- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Electronic transport in MoSe <sub/>2</sub> FETs modified by latent tracks created by swift heavy ion irradiation
摘要： Unique characteristics of transition metal dichalcogenides (TMDCs) such as their tunable band gap and ultra-thin body thickness make them potential candidates for applications in optoelectronic, gas sensing and energy storage devices. In this work, 1.8 GeV Ta ions at different ion fluences ranging from 1 × 109 ions cm?2 to 6 × 1010 ions cm?2 were used to introduce amorphous defective regions, latent tracks, in MoSe2 to study the electronic transport behavior in irradiated TMDC-channel field-effect transistors (FETs). Defects in these materials induced by the swift heavy ion irradiation play a vital role in the device applications. The results show that carrier mobility decreases while resistance of the devices increases abruptly with increasing ion fluences. The impact mechanism of the latent tracks on electronic transport behavior in TMDC-channel FETs was analyzed in detail. It was assumed that the Bloch wave of electrons was strongly localized by the latent tracks induced by the SHI irradiation and the Bloch wave of electrons can be scattered by the latent tracks as well. This study helps to investigate the influence of the latent tracks on electronic transport in other 2D materials as well.
关键词： latent track,field-effect transistor,molybdenum selenide,electronic transportation,swift heavy ion irradiation
更新于2025-11-14 17:03:37
-
Exploiting electrostatic shielding-effect of metal nanoparticles to recognize uncharged small molecule affinity with label-free graphene electronic biosensor
摘要： Label-free electronic biosensors as the non-electrochemical analytical tools without requirement of sophisticated instrumentation have become attractive, although their application in competitive affinity sensing of uncharged small molecules is hindered by a difficulty in the development of competing analogues. To break through this bottleneck, we report a novel analogue made by epitope-modified metal nanoparticles to enable the electronic signaling of small-molecule analyte recognition via competitive affinity. While the electronic signaling capability of metal nanoparticle analogues is demonstrated by a graphene field-effect transistor bioassay of small-molecule glucose as a proof-of-principle, interestingly, we discover a new electronic signaling mechanism in the metal nanoparticle affinity, different to the intuitive charge accumulation expectation. On the basis of Kelvin-probe force microscopic potential characterization and theoretical discussion, we fundamentally elucidated the signaling mechanism as a seldom used electrostatic shielding-effect, that is, in the analogue-receptor affinity, metal nanoparticles with the charge density lower than receptor biomolecules can reduce the collective electrical potential via charge dispersion. Further consider the convenient epitope-modifiability of metal nanoparticles, the easy-to-develop analogues for diverse target analyte might potentially be predictable in the future. And the application of label-free electronic biosensors for the competitive affinity bioassay of range-extended small molecules may thus be promoted based on the electrostatic shielding-effect.
关键词： electrostatic shielding-effect,competitive affinity,graphene field-effect transistor biosensor,uncharged small molecule,metal nanoparticle analogue
更新于2025-09-23 15:23:52
-
Determination of Selectivity Coefficients of Sodium and Potassium Ion-Selective Electrode Using Porous Silicon N-Type (100) Based Extended Gate Field Effect Transistor
摘要： Determination of Selectivity Coefficients of Sodium and Potassium Ion-Selective Electrode Using Porous Silicon N-Type (100) Based Extended Gate Field Effect Transistor
关键词： Sodium,Selectivity Coefficients,Porous Silicon,Extended Gate Field Effect Transistor,Ion-Selective Electrode,Potassium
更新于2025-09-23 15:23:52
-
Dithienobenzothiadiazole-Based Donor-Acceptor Polymer: Synthesis and Characterization for Organic Field-Effect Transistor
摘要： Conjugated polymers with coplanar conformation backbones can form a closer π-π stacking self-assembly in solid films, producing high charge-carrier mobility in organic field-effect transistors (OFETs). In this work, a new donor-acceptor (D-A) copolymer (PDTFBT-TVT) including (E)-2-(2-(thiophen-2-yl)vinyl)thiophene and dithienobenzothiadiazole conjugated units is synthesized via Stille copolymerization. It is found that PDTFBT-TVT has a good planar backbone structure with an optical band gap of 1.89 eV. Spun-cast film contains preferentially edge-on orientated polymer chains with respect to a polymer-treated SiO2 dielectric, yielding a hole mobility (μh) of 0.06 cm2 V-1 s-1 in OFET. Thermal annealing enhanced the π-conjugated ordering and orientation of PDTFBT-TVT chains in the spun-cast films. The annealed film-based OFETs show a considerable enhancement in μh up to 0.22 cm2 V-1 s-1, as well as high on/off current ratio of > 106.
关键词： organic field-effect transistor,donor-acceptor copolymer,dithienobenzothiadiazole
更新于2025-09-23 15:23:52
-
A new asymmetric anthracene derivative with high mobility
摘要： An asymmetric anthracene derivative (4-HDPA) was designed and synthesized. With the optimization of proper scenario of fabrication process, top-contact thin film devices based on 4-HDPA exhibit mobility as high as 3.59 cm2 V–1 s–1, while its single-crystal devices exhibit mobility as high as 5.12 cm2 V–1 s–1, which is higher than the symmetrical counterpart of 4-HDPA in both single-crystal and thin film devices.
