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- 实验方案
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A monitoring device made of an anodic aluminum oxide template for plasma-induced charging potential measurements in the high-aspect-ratio trench structure
摘要： A monitoring device is proposed to investigate the charge accumulation effects in a high-aspect-ratio trench structure. This monitoring device is made of an anodic aluminum oxide (AAO) template, which is a self-organized material with parallel pores, to demonstrate a high aspect ratio trench structure. A top electrode and bottom electrode were formed in the AAO contact structure for measuring electric potentials. These electrodes can be assumed to be electrically floating due to the very high input resistance of the measurement circuit. Therefore, the electric potentials resulting from the charge accumulation can be measured. In this paper, the fabrication process of the proposed device and experimental demonstrations are presented.
关键词： high-aspect-ratio trench structure,charge accumulation,monitoring device,anodic aluminum oxide,plasma-induced charging potential
更新于2025-09-09 09:28:46
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[IEEE 2018 7th Electronic System-Integration Technology Conference (ESTC) - Dresden, Germany (2018.9.18-2018.9.21)] 2018 7th Electronic System-Integration Technology Conference (ESTC) - High-Q 3D-IPD Diplexer with High Aspect Ratio Cu Pillar Inductor
摘要： In this paper, a high quality factor 3D-inductor has been demonstrated by 3D-IPD solution with tall Cu pillar. It can achieve ~7:1 aspect ratio vertical connection without expensive TSV or TGV process, and meet the demand of high quality value wafer level process. A maximum quality factor of 60-80 has been achieved for 3D inductors in this study. Moreover, the proposed structure has been adopted to RF diplexer design with 1.0mm*0.5mm size for WiFi applications. The result shows a great performance improvement of lower insertion loss (0.31dB and 0.70dB) and larger attenuation (28dB and 26dB) than 2D-IPD diplexer. Based on the measurement result, the proposed high aspect ratio tall Cu pillar technology has been verified on RF inductors and IPD diplexer, demonstrates good performance, and is a significant promise for commercial wireless radio system.
关键词： IPD,High aspect-ratio,3D inductor,TGV-less,Tall copper pillar
更新于2025-09-09 09:28:46
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Uniform Metal-Assisted Chemical Etching for Ultra-High-Aspect-Ratio Microstructures on Silicon
摘要： Recently, uniform metal-assisted chemical etching (UMaCE) has been demonstrated as an effective wet etch method for fabrication of deep trenches and holes on silicon (Si). However, attempts to achieve higher aspect ratio by UMaCE was not successful because etching in random directions was observed. In this paper, the etching uniformity in UMaCE is systematically studied at different etching solution composition and catalyst configuration. The surface chemistry evolution of Si during etching is characterized by X-ray photoelectron spectroscopy, water contact angle, and electrical impedance spectroscopy. Based on the data, the reaction kinetics is analyzed, which shows that an electropolishing-type charge transport and a higher amount of oxide species on Si surface help mitigate the random etching behavior and effectively promote the aspect ratio of the etching with uniformity. Under the rationalized condition, uniform trenches with width of 2 μm and aspect ratio of 120:1 is successfully fabricated by UMaCE.
关键词： Metal-assisted chemical etching,silicon wet etch,high aspect ratio.
更新于2025-09-04 15:30:14