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[IEEE 2018 International Conference on Intelligent and Innovative Computing Applications (ICONIC) - Mon Tresor, Plaine Magnien, Mauritius (2018.12.6-2018.12.7)] 2018 International Conference on Intelligent and Innovative Computing Applications (ICONIC) - OTA-C Filters for Biomedical Signal Processing Applications using Hybrid CMOS-CNFET Technology
摘要： Analog filters for biomedical signal processing applications deals with very slow or low frequency electrical activities of the physiological signals. This paper proposes first order, second order, fifth order elliptic low pass, second order notch and high pass OTA-C filters using hybrid CMOS-CNFET technology. Carbon Nanotube Field Effect Transistors (CNFETs) and CMOS devises can be heterogeneously integrated on a single 3-D chip to realize important signal processing building blocks such as OTA-C filters. Proposed circuits use Operational Transconductance Amplifier (OTA) as a building block for OTA-C filters. Realized filter circuits satisfy ultra-low power consumption requirement of wearable and implantable biomedical devices. The transistors used in the circuit operate in weak inversion to achieve ultra-low power consumption.
关键词： Noise Filtering,OTA-C Filters,Biomedical Signal Processing,Carbon Nanotube Field Effect Transistors
更新于2025-09-23 15:22:29
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Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors
摘要： We present the electrical detection of singlet fission in tetracene by using a field-effect transistor (FET). Singlet fission is a photo-induced spin-dependent process, yielding two triplet excitons from the absorption of a single photon. In this study, we engineered a more deterministic platform composed of an organic single crystal FET rather than amorphous or polycrystalline FETs to elucidate spin-dependent processes under magnetic fields. Despite the unipolar operation and relatively high mobility of single crystal tetracene FETs, we were able to manipulate spin dependent processes to detect magnetoconductance (MC) at room temperature by illuminating the FETs and tuning the bias voltage to adjust majority charge carrier density and trap occupancy. In considering the crystalline direction and magnetic field interactions in tetracene, we show the MC response observed in tetracene FETs to be the result of the singlet fission process.
关键词： organic field effect transistors,singlet fission,magnetoconductance,single crystalline organic semiconductors
更新于2025-09-23 15:22:29
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Tuning Contact Resistance in Top-Contact <i>p</i> -Type and <i>n</i> -Type Organic Field Effect Transistors by Self-Generated Interlayers
摘要： Contact resistance significantly limits the performance of organic field-effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work-function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom-contact OFETs. However, most methods are not suitable for deposition on organic films and incompatible with top-contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p- and n-type devices that is also suitable for top-contact OFETs. In this approach, judiciously selected interlayer molecules are co-deposited as additives in the semiconducting polymer active layer. During top contact deposition, the additive molecules migrate from within the bulk film to the organic/metal interface due to additive-metal interactions. Migration continues until a thin continuous interlayer is completed. Formation of the interlayer is confirmed by X-ray photoelectron spectroscopy (XPS) and cross-section scanning transmission electron microscopy (STEM), and its effect on contact resistance by device measurements and transfer line method (TLM) analysis. It is shown that self-generated interlayers that reduce contact resistance in p-type devices, increase that of n-type devices, and vice versa, confirming the role of additives as interlayer materials that modulate the effective work-function of the organic/metal interface.
关键词： organic electronics,TLM,self-generated interlayers,organic field-effect transistors
更新于2025-09-23 15:22:29
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Tertiary Amines Differentiated from Primary and Secondary Amines by Active Ester-Functionalized Hexabenzoperylene in Field Effect Transistors
摘要： Herein, we report two novel derivatives of hexabenzoperylene (HBP) that are functionalized with ester groups. Methyl acetate functionalized HBP (1) in single crystals self-assembles into a supramolecular nanosheet, which has a two-dimensional π-stack of HBP sandwiched between two layers of ester groups. With the same self-assembly motif, active ester-functionalized HBP (2) in field effect transistors has enabled differentiation of tertiary amines from primary and secondary amines, in agreement with the fact that active ester reacts with primary and secondary amines but not with tertiary amines to form amides.
关键词： sensors,organic field effect transistors,organic semiconductors,self-assembly,arenes
更新于2025-09-23 15:22:29
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Wafer-scale transferred multilayer MoS2 for high performance field effect transistors
摘要： Chemical vapour deposition (CVD) synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization of continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface and interfacial energy. In this work, a layer-by-layer vacuum stacking transfer method is applied to obtain uniform and non-destructive ML-MoS2 films. Back-gated field effect transistors (FET) arrays of 1L- and 2L-MoS2 are fabricated on the same wafer, and their electrical performances are compared. We observe a significant increase of field-effect mobility for 2L-MoS2 FETs, up to 32.5 cm2V-1s-1, which is 7 times higher than that of 1L-MoS2 (4.5 cm2V-1s-1). Then we also fabricated 1L-, 2L-, 3L-, and 4L-MoS2 FETs to further investigate the thickness dependent characteristics of transferred ML-MoS2. Measurement results show a higher mobility but a smaller current on/off ratio as the number of layer increases, suggesting that a balance between mobility and current on/off ratio can be achieved in 2L- and 3L-MoS2 FETs. Dual-gated structure is also investigated to demonstrate an improved electrostatic control of the ML-MoS2 channel.
