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Characterisation of AlN nano thin films prepared by PLD
摘要： Aluminium nitride (AlN) nano thin films have been prepared by pulsed laser deposition (PLD) in this paper. The microstructure and grain size of the nano thin films were characterised by scanning electron microscopy (SEM) and X-ray diffraction (XRD). The results showed that the PLD conditions such as laser fluence, ambient pressure and substrate temperature influence the thickness, morphology and grain size of the nano thin films obviously, i.e. the surface of the nano thin films becomes rough while the grain size increases with increasing the laser fluence, ambient pressure and substrate temperature. In addition, there exists a preferred orientation growth in the thin films.
关键词： microstructure,pulsed laser deposition (PLD),aluminium nitride,grain size,Nano thin films
更新于2025-09-23 15:22:29
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Charge transfer processes and carrier dynamics at the pentacene - C60 interface
摘要： Heterostructures of pentacene (PEN) and Buckminsterfullerene (C60) are frequently attracting scientific interest as a well-defined small-molecule model-system for the study of internal interfaces between two organic semiconductors. They are prototypical representatives forming a donor-acceptor combination for studies of fundamental optoelectronic processes in organic photovoltaics. Despite their importance in exciton dissociation, the energetics of their interfacial charge-transfer (CT) states and their microscopic excitation dynamics are not yet clarified and still being discussed. Here, we present steady-state and time-resolved photoluminescence measurements on stacked heterostructures between these two materials. All experiments are performed in the visible and near-infrared spectral regions as CT states are expected at energies below the fundamental electronic transitions of the respective bulk materials. A characteristic, interface specific emission at around 1.13-1.17 eV is found, which we attribute to an interfacial CT state. Its excitation-energy dependence reveals the intricate relaxation dynamics of excitons formed in both constituent materials. Moreover, the analysis of the dynamics of the C60 excitons shows that the lifetime of this state is reduced in the presence of an interface with PEN. This quenching is attributed to a long-range interaction, i.e., the relaxation of excitations into the interfacial CT state.
关键词： organic heterostructures,charge-transfer exciton,light harvesting,donor-acceptor pair,Organic thin films,pentacene,fullerene
更新于2025-09-23 15:22:29
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Investigation of optical and electrical properties of lithium doped ZnO nano films
摘要： Investigation of undoped and lithium doped ZnO nano films deposited on glass substrates by sol-gel spin coating method have been carried out. The structural and morphological properties of the films with optimum post annealing temperature of 350°C have been investigated using X-ray Diffractometer (XRD) and Field emission scanning electron microscopy (FESEM) respectively. The XRD spectrum reveals that all the synthesised samples have single crystal structure having strong intense peak oriented along (002) c-axis. Crystalline size of undoped and Li doped ZnO nano films were deduced to be 34.66 nm and 32.59 nm respectively. FESEM exhibits uniform chromosome type structure. Nano films show transmittance above 90 % in the range of wavelength 350 nm to 800 nm. I-V characteristic shows linear and ohmic behaviour.
关键词： sol-gel,Li doped ZnO,Nano films
更新于2025-09-23 15:22:29
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Deposition of ZnS thin films by electron beam evaporation technique, effect of thickness on the crystallographic and optical properties
摘要： Deposition of Zinc sulfide (ZnS) thin films on Si (100) and glass substrates has been performed using electron beam evaporation (EBE) method without annealing. Film structure has been analyzed by XRD, while SEM and AFM have been used to explore the films morphology. Raman spectroscopy has been used to confirm film composition. The stoichiometry has been verified by EDX and XPS techniques. XRD patterns indicated that the films possess a polycrystalline cubic structure with orientations along (111) and (220) planes. The crystallinity has been better with film thickness in the 350–1700 nm range while the RMS roughness increases. Optical properties of the grown films were characterized by optical transmittance measurements (UV–Vis). The deduced energy band gap of the films shows a clear reduction from 3.45 eV to 3.36 eV with increasing film thickness. The evolution of refractive index, extinction coefficient, and dielectric constants with thickness has been investigated from transmittance spectra in the 500–1000 nm wavelength range.
关键词： ZnS,optical characteristics,Thin films,electron beam evaporation
更新于2025-09-23 15:22:29
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[IEEE 2018 China International SAR Symposium (CISS) - Shanghai (2018.10.10-2018.10.12)] 2018 China International SAR Symposium (CISS) - Imaging and Detection of Moving Targetsbased on Spaceborne Video SAR Mode
摘要： Yttrium fluoride (YF3) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF3 film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF3 structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF3 films. HRTEM analysis also revealed that the YF3 films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF3 film than on Al2O3 plate. These results showed that the YF3 films have excellent erosion resistance properties compared to Al2O3 plates.
关键词： yttrium fluoride,plasma processing equipment,films
更新于2025-09-23 15:22:29
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Influence of thickness on the optical properties of Sb doped ZnO thin films
摘要： Sb doped ZnO thin films having various thicknesses have been prepared onto glass substrate by using thermal evaporation method. The atomic compositions of the grown films have been determined by Energy Dispersive Analysis of X-ray (EDAX) method. The optical properties were measured by using a UV-VIS-NIR spectrophotometer (300 to 2500 nm). The EDAX analysis revealed that Sb is doped into the ZnO films. Optical properties showed high absorption coefficient (~105/cm) that direct allowed transition band gap. The optical band gap of the ZnO thin films became reduced due to the doping of Sb.
