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[IEEE 2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT) - Kanpur, India (2019.7.6-2019.7.8)] 2019 10th International Conference on Computing, Communication and Networking Technologies (ICCCNT) - An organic-inorganic solar cell with graphene as an electron transport layer: an approach to increase the carrier collection efficiency
摘要： Methyl-Ammonium lead halide based solar cell has shown a tremendous approach to fulfill the energy crisis on the earth for its high efficiency and low manufacturing cost. While there are some other materials which influence the execution of Perovskite sunlight based cell, these materials are nothing but the electron as well as hole transport materials. In this article the behavior and performances of electron transport materials are mostly focused which generally increase the proficiency of Perovskite solar cell by simultaneously increasing the open circuit voltage and short circuit current. The role of graphene as an electron transport material is mainly discussed and also compared with some other metal oxide electron transport material as well as organic-based electron transport material. As keeping graphene as an electron transport material the predicted results of Perovskite solar cell are as follows: - maximum power conversion efficiency (PCE) = 23.42%, short-circuit-current-densit=3.25A/m2,open-circuit-voltage=0.86v,fill factor=0.83au. So graphene-based electron transport material can be the entry for the improvement of Perovskite solar cell.
关键词： electron transport materials,fill factor,efficiency,open circuit voltage,graphene,Perovskite solar cell,short-circuit current density
更新于2025-09-16 10:30:52
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Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers
摘要： This paper presents the results of experimental studies of spectral, dark current–voltage and light load characteristics of the selenide–copper–gallium–indium (Cu(In, Ga)Se2) solar cell. Тhe main fundamental parameters of the photoactive semiconductor layer Cu(In, Ga)Se2, such as the band gap, the resistivity of the layer, the equilibrium majority–carrier concentration, the lifetime and the product μ nτn of nonequilibrium minority carriers from the spectral, photoelectric and dark current–voltage characteristics are determined. Based on an analysis of the light-load current–voltage characteristics at various solar radiation powers (50–1000 W/m2), the main parameters of the p–n junction were determined, as well as the nonideality factor and the magnitude of the reverse diode saturation current; a photogeneration mechanism was established in the studied solar radiation range, which had the character of a diffusion mechanism, where carrier recombination in the photoactive layer did not have a significant effect. We found that in conditions of real solar lighting (Рrad = 50–1000 W/m2), the output parameters of the solar cell – short-circuit current, open circuit voltage, the maximum output power increases with Рrad. The fill factor (FF) of the light-current–voltage characteristics has a maximum at Рrad ≈ 200 W/m2, and an efficiency has a maximum value at Рrad ≈ 600 W/m2. The observed dependences of FF and efficiency are explained by the dependence of the series (Rser) and shunt (Rsh) resistance of a solar cell on Prad. To maintain the efficiency of a solar cell based on thin-film layers Cu(In, Ga)Se2, equally high in conditions of increased radiation, as well as in conditions of low solar radiation, it is necessary that Rser decreases and Rsh does not change with Prad.
关键词： photoactive thin film layer,series resistance,solar cell,Cu(In, Ga)Se2,fill factor,short circuit current,solar radiation power,light current–voltage characteristics,efficiency,open circuit voltage,shunt resistance
更新于2025-09-16 10:30:52
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A Random Polymer Donor for High-Performance Polymer Solar Cells with Efficiency Over 14%
摘要： Constructing random copolymers has been regarded as an easy and effective approach to design polymer donors for state-of-the-art polymer solar cells (PSCs). In this work, we develop a naphtho[2,3-c]thiophene-4,9-dione (NTDO) based copolymer PBN-Cl as a donor material for PSC, and a moderate power conversion efficiency (PCE) of 11.21% is achieved with a relatively low fill factor (FF) of 0.615. We then incorporate a similar acceptor unit benzo[1,2-c:4,5-c′]dithiophene-4,8-dione (BDD) into the polymeric backbone of PBN-Cl to tune its photovoltaic performance, and a significantly higher PCE of 14.05% is achieved from the random polymer PBN-Cl-B80 containing 80% BDD unit. The enhanced PCE of the PBN-Cl-B80-based device mainly relies on the higher FF value, resulting from the improved charge mobility properties, reduced bimolecular and trap-assisted recombination, and more appropriate phase separation. The results demonstrate a feasible strategy to tune the photovoltaic performance of polymer donors by constructing random polymer with a compatible component.
