V). In this regime, the electron trapping/detrapping process through deep traps expands into the totally depleted nanowire core and the G–R noise prevails in the entire nanowire channel.
关键词： gate-all-around field effect transistor (FET),trap,nanowire,GaN,1/f-noise
更新于2025-09-23 15:22:29
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Tungsten Dichalcogenide Nanoflake/InGaZnO Thin-Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits
摘要： Heterojunction PN diode and inverter circuits are fabricated and presented, combining two-dimensional WSe2 nanoflake and amorphous InGaZnO (a-IGZO) thin film on a glass substrate. A heterojunction p-WSe2/n-IGZO diode exhibits rectifying characteristics and effectively responds to red light (λ = 620 nm) under a reverse bias. The combination of a heterojunction PN diode and IGZO field effect transistor (FET) leads to a diode-load inverter showing a peak voltage gain of about 12 at a supply voltage of 5 V. The same integration from the PN diode and n-FET displays the capability of visible light detection when a reverse-bias voltage is applied to the PN diode. Furthermore, after oxygen plasma treatment on the PN diode, it shows dramatically enhanced on/off rectification ratio of ≈5 × 105 due to the hole doping effect on the WSe2 nanoflake. Such an improved PN diode leads to an alternating current rectifier circuit as integrated with IGZO FET.
关键词： field-effect transistor (FET),inverter,WSe2,InGaZnO (IGZO),heterojunction PN diode,AC rectifier
更新于2025-09-23 15:19:57
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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Solution-processed P3HT:PbS based NIR Photodetector with FET Configuration
摘要： A near-infrared (NIR) solution-processed photodetector based on a mixture of PbS colloidal quantum dots (CQDs) and Poly(3-hexylthiophene) (P3HT) was presented. In a reverse field-effect transistor (FET) device configuration Au(S,D)/P3HT:PbS/PMMA/Al(G), uniform-sized and well-dispersed PbS CQDs were employed as NIR absorbing materials in the active layer. Meanwhile, the poly(methyl methacrylate) (PMMA) dielectric layer could be seen as an encapsulation to enhance the device stability. Herein, High “on/off” current ratio (Ion/Ioff) of 104 was obtained in dark, and the maximum photosensitivity (P) of 947 was gotten under 200 mW/cm2 980 nm illumination. When the irradiance reduced to 0.1 mW/cm2, the responsivity (R) and detectivity (D?) of the NIR photodetector reached 9.4 mA/W and 2.5×1011 Jones, respectively. Therefore, the P3HT:PbS hybrid FET-based NIR photodetector had shown both relatively high electrical and detecting performance, which provided an experimental foundation and method for the next fabrication of medical infrared detectors and sensors.
关键词： PbS colloidal quantum dots (CQDs),Near-infrared (NIR) photodetector,Poly(3-hexylthiophene) (P3HT),Field-effect transistor (FET)
更新于2025-09-16 10:30:52
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[IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Carrier Injection Mechanism of Metal-MoS<inf>2</inf> Ohmic Contact in MoS<inf>2</inf> FETs
摘要： In order to enhance the carrier injection of MoS2 field effect transistors (FETs,) understanding the injection mechanism of metal-MoS2 contacts is essential. In this work, MoS2 (FETs) with Ti and Sc electrodes were fabricated and characterized, respectively. The carrier injection mechanism was studied from the perspective of the tunneling models. With the narrower barrier width, the Sc-MoS2 contact shows a different injection mechanism from that of Ti-MoS2, making Sc a promising improvement as MoS2 FETs electrodes.
关键词： Ohmic contact,MoS2,tunneling,field effect transistor (FET)
更新于2025-09-09 09:28:46