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[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - Design of a High-Frequency Dual-Active Bridge Converter with GaN Devices for an Output Power of 3.7 kW
摘要： In the automotive industry weight and volume are important issues to design power electronics besides costs. With the upcoming of wide band-gap devices like Gallium Nitride (GaN) devices high switching frequencies become a potential for converters. Operating at high switching frequencies reduces the volume of passive components e.g., transformer significantly. Auxiliary supplies or on-board charging systems for electric vehicles are typical areas of application for a reduction of volume and weight. For this kind of application dc-dc converters like a Dual Active Bridge converter can be used. This paper describes a detailed electrical analysis of a compact single phase Dual Active Bridge converter operated at a high switching frequency of 500 kHz at a dc voltage of 400 V on both full bridges to achieve a power transfer of 3.7 kW. In this paper it is shown how a fast switching and compact dual active bridge converter is designed that operates with a high efficiency of about 96% at nominal power.
关键词： Gallium Nitride (GaN) devices,Dual Active Bridge converter,electric vehicles,power electronics,high switching frequencies
更新于2025-09-09 09:28:46
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The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors
摘要： Almost complete suppression of dynamic ON-resistance in AlGaN/GaN high-electron-mobility transistors is obtained by proton irradiation. In this paper, both small and large power transistors are characterized before and after 3-MeV proton irradiation at different fluences. The irradiated devices show a high robustness and for specific fluences unaltered threshold voltage and static ON-resistance. However, for fluences higher than 1013 cm?2, the dynamic ON-resistance is almost completely suppressed at 600 V and T = 150 °C. After irradiation, a measurable increase in OFF-state leakage current is observed, indicating an increase in the unintentionally doped (UID) GaN layer conductivity. We propose a technology computer-aided design supported model in which this conductivity increase leads to an increased deionization rate, ultimately reducing the dynamic ON-resistance.
关键词： high-electron-mobility transistor (HEMT),proton irradiation,Gallium nitride (GaN),dynamic ON-resistance
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - Portland, OR, USA (2018.9.23-2018.9.27)] 2018 IEEE Energy Conversion Congress and Exposition (ECCE) - 10 kW High Efficiency Compact GaN-Based DC/DC Converter Design
摘要： Gallium-nitride high-electron-mobility transistors (HEMTs) have shown their distinct advantages over silicon devices in the power converter design, including high switching speed, no reverse recovery loss, high switching frequency and compact package. This helps to build a high-efficiency and high-power-density 10 kW LLC resonant converter. A switching cell with two paralleled 650V 60A enhanced-mode GaN HEMTs are proposed including layout consideration and thermal management. The switching cell is adopted at the primary and secondary side separately in the converter. An integrated high frequency litz-wire transformer is presented with its optimization process. With the 3D package of the converter structure using the GaN-based switching cell and the litz-wire transformer, the converter achieves 97.9% peak efficiency under full power and 131 W/in3 (8 kW/L) power density.
关键词： Gallium nitride (GaN),litz wire,LLC resonant converter,transformer,DC/DC converter
更新于2025-09-04 15:30:14
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Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
摘要： Temperature-dependent threshold voltage (Vth) stability is a significant issue in the practical application of semi-conductor power devices, especially when they are undergoing a repeated high-temperature operation condition. The Vth analytical model and its stability are dependent on high-temperature operations in wide-bandgap gallium nitride (GaN)-based high electron mobility transistor (HEMT) devices that were investigated in this work. The temperature effects on the physical parameters—such as barrier height, conduction band, and polarization charge—were analysed to understand the mechanism of Vth stability. The Vth analytical model under high-temperature operation was then proposed and developed to study the measurement temperatures and repeated rounds dependent on Vth stability. The validity of the model was verified by comparing the theoretical calculation data with the experimental measurement and technology computer-aided design (TCAD) simulation results. This work provides an effective theoretical reference on the Vth stability of power devices in practical, high-temperature applications.
关键词： high-temperature operation,gallium nitride (GaN),analytical model,high electron mobility transistors (HEMTs),threshold voltage (Vth) stability
更新于2025-09-04 15:30:14