关键词： polymer solar cells,power conversion efficiency,random polymer,fill factor,charge-carrier mobility,polymer donor
更新于2025-09-16 10:30:52
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Wet chemical etching of cadmium telluride photovoltaics for enhanced open-circuit voltage, fill factor, and power conversion efficiency
摘要： Cadmium telluride (CdTe) is one of the leading photovoltaic technologies with a market share of around 5%. However, there still exist challenges to fabricate a rear contact for ef?cient transport of photogenerated holes. Here, etching effects of various iodine compounds including elemental iodine (I2), ammonium iodide (NH4I), mixture of elemental iodine and NH4I (I?/I3? etching), and formamidinium iodide were investigated. The treated CdTe surfaces were investigated using Raman spectroscopy, X-ray diffraction (XRD), scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The CdTe devices were completed with or without treatments and tested under simulated AM1.5G solar spectrum to ?nd photoconversion ef?ciency (PCE). Based on Raman spectra, XRD patterns, and surface morphology, it was shown that treatment with iodine compounds produced Te-rich surface on CdTe ?lms, and temperature-dependent current–voltage characteristics showed reduced back barrier heights, which are essential for the formation of ohmic contact and reduce contact resistance. Based on current–voltage characteristics, the treatment enhanced open-circuit voltage (VOC) up to 841 mV, ?ll factor (FF) up to 78.2%, and PCE up to 14.0% compared with standard untreated CdTe devices (VOC ; 814 mV, FF ; 74%, and PCE ; 12.7%) with copper/gold back contact.
关键词： open-circuit voltage,fill factor,Cadmium telluride,wet chemical etching,photovoltaics,power conversion efficiency
更新于2025-09-12 10:27:22
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A new approach to understanding the deficiency of backside illuminated dye-sensitized solar cells’ fill factor as a result of cracking of the TNAs
摘要： In this work, a new approach was taken to gain an insight into the deficiency of backside illuminated dye-sensitized solar cells’ fill factor as a result of cracking of the TNAs. In order to obtain cracked and non-cracked TNAs and compare their properties and performance in backside illuminated DSSCs, anodization was carried out respectively using pretreated Ti substrates covered with TiO2 nanoparticles and bare Ti substrates. To cover the Ti substrates with 20-30 nanometer-sized TiO2 nanoparticles, they were conventionally TiCl4 treated. The SEM images of the anodized TNAs approved the sever and wide cracking of the TNAs grown on TiCl4 treated Ti substrates compared to those of grown on bare Ti substrates. The reason for this phenomenon could be the accumulation and stacking of the nanoparticles among the bundles of the TNAs. It is approved by narrower peaks of the XRD patterns for TiCl4 treated TNAs and the observed stacks of nanoparticles in the intersectional SEM images. The anodized TNAs grown both on TiCl4 treated and bare Ti substrates were applied as photoanodes in backside illuminated DSSCs. All the photovoltaic parameters other than fill factor and the consequent efficiency obtained from both the grown TNAs on TiCl4 treated and bare Ti substrates were equal. Whereas, the fill factor and efficiency of the DSSCs using cracked TNAs (grown on TiCl4 treated Ti substrates) were approximately 9% lower. This deficiency of the DSSCs is attributed to the presence of the nanoparticles and cracking of the TNAs which result in an increase of series resistance in the cell.