关键词： organic field-effect transistor (OFET),mobility,asymmetric,anthracene derivative
更新于2025-09-23 15:23:52
-
Organic Transistor Based on Cyclopentadithiophene-Benzothiadiazole Donor-Acceptor Copolymer for the Detection and Discrimination between Multiple Structural Isomers
摘要： Distinguishing structural isomers is a critical and challenging task for biotechnology, chemical industry, and environmental monitoring. Approaches currently available are limited in terms of selectivity and simplicity. In this paper, a highly sensitive organic field-effect transistor (OFET) using the cyclopentadithiophene-benzothiadiazole (CDT-BTZ) copolymers as a semiconductor is presented for easy and selective detection of different families of structural isomers, as well as between different isomers within each family. High accuracy discrimination is achieved over a range of concentrations using only a single sensing parameter derived from the OFET characteristic transfer curve. As a reference, other homopolymer- and donor–acceptor copolymer-based OFET sensors are examined but do not have an equivalent sensing performance to that of the CDT-BTZ-based OFETs. Investigating the link between isomer absorption and swelling, supramolecular order and energy levels of the active layer reveals a unique effect of each isomer on the energy bands of the semiconducting polymer.
关键词： isomers,donor–acceptor copolymers,gas sensor,organic field-effect transistor,xylenes
更新于2025-09-23 15:23:52
-
Impact of oxide/barrier charge on threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor heterostructures
摘要： Threshold voltage instabilities in AlGaN/GaN metal-oxide-semiconductor (MOS) heterostructures were investigated by means of capacitance-voltage (CV) hysteresis measurement and simulations. We focused on the impact of net charge at oxide/semiconductor interface (Qint) on the CV hysteresis. Our simulations suggest that due to different band bending at the interface, any positive or negative Qint with lower density (in the order of 1012 cm?2) results in a presence of relatively shallow unoccupied oxide/barrier interface states in equilibrium. On the other hand, high density of negative Qint (Qint/q ≈ ?1013 cm?2) results in very deep unoccupied interface states, which in turn leads to incomplete electron re-emission during backward CV sweep and thus increased CV hysteresis of the MOS heterostructures compared to previous case. Impact of Qint is illustrated experimentally on MOS heterostructures with Al2O3 gate dielectric grown by metal-organic chemical vapor deposition, showing Qint of ?1.2 × 1013 and +0.5 × 1012 cm?2 for structures with and without post-deposition annealing, respectively. Our results therefore suggest that normally-off AlGaN/GaN MOS heterostructure field-effect transistors featuring high density of negative Qint can be expected to be more susceptible for threshold voltage instabilities compared to normally-on counterparts.
关键词： MOS,Al2O3 gate dielectric,Heterostructure field-effect transistor,Interface traps,AlGaN/GaN
更新于2025-09-23 15:23:52
-
Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices
摘要： Exploring optical memory functions in nonvolatile organic field-effect transistor (OFET) memories with top-gate/bottom-contact (TG/BC) configurations can offer effective routes for developing printable, high-density organic memory circuits capable of multi-level data storage. Here, we use a solution process to fabricate TG/BC OFET devices with organic floating-gate structures and investigate their memory characteristics under light illumination. A solution-processable organic composite of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and poly(methylmethacrylate) is employed to self-organize organic floating-gate structures on a solution-processed semiconductor layer composed of poly(3-hexylthiophene) (P3HT). The floating-gate OFET devices programmed with blue, green, and red light exhibit large threshold voltage (Vth) shifts of approximately 30 V and stable charge retention characteristics even under light illumination. The devices also exhibit high sensitivity to incident light during programming, and the degree of Vth shift and the on-state current can be tuned using light and programming voltage to facilitate distinct storage and readout of multi-level data.
关键词： floating-gate memory,organic field-effect transistor,top-gate/bottom-contact configuration,multi-level data storage,solution-processable organic material
更新于2025-09-23 15:23:52
-
The influences of temperature, humidity, and O2 on electrical properties of graphene FETs
摘要： The influences of temperature, humidity, and O2 to the gas sensing characteristics of graphene field effect transistors (FETs) have been studied as these environmental factors are often encountered in practical gas sensing applications. Both empirical results and theoretical analyses are characterized for heated graphene FET gas sensors from room temperature to 100°C under a wide range of applied gate voltages. It is found that at a constant applied gate voltage of -20 V with respect to the gate voltage at the neutrality point, the sensitivity of the device to humidity decreases; while the sensitivity to O2 decreases first, and increases afterwards as the operation temperature increases. These phenomena are explained by using the physisorption and chemisorption models between gases and the graphene surface. Furthermore, devices operate in the hole regime (the majority carrier is hole in the prototype devices) result in lower sensitivity to humidity and O2 as compared to those results of gas sensors operating in the electron regime due to the p-type doping effects of moisture and O2. As such, this work provides good foundations for graphene-based FET gas sensors in practical application environments under the influences of ambient air, temperature, and humidity.
关键词： ambient air,gas sensor,temperature,Graphene field effect transistor,humidity,oxygen
更新于2025-09-23 15:23:52
-
Device noise reduction for silicon nanowire field-effect-transistor based sensors by using a Schottky junction gate
摘要： The sensitivity of metal-oxide-semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1×10-9 V2μm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
关键词： Noise reduction,field-effect transistor,ion sensor,low frequency noise,schottky junction gate,silicon nanowire
更新于2025-09-23 15:23:52