- 标题
- 摘要
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- 实验方案
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Optical memory characteristics of solution-processed organic transistors with self-organized organic floating gates for printable multi-level storage devices
摘要： Exploring optical memory functions in nonvolatile organic field-effect transistor (OFET) memories with top-gate/bottom-contact (TG/BC) configurations can offer effective routes for developing printable, high-density organic memory circuits capable of multi-level data storage. Here, we use a solution process to fabricate TG/BC OFET devices with organic floating-gate structures and investigate their memory characteristics under light illumination. A solution-processable organic composite of 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and poly(methylmethacrylate) is employed to self-organize organic floating-gate structures on a solution-processed semiconductor layer composed of poly(3-hexylthiophene) (P3HT). The floating-gate OFET devices programmed with blue, green, and red light exhibit large threshold voltage (Vth) shifts of approximately 30 V and stable charge retention characteristics even under light illumination. The devices also exhibit high sensitivity to incident light during programming, and the degree of Vth shift and the on-state current can be tuned using light and programming voltage to facilitate distinct storage and readout of multi-level data.
关键词： floating-gate memory,organic field-effect transistor,top-gate/bottom-contact configuration,multi-level data storage,solution-processable organic material
更新于2025-09-23 15:23:52
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[IEEE 2017 IEEE International Integrated Reliability Workshop (IIRW) - Fallen Leaf Lake, CA (2017.10.8-2017.10.12)] 2017 IEEE International Integrated Reliability Workshop (IIRW) - Silicon dioxide degradation in strongly non-uniform electric field
摘要： The new experimental evidence of field-induced trap generation in the tunnel oxide of SuperFlash? memory cells has been presented. It was shown that the negative voltage stress generates the highest local electric field in the oxide close to the floating gate tip. The effect of electric stress on the degradation of tunneling characteristics has been studied for the cells with the different tunneling geometry. The reliability aspects of field-induced trap generation are discussed. It has been concluded that the analyzed degradation mechanism is not critical for the SuperFlash technology.
关键词： floating gate,program-erase cycling endurance,memory reliability,oxide degradation,electron tunneling,Flash memory,electron trapping
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - Kuala Lumpur (2018.8.15-2018.8.17)] 2018 IEEE International Conference on Semiconductor Electronics (ICSE) - A Compact Bidirectional Pseudo Floating Gate Front-End for Resonating Sensors based on NAND and NOR logic Gates
摘要： In this paper we present an alternative method to realize a compact bidirectional Front-End for resonating sensors based on Ring Down Method (RDM) and pseudo floating gate amplifier (PFGA). This goal is achieved by using the voltage buffer inside the PFGA for both biasing of the amplifier and actuation of the sensor. The proposed analog front-end doesn't require any coupling capacitor, minimizing the area occupied by the circuit. Simulations in AMS-350nm CMOS technology with a power supply of 3.3V and measurements on a prototype implemented with discrete components have been used to verify the correct operation of the system. The Front-end was realized by using the integrated circuits (ICs) CD4007UBE and ALD1103, and tested with a real piezoelectric transducer (MURATA MA40S4R), characterized by a resonant frequency of 40kHz. Measurement and simulation results show that the proposed circuit is a good candidate to realize a compact and bidirectional pseudo floating gate front-end, which resembles the circuit of NAND and NOR logic gates.
关键词： Front-End,Resonating Sensor,Bidirectional,Pseudo Floating Gate Amplifier
更新于2025-09-23 15:22:29
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[IEEE 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) - Gdynia, Poland (2018.6.21-2018.6.23)] 2018 25th International Conference "Mixed Design of Integrated Circuits and System" (MIXDES) - A Discrete Implementation of a Semi-Floating Gate Amplifier for Resonating Sensor Front-End
摘要： The growing need of electronic sensors and transducers in modern and portable applications requires to research new design methods, which aim to lower the power consumption and reduce the occupied area of the sensor interface circuitry. In this work we present the implementation of a semi-floating gate amplifier (SFGA) to realize a compact and low power resonating sensor front-end. The prototype has been fabricated by using the commercial integrated circuit CD4007UBE and tested with a power supply of 3.3V. Measurement results show that the main trade-off of this circuit is between gain and bandwidth. The maximum values recorded for these two parameters are: 150V/V and 2MHz respectively. The circuit has been tested with an input sinusoidal signal and then connected to a Butterworth Van Dike (BvD) load. This type of load is commonly used to mimic the behavior of a real resonating transducer. The average current absorbed by the amplifier during the normal operation is 6μA leading to a static power consumption of 19.8μW . These values refer to a read-out frequency of 100Hz.
关键词： Resonating Sensor,Front-End,CD4007UBE,Semi-Floating Gate,Amplifier
更新于2025-09-23 15:22:29
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Non-volatile Organic Transistor Memory based on Black Phosphorus Quantum dots as Charge Trapping Layer
摘要： High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 oC). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 103 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 104 over 10,000 sec by introducing PMMA as the tunneling layer.
关键词： floating gate transistor,organic memory,solution-processed,Black phosphorus,quantum dots
更新于2025-09-23 15:21:01
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Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer
摘要： Floating-gate based organic ?eld-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular ?oating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the ?oating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated ?oating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of 640 V, at an optimized condition.
关键词： organic transistor,nonvolatile memory,fullerene,tunneling layer,molecular floating-gate,tetratetracontane
更新于2025-09-04 15:30:14