关键词： TiCl4 treatment,TiO2 nanotube arrays,Fill factor,Backside illuminated DSSCs
更新于2025-09-12 10:27:22
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Afterglow Effects as a Tool to Screen Emissive Non-Geminate Charge Recombination Processes in Organic Photovoltaic Composites
摘要： Disentangling temporally-overlapping charge carrier recombination events in organic bulk heterojunctions by optical spectroscopy is challenging. Here, a new methodology for employing delayed luminescence spectroscopy is presented. The proposed method is capable of distinguishing between recombination of spatially-separated charge carriers and trap-assisted charge recombination simply by monitoring the delayed luminescence (afterglow) of bulk heterojunctions with a quasi time-integrated detection scheme. Applied on the model composite of the donor poly(6,12-dihydro-6,6,12,12-tetraoctyl-indeno[1,2-b]fluorene-alt-benzothiadiazole) (PIF8BT) polymer and the acceptor ethyl-propyl perylene diimide (PDI) derivative, i.e. PIF8BT:PDI, the luminescence of charge-transfer (CT) states created by non-geminate charge recombination on the ns – μs time scale is observed. Fluence-dependent, quasi time-integrated detection of the CT luminescence monitors exclusively emissive charge recombination events, while rejecting the contribution of other early-time emissive processes. Trap-assisted and bimolecular charge recombination channels are identified based on their distinct dependence on fluence. The importance of the two recombination channels is correlated with the layer’s order and electrical properties of the corresponding devices. Four different microstructures of the PIF8BT:PDI composite obtained by thermal annealing are investigated. Thermal annealing of PIF8BT:PDI shrinks the PDI domains in parallel with the growth of the PIF8BT domains in the blend. Common to all states studied, the delayed CT luminescence signal is dominated by trap-assisted recombination. Yet, the minor fraction of fully-separated charge recombination in the overall CT emission increases as the difference in the size of the donor and acceptor domains in the PIF8BT:PDI blend becomes larger. Electric field-induced quenching measurements on complete PIF8BT:PDI devices confirm quantitatively the dominance of emissive trap-limited charge recombination and demonstrate that only 40% of the PIF8BT/PDI CT luminescence comes from the recombination of fully-separated charges, taking place within 200 ns after photoexcitation. The method is applicable to other non-fullerene acceptor blends beyond the system discussed here, if their CT state luminescence can be monitored.
关键词： multiple-diode equivalent circuit,fill factor,solar cell,charge trapping,perylene diimides,non-fullerene acceptors,delayed luminescence,photodetector
更新于2025-09-12 10:27:22
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How to Report Record Open‐Circuit Voltages in Lead‐Halide Perovskite Solar Cells
摘要： Open-circuit voltages of lead-halide perovskite solar cells are improving rapidly and are approaching the thermodynamic limit. Since many different perovskite compositions with different bandgap energies are actively being investigated, it is not straightforward to compare the open-circuit voltages between these devices as long as a consistent method of referencing is missing. For the purpose of comparing open-circuit voltages and identifying outstanding values, it is imperative to use a unique, generally accepted way of calculating the thermodynamic limit, which is currently not the case. Here a meta-analysis of methods to determine the bandgap and a radiative limit for open-circuit voltage is presented. The differences between the methods are analyzed and an easily applicable approach based on the solar cell quantum efficiency as a general reference is proposed.
