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Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts
摘要： The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f2 noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.
关键词： quantum point contacts,global top gate,charge noise,Si/SiGe,random telegraph noise
更新于2025-09-23 15:21:21
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[IEEE 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - Atlanta, GA, USA (2019.7.7-2019.7.12)] 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - A Unit-Cell Discontinuous Galerkin Scheme for Analyzing Plasmonic Photomixers
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： zinc oxide,dc switch,Cutoff frequency,pulse measurements,gate charge,monolithic ICs,RF switch,ionic semiconductors,thin-film transistors (TFTs)
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - Seoul, Korea (South) (2019.10.27-2019.11.2)] 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - A Neural Network for Detailed Human Depth Estimation From a Single Image
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： monolithic ICs,pulse measurements,zinc oxide,gate charge,dc switch,ionic semiconductors,RF switch,thin-film transistors (TFTs),Cutoff frequency
更新于2025-09-19 17:13:59
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide
摘要： The 1.2 kV-rated trench-gate SiC power MOSFET with thick trench bottom oxide is analyzed and compared with previous trench-gate SiC power MOSFET structures. Speci?c on-resistance (Ron,sp), breakdown voltage (BV), threshold voltage (VT H ), gate-drain capacitance (Cgd,sp) and gate charge (Qgd) were extracted using numerical simulations for trench bottom oxide thickness between 500 ?A and 8000 ?A. It was found that the electric ?eld in the trench bottom oxide was below 4 MV/cm for oxide thickness beyond 4000 ?A. An analytical model is proposed to allow estimation of the electric ?eld in the trench bottom oxide. The Ron,sp for the thick bottom oxide structure was 1.9 m? ? cm2 (at Vgs of 20 V), Cgd,sp (at Vds= 1000 V) was 417 pF/cm2 and Qgd,sp (at Vgs =20 V, Rg=10 ?, Vds=800V) was 671 nC/cm2, which is signi?cantly better than most planar-gate devices. This structure has superior speci?c on-resistance compared with previous trench-gate and planar-gate structures.
关键词： Silicon Carbide,reverse transfer capacitance,speci?c on-resistance,gate charge,trench bottom oxide,breakdown voltage,threshold voltage,Trench-gate MOSFET (UMOSFET)
更新于2025-09-04 15:30:14