关键词： Field effect transistors,Transfer,CVD growth,2D materials,MoS2
更新于2025-09-23 15:22:29
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Selective Transfer of Rotationally Commensurate MoS <sub/>2</sub> from an Epitaxially Grown van der Waals Heterostructure
摘要： Large-scale synthesis of high quality two-dimensional (2D) semiconductors are critical for their incorporation in emerging electronic and optoelectronic technologies. In particular, chemical vapor deposition (CVD) of transition metal dichalcogenides (TMDs) via van der Waals epitaxy on epitaxial graphene (EG) leads to rotationally commensurate TMDs in contrast to randomly aligned TMDs grown on amorphous oxide substrates. However, the interlayer coupling between TMDs and EG hinders the investigation and utilization of the intrinsic electronic properties of the resulting TMDs, thus requiring their isolation from the EG growth substrate. To address this issue, we report here a technique for selectively transferring monolayer molybdenum disulfide (MoS2) from CVD-grown MoS2-EG van der Waals heterojunctions using copper (Cu) adhesion layers. The choice of Cu as the adhesion layer is motivated by density functional theory calculations that predict the preferential binding of monolayer MoS2 to Cu in contrast to graphene. Atomic force microscopy and optical spectroscopy confirm the large-scale transfer of rotationally commensurate MoS2 onto SiO2/Si substrates without cracks, wrinkles, or residues. Furthermore, the transferred MoS2 shows high performance in field-effect transistors with mobilities up to 30 cm2/Vs and on/off ratios up to 106 at room temperature. This transfer technique can likely be generalized to other TMDs and related 2D materials grown on EG, thus offering a broad range of benefits in nanoelectronic, optoelectronic, and photonic applications.
关键词： molybdenum disulfide,van der Waals epitaxy,two-dimensional semiconductors,field-effect transistors,copper adhesion layers,transition metal dichalcogenides,chemical vapor deposition
更新于2025-09-23 15:21:21
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Recent Advances in Black Phosphorus-Based Electronic Devices
摘要： The rediscovery of graphene in the recent past has propelled the rapid development of exfoliation and other thin layer processing techniques, leading to a renewed interest in black phosphorus (BP). Since 2014, BP has been extensively studied due to its superior electronic, photonic, and mechanical properties. In addition, the unique intrinsic anisotropic characteristics resulting from its puckered structure can be utilized for designing new functional devices. In retrospect, significant efforts have been directed toward the synthesis, basic understanding, and applications of BP in the fields of nanoelectronics, ultrafast optics, nanophotonics, and optoelectronics. Here, the recent development of BP-based devices, such as nanoribbon field-effect transistors, complementary logic circuits, memory devices, and the progress made in meeting the challenges associated with contact resistance, in-plane anisotropy, and advanced gate stack, are reviewed. Finally, the prospects of 2D materials in meeting the International Technology Roadmap for Semiconductor requirements for the year 2030 are discussed.
关键词： black phosphorus,memory,gas sensors,field-effect transistors,complementary logic circuits
更新于2025-09-23 15:21:21
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Conjugated Polymers Based on Thiazole Flanked Naphthalene Diimide for Unipolar n-Type Organic Field-Effect Transistors
摘要： This paper reports the rational design and synthesis of a novel electron-withdrawing building block, thiazole flanked naphthalene diimide (TzNDI), which offers a coplanar conformation and deep-lying highest occupied molecular orbitals energy level in resulting conjugated polymers. A series of conjugated polymers (PTzNDI-2FT, PTzNDI-T, PTzNDI-Se, and PTzNDI-2T) consisting of TzNDI and different donor units were synthesized and characterized. The polymers all possess a high molecular weight and excellent thermal property. Their intense light absorption in low energy bands suggests an enhanced intramolecular charge transfer. The organic field-effect transistors (OFETs) based on these polymers exhibit unipolar n-type transport characteristics with low off current and high on–off current ratio. More importantly, all the devices exhibit near ideal transfer curves with kink-free transfer characteristics. Among these polymers, PTzNDI-2FT exhibits the highest electron mobility (μe) of 0.57 cm2 V?1 s?1, outperforming the commercial n-type polymer N2200 (0.41 cm2 V?1 s?1) under the same conditions. These results demonstrate that TzNDI is a promising building block for high performance unipolar n-type conjugated polymers in OFETs.
关键词： Unipolar n-Type,Thiazole Flanked Naphthalene Diimide,Conjugated Polymers,Organic Field-Effect Transistors
更新于2025-09-23 15:21:21
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Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides
摘要： Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104.
关键词： n-channel,field effect transistors,van der Waals junction,transition metal dichalcogenides,p-channel
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Singapore, Singapore (2019.8.28-2019.8.30)] 2019 IEEE 16th International Conference on Group IV Photonics (GFP) - Understanding the Sidewall Dependence of Loss for Ge-on-Si Waveguides in the Mid-Infrared
摘要： An empirical model for field-effect transistor (FET) based power detectors is presented. The electrical model constitutes a Volterra analysis based on a Taylor series expansion of the drain current together with a linear embedding small-signal circuit. It is fully extracted from S-parameters and IV curves. The final result are closed-form expressions for the frequency dependence of the noise equivalent power (NEP) in terms of the FET intrinsic capacitances and parasitic resistances. Excellent model agreement to measured NEP of coplanar access graphene FETs with varying channel dimensions up to 67 GHz is obtained. The influence of gate length on responsivity and NEP is theoretically and experimentally studied.
关键词： field-effect transistors (FETs),Volterra,terahertz detectors,microwave detectors,graphene,power detectors,Analytical model
更新于2025-09-23 15:21:01