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PH SENSITIVITY DEPENDENCY ON THE ANNEALING TEMPERATURE OF SPIN-COATED TITANIUM DIOXIDE THIN FILMS
摘要： Titanium dioxide (TiO2) thin films were fabricated on indium tin oxide (ITO) glass substrates using the spin coating technique and further were implemented as sensing membranes of the extended gate field effect transistor (EGFET) based pH sensor. The as-deposited thin films were annealed at different temperatures from 200 - 600 °C in room ambient for 20 min. The effects of different annealing temperatures on electrical and crystalline properties were analyzed by I-V two point probes measurement and X-ray diffraction respectively. Meanwhile, the surface morphology of thin films was observed by field emission scanning electron microscope (FESEM). We then measured the transfer characteristics (ID-VG) of the TiO2/ITO sensing membrane using a semiconductor parametric device analyzer for sensor characterization. It was found that, TiO2/ITO sensing membrane annealed at 300 °C achieved higher sensitivity and good linearity of 51.48 mV/pH and 0.99415, respectively in the pH buffer solutions of 4, 7, 10, and 12. Thin film annealed at 300 °C gives higher conductivity thin film of 384.62 S/m. We found that the conductivity of TiO2/ITO thin films was proportional with the sensitivity of sensing membrane.
关键词： titanium dioxide,Annealing temperature,sol-gel spin coating,extended gate field effect transistor
更新于2025-09-04 15:30:14
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Structural, optical, and dielectric studies of LaFe1?xMoxO3 (x?=?0.0, 0.5) perovskite materials
摘要： The structural, optical, and dielectric properties of LaFe1?xMoxO3 (x = 0.0, 0.5) synthesized by the sol–gel method were investigated by X-ray diffraction (XRD), Raman scattering, and impedance spectroscopy. XRD analysis revealed that the x = 0.5 compound is single-phase and orthorhombic, with space group Pbnm, similar to the parent x = 0.0 compound but with larger lattice parameters and/or a larger unit-cell volume. The Raman scattering spectra revealed local lattice distortions in the x = 0.5 compound and spin–phonon coupling related to the magnetic transition (Néel) temperature. The impedance data were well fitted with an R(R1-CPE1)//(R2-CPE2) equivalent electrical circuit, demonstrating the contributions of both grains and grain boundaries. The temperature (300–500 K) and frequency (100 Hz–1 MHz) dependences of the dielectric properties showed that Mo substitution adversely affected the dielectric parameters.
关键词： X-ray diffraction,LaFe1?xMoxO3,impedance spectroscopy,Raman scattering,sol–gel method,dielectric properties
更新于2025-09-04 15:30:14