关键词： Composition,Sb doped ZnO thin films,Optical properties,Thickness
更新于2025-09-23 15:22:29
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Crystallisation Phenomena of In2O3:H Films
摘要： The crystallisation of sputter-deposited, amorphous In2O3:H films was investigated. The influence of deposition and crystallisation parameters onto crystallinity and electron hall mobility was explored. Significant precipitation of metallic indium was discovered in the crystallised films by electron energy loss spectroscopy. Melting of metallic indium at ~160 °C was suggested to promote primary crystallisation of the amorphous In2O3:H films. The presence of hydroxyl was ascribed to be responsible for the recrystallization and grain growth accompanying the inter-grain In-O-In bounding. Metallic indium was suggested to provide an excess of free electrons in as-deposited In2O3 and In2O3:H films. According to the ultraviolet photoelectron spectroscopy, the work function of In2O3:H increased during crystallisation from 4 eV to 4.4 eV, which corresponds to the oxidation process. Furthermore, transparency simultaneously increased in the infrared spectral region. Water was queried to oxidise metallic indium in UHV at higher temperature as compared to oxygen in ambient air. Secondary ion mass-spectroscopy results revealed that the former process takes place mostly within the top ~50 nm. The optical band gap of In2O3:H increased by about 0.2 eV during annealing, indicating a doping effect. This was considered as a likely intra-grain phenomenon caused by both (In0)O?? and (OH?)O? point defects. The inconsistencies in understanding of In2O3:H crystallisation, which existed in the literature so far, were considered and explained by the multiplicity and disequilibrium of the processes running simultaneously.
关键词： high mobility,In2O3:H,thin films,TCO,crystallisation
更新于2025-09-23 15:22:29
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Uniform Sb <sub/>2</sub> S <sub/>3</sub> optical coatings by chemical spray method
摘要： Antimony sulfide (Sb2S3), an environmentally benign material, has been prepared by various deposition methods for use as a solar absorber due to its direct band gap of ≈1.7 eV and high absorption coefficient in the visible light spectrum (1.8 × 105 cm?1 at 450 nm). Rapid, scalable, economically viable and controllable in-air growth of continuous, uniform, polycrystalline Sb2S3 absorber layers has not yet been accomplished. This could be achieved with chemical spray pyrolysis, a robust chemical method for deposition of thin films. We applied a two-stage process to produce continuous Sb2S3 optical coatings with uniform thickness. First, amorphous Sb2S3 layers, likely forming by 3D Volmer–Weber island growth through a molten phase reaction between SbCl3 and SC(NH2)2, were deposited in air on a glass/ITO/TiO2 substrate by ultrasonic spraying of methanolic Sb/S 1:3 molar ratio solution at 200–210 °C. Second, we produced polycrystalline uniform films of Sb2S3 (Eg 1.8 eV) with a post-deposition thermal treatment of amorphous Sb2S3 layers in vacuum at 170 °C, <4 × 10?6 Torr for 5 minutes. The effects of the deposition temperature, the precursor molar ratio and the thermal treatment temperature on the Sb2S3 layers were investigated using Raman spectroscopy, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and UV–vis–NIR spectroscopy. We demonstrated that Sb2S3 optical coatings with controllable structure, morphology and optical properties can be deposited by ultrasonic spray pyrolysis in air by tuning of the deposition temperature, the Sb/S precursor molar ratio in the spray solution, and the post-deposition treatment temperature.
关键词： vacuum annealing,Volmer–Weber growth,antimony sulfide,thin films,ultrasonic spray
更新于2025-09-23 15:22:29
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Synthesis and characterization of spin-coated clay/PVDF thin films
摘要： This paper reports the fabrication of Cloisite-15A (C-15A)-dispersed polyvinylidene fluoride (PVDF) nanocomposite thin films by spin coating and their characterization for sensor applications. The effects of nanoclay, duration of ultrasonication and spinning speed on the morphology and properties of thin films were studied. The influence of these parameters on the amount of β-phase was analysed using Fourier transform infrared (FTIR) and X-ray diffraction (XRD) techniques. The influence of C-15A on the morphology and surface quality of thin films was analysed by scanning electron microscopy (SEM). Piezoelectric coefficient was measured at 110 Hz and 0.25 N. Contact angle was measured to assess the hydrophobicity of thin films. The β-phase of 82.97% was obtained in the specimens with 5 wt% C-15A, processed at 500 rpm and spun for 35 min. The piezoelectricity of the specimens increased from ?18 to ?25 pC N?1. Experiments were conducted as per L16 orthogonal array.
关键词： spin coating,Cloisite-15A,β-crystals,PVDF/clay thin films,piezoelectricity
更新于2025-09-23 15:22:29
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Conductive Fused Porphyrin Tapes on Sensitive Substrates by a Chemical Vapor Deposition Approach
摘要： Oxidative polymerization of nickel(II) 5,15-diphenyl porphyrin and nickel(II) 5,15-bis(di-3,5-tert-butylphenyl) porphyrin by an oxidative chemical vapor deposition (oCVD) approach yields multiply fused porphyrin oligomers in thin film form. The oCVD technique enables the formation, deposition and p-doping of conjugated poly(porphyrins) coatings in a single step without the use of solvents or post-treatments. The decisive reactions and side reactions during the oCVD process are evidenced by high-resolution mass spectrometry. Due to the highly conjugated structure of the fused porphyrin tapes the thin films exhibit an electrical conductivity of 3.6×10–2 S·cm–1 and strong absorption in the visible to near-infrared spectral region. The formation of smooth conjugated poly(porphyrins) thin films, even on sensitive substrates, is demonstrated by their successful deposition and patterning on glass, silicon and printer paper. The ability to form conductive poly(porphyrins) thin films could enable the design of a new category of optoelectronic devices using the oCVD approach.
关键词： Chemical Vapor Deposition,Polymerization,Oxidative Coupling,Porphyrins,Thin Films
更新于2025-09-23 15:22:29