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Steep Slope Silicon-On-Insulator Feedback Field-Effect Transistor: Design and Performance Analysis
摘要： Feedback ?eld-effect transistor (FBFET), an alternative switching device, has received attention due to its ideal steep switching feature. By utilizing the positive feedback phenomenon, the total amount of electrons and holes contributing to drain current is sharply surged. Although the device has conspicuous subthreshold slope (SS) properties, advanced research for structure and performance of it is lacking. In this paper, single-gated and spacer-less silicon-on-insulator (SOI) FBFET with extremely steep switching (～1 mV/decade) characteristic is studied in various aspects; SS attribute, performance variation of scaled FBFET, the impact of structural variation, the gate margin for the device layout, and the hysteresis window. The prospect of SOI FBFET as a future candidate for CMOS logic application is investigated in detail.
关键词： feedback ?eld-effect transistor (FBFET),gate switching and margin rate,silicon on insulator (SOI),Channel length variation
更新于2025-09-10 09:29:36
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Gate switching of ultrafast photoluminescence in graphene
摘要： The control of optical properties by electric means is the key to optoelectronic applications. For atomically thin two-dimensional (2D) materials, the natural advantage lies in that the carrier doping could be readily controlled through the electric gating effect, possibly affecting the optical properties. Exploiting this advantage, here we report the gate switching of the ultrafast upconverted photoluminescence from monolayer graphene. The luminescence can be completely switched off by the Pauli-blocking of one-photon interband transition in graphene, with an on/off ratio exceeding 100 times, which is remarkable compared to other 2D semiconductors and 3D bulk counterparts. The chemical potential and pump fluence dependences of the luminescence are nicely described by a two-temperature model, including both the hot carrier dynamics and carrier-optical phonon interaction. This gate switchable and background-free photoluminescence can open up new opportunities for graphene-based ultrafast optoelectronic applications.
关键词： ultrafast photoluminescence,gate switching,hot carriers,graphene,optoelectronics,two-temperature model
更新于2025-09-09 09:28:46