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[IEEE 2019 IEEE Photonics Conference (IPC) - San Antonio, TX, USA (2019.9.29-2019.10.3)] 2019 IEEE Photonics Conference (IPC) - Frequency Noise Reduction of Quantum Cascade Lasers using Optical Feedback
摘要： We theoretically demonstrate that strong optical feedback can reduce the frequency noise of quantum cascade lasers by two orders of magnitude, which is almost independent on the feedback phase. In addition, the spectral linewidth of the laser with optical feedback is analytically derived.
关键词： frequency noise,quantum cascade laser,optical feedback,spectral linewidth
更新于2025-09-11 14:15:04
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Effect of a Low-Frequency Noise Signal on the Supply Circuit of the Millimeter-Band Generator of Single-Frequency and Chaotic Oscillations Designed on an Avalanche Transit-Time Diode
摘要： The effect of a low-frequency noise signal on the supply circuit of a millimeter-band generator of single-frequency and chaotic oscillations designed on an avalanche transit-time diode has been experimentally investigated. Generation of noise oscillations under the action of a low-frequency narrowband (~3 MHz) noise signal on the supply circuit of an avalanche transit-time diode in a single-frequency self-oscillator based on a 7-millimeter-wave avalanche transit-time diode has been obtained for the first time and the possibility of control of the spectral characteristic of a 8-millimeter-band noise generator on an avalanche transit-time diode using such an impact has been demonstrated.
关键词： single-frequency oscillations,avalanche transit-time diode,millimeter-band generator,low-frequency noise signal,chaotic oscillations
更新于2025-09-10 09:29:36
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Low-frequency noise in irradiated graphene FETs
摘要： We present a quantitative analysis of the low-frequency noise in irradiated monolayer graphene. In this study, we repeatedly irradiate a back-gated graphene transistor with argon ions at 90 eV and measure its low-frequency noise and channel conductivity after each irradiation. Our results indicate that the noise amplitude decreases monotonically with the increasing density of vacancy defects. The combination of our low-frequency noise measurements and carrier transport studies reveals that the mobility fluctuation model can explain this observation and that the density of vacancy defects, the density of charged impurities, and the mean free path of charge carriers determine the noise amplitude.
关键词： mobility fluctuation model,low-frequency noise,charged impurities,irradiated graphene,vacancy defects,mean free path
更新于2025-09-10 09:29:36
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Coulomb scattering mechanism transition in 2D layered MoTe <sub/>2</sub> : effect of high- <i>κ</i> passivation and Schottky barrier height
摘要： Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-to-semiconductor Schottky barrier (SB), and ionic charges in the gate oxides, which often limits the understanding of the charge scattering mechanism in 2D electronic systems. Here, we present the effects of hafnium dioxide (HfO2) high-κ passivation and SB height on the low-frequency (LF) noise characteristics of multilayer molybdenum ditelluride (MoTe2) transistors. The passivated HfO2 passivation layer significantly suppresses the surface reaction and enhances dielectric screening effect, resulting in an excess electron n-doping, zero hysteresis, and substantial improvement in carrier mobility. After the high-κ HfO2 passivation, the obtained LF noise data appropriately demonstrates the transition of the Coulomb scattering mechanism from the SB contact to the channel, revealing the significant SB noise contribution to the 1/f noise. The substantial excess LF noise in the subthreshold regime is mainly attributed to the excess metal-to-MoTe2 SB noise and is fully eliminated at the high drain bias regime. This study provides a clear insight into the origin of electronic signal perturbation in 2D electronic systems.
关键词： Coulomb screening,low-frequency noise,Schottky barrier height,molybdenum ditelluride,high-κ passivation
更新于2025-09-10 09:29:36
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Total-Ionizing-Dose Response of MoS2 Transistors with ZrO2 and h-BN Gate Dielectrics
摘要： The total-ionizing-dose response of few-layer MoS2 transistors with ZrO2 or h-BN gate dielectrics is investigated under various bias conditions. Defects in MoS2 and surrounding dielectric layers significantly affect radiation-induced trapping. For devices with ZrO2 dielectrics, much larger negative Vth shifts and peak transconductance degradation are observed for irradiation under negative and ground bias than under positive bias. h-BN devices exhibit positive threshold voltage shifts under negative-bias irradiation. For both ZrO2 and h-BN passivated devices, the peak transconductance degradation results from charge trapping at the surface of the MoS2 or in nearby oxides. Changes in defect energy distributions of MoS2 FETs during X-ray irradiation are characterized via temperature-dependent low-frequency noise measurements. Density functional theory calculations are performed to provide insight into the pertinent defects.
关键词： DFT,MoS2 FET,low frequency noise,ZrO2,h-BN,2 dimension,X-ray
更新于2025-09-04 15:30:14