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[IEEE 2019 IEEE Pulsed Power & Plasma Science (PPPS) - Orlando, FL, USA (2019.6.23-2019.6.29)] 2019 IEEE Pulsed Power & Plasma Science (PPPS) - 2D Simulations of the NS-Laser Shock Peening
摘要： We report on the impact of H2 high-pressure annealing (HPA) onto In0.7Ga0.3As MOSCAPs and quantum-well (QW) MOSFETs with Al2O3/HfO2 gate-stack. After HPA with process condition of 300 °C, H2 ambient and pressure of 20 atm, we observed notable improvements of the capacitance–voltage (CV) characteristics in InGaAs MOSCAPs with Al2O3/HfO2 gate-stack, such as reduction of equivalent-oxide-thickness and less frequency dispersion in the accumulation region. There was 20% improvement of the interfacial trap density ( Dit). Then, we incorporated the HPA process into the fabrication of sub-100-nm In0.7Ga0.3As QW MOSFETs, to investigate the impact of HPA process. After HPA process, the device with L g = 50 nm exhibits improved subthreshold-swing (SS) = 105 mV/decade, in comparison with SS = 130 mV/decade for the reference device without HPA process. Finally, we carried out reliability assessment under a constant-voltage-stress (CVS), and it turns out that the HPA process was effective in mitigating a shift of threshold voltage ((cid:2)VT ) during the CVS. These are attributed to the effective passivation of oxide traps in the high-k dielectric layer and interfacial traps, after HPA process in the H2 ambient.
关键词： interfacial trap density (Dit),subthreshold-swing (SS),high-pressure annealing,atomic layer deposition (ALD),InGaAs MOSFET
更新于2025-09-19 17:13:59
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Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing
摘要： HfZrOx exhibiting ferroelectricity in ultra-thin layers can be deposited in various ways. Specifically, in sputtered HZO layers, only weak ferroelectric switching with gradual transition and small remnant polarization (Pr) is demonstrated using conventional rapid thermal annealing at high temperatures of at least 750 oC. Here we show that rapidly transited ferroelectric switching with a larger 2 Pr of 24 μC/cm2 is achieved by introducing a high pressure annealing (HPA) at even lower temperature of 550 oC. Our findings reveal that the HPA enhances the crystallinity of grains in the HZO, thereby enlarging the Pr and strengthening breakdown conditions. Through short pulse techniques, how interface and bulk region in the HZO are involved in the switching depending on the HPA is also investigated.
关键词： HfZrOx,Ferroelectric switching,high pressure annealing
更新于2025-09-16 10:30:52