关键词： bandgap,nonradiative voltage losses,Shockley–Queisser model,fill factor losses,photovoltaics,radiative limit,recombination
更新于2025-09-12 10:27:22
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[IEEE 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Dhaka, Bangladesh (2019.5.3-2019.5.5)] 2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) - Design and Optimization of AlGaAs/InP Multi-junction Solar Cell
摘要： A structure for AlxGa1-xAs/InP multi-junction solar cell is proposed by using numerical simulation and the simulation is done with the help of Analysis of Microelectronic and Photonic Structures (AMPS-1D) simulator. The thickness of p-layer of AlxGa1-xAs top cell is varied from 20 nm to 150 nm keeping the n-layer thickness at a constant value of 800 nm. The thickness of n-layer of InP bottom cell is varied from 100 nm to 7000 nm and p-layer thickness is fixed at 200 nm. The band gap of AlxGa1-xAs top cell absorber layer is varied from 1.42 eV to 1.79 eV. The highest power conversion efficiency (PCE) obtained is 35.643% (Voc=2.385 V, Jsc = 15.789 mA/cm2, FF = 0.88). The operating temperature is also varied from 0 °C to 70 °C. We observed that with the increase in operating temperature, the normalized open circuit voltage decreased almost linearly which shows better stability of this proposed multi-junction solar cell.
关键词： AlGaAs/InP,AMPS-1D simulation,thermal stability,power conversion efficiency (PCE),fill factor (FF)
更新于2025-09-12 10:27:22
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Realtime monitoring on the HIT photovoltaic module characteristic parameters at STC, high and low irradiance conditions in Algeria
摘要： This paper deals with the study on 233 Wp HIT PV module characteristics that defines its performance and operation. The chosen HIT PV module is exposed to outdoor conditions at Saida City of Algeria. The module is tested in high irradiance and low irradiance situations that were recorded over a specific year. Based on the monitored data in these two situations, its performance characteristics were evaluated and compared with standard test condition parameters. From the results it is observed that, irradiance variation effects the HIT PV module characteristics. The variation in maximum power extracted, efficiency, and fill factor were observed. Apart from this weather parameters like ambient temperature, module temperature, wind speed, and relative humidity had also influenced the performance characteristics of HIT PV module.
关键词： fill factor,HIT PV module,PV monitoring,outdoor characteristics,Photovoltaics,PV efficiency,high, low and STC irradiance
更新于2025-09-12 10:27:22
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AIP Conference Proceedings [AIP Publishing 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Fes, Morocco (25–27 March 2019)] 15th International Conference on Concentrator Photovoltaic Systems (CPV-15) - Impact of the thermal budget of the emitter formation on the pFF of PERC+ solar cells
摘要： We develop processes for advanced phosphorus doping profiles in order to reduce the emitter saturation current density Jo,e of industrial bifacial PERC+ solar cells. With an in-situ oxidation, which takes place in the POCl3 furnace in between the deposition and the drive-in step, the surface concentration was lowered from 3 × 1020 cm-3 to 1.7 × 1020 cm-3. With an additional ex-situ oxidation, which takes place after the phosphorus silicate glass is removed, the phosphorus surface concentration was further reduced to 3 × 1019 cm- 3. The decreased phosphorus surface concentration drastically reduces Jo,e from 106 fA/cm2 down to 22 fA/cm2. The reduced Jo,e increases the implied open circuit voltage up to 712 mV of unmetallized PERC+ test structures and the Voc of PERC+ solar cells up to 678 mV and efficiencies up to 21.8%. However, our solar cell analysis reveals for the first time, that with increasing thermal budget of the applied POCl3 and oxidation recipes the pseudo fill factor (pFF) decreases by up to 1.5%. This corresponds to an efficiency loss of approximately 0.5%abs. We analyse the pFF loss based on different lifetime test structures representing the emitter or the bulk of the PERC+ solar cell. From the lifetime measurements we calculate I-V curves representing the implied fill factor (iFF) of the different parts of the PERC+ solar cell as well as a combined one for the whole cell, which compares well to the measured pFF. The iFF values clearly show that the pFF is mainly limited by wafer bulk material. However, also the iFF values of the emitter slightly decrease with increasing thermal budget.
关键词： in-situ oxidation,phosphorus doping profiles,pseudo fill factor,ex-situ oxidation,emitter saturation current density,PERC+ solar cells,thermal budget
更新于2025-09-12 10:27:22