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Modifying the nanostructures of PEDOT:PSS/Ti3C2TX composite hole transport layers for highly efficient polymer solar cells
摘要： Two-dimensional (2D) transition metal carbides MXene, typically represented by Ti3C2TX, have shown great promise in optoelectronic devices due to their metallic electrical conductivity, large surface area, superior hydrophilicity and excellent transparency. Herein, to improve the conductivity of polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) film, we incorporate solution-processable 2D Ti3C2Tx nanosheets into PEDOT:PSS to fabricate PEDOT:PSS/Ti3C2TX composite layers, and polymer solar cells (PSCs) with PEDOT:PSS/Ti3C2TX composite films as hole transport layers (HTLs) are fabricated for the first time. The nanostructures and the corresponding hole injection properties of PEDOT:PSS/Ti3C2TX composite layers are systematically evaluated. Based on the non-fullerene PBDB-T:ITIC system, a power conversion efficiency (PCE) of 11.02% is obtained for the device with PEDOT:PSS/Ti3C2TX as HTL, which is improved by 13.5% than that of the control device with pure PEDOT:PSS as HTL (9.72%). When using the PM6:Y6 system as the active layer, the PCE of the device based on PEDOT:PSS/Ti3C2TX is improved to 14.55% from 13.10% for the PEDOT:PSS reference device. 2D Ti3C2TX nanoflakes with higher conductivity constructing additional charge transfer pathways between the PEDOT nanocrystals and inducing conformational transition of PEDOT from a coil to a liner/expanded-coil structure, leading to the conductivity and device performance improvement. Interestingly, PEDOT:PSS/Ti3C2TX based devices also exhibit enhanced long-term stability than PEDOT:PSS based device. These results show that PEDOT:PSS/Ti3C2TX composite film has a promising prospect in high efficiency organic optoelectronics.
关键词： PEDOT:PSS/Ti3C2Tx composite film,hole injection property,improved conductivity,polymer solar cells,hole transport layer
更新于2025-09-19 17:13:59
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A “Positive Incentive” Approach to Enhance Operational Stability of Quantum Dot based Light-Emitting Diode
摘要： Balanced charge injection promises high efficiency of quantum dot based light-emitting diodes (QD-LEDs). Most widely used approach to realize charge injection balance is impeding the injection rate of the dominant charge carrier with energetic barriers. However, these approaches often accompany unwanted outcomes (e.g., the increase in operation voltage) that sacrifice the operation stability of devices. Herein, a “positive incentive” approach is proposed to enhance the efficiency and the operational stability of QD-LEDs. Specifically, the supply of hole, an inferior carrier than its counterpart, is facilitated by adopting a thin fullerene (C60) interlayer at the interface between hole injection layer (MoOX) and hole transport layer (CBP). The C60 interlayer boosts the hole current by eliminating the universal energy barrier, lowers the operation voltage of QD-LEDs, and enhances the charge balance in the QD emissive layer within working device. Consequently, QD-LEDs benefitting from the adoption of C60 interlayer exhibit significantly enhanced device efficiency and operation stability. Grounded on the quantitative assessment of the charge injection imbalance within the QD emissive layer, the impact of electrical parameters of QD-LEDs to their optoelectronic performance and operational stability is also discussed.
关键词： hole injection barrier,operational stability,fullerene,quantum dot based light-emitting diodes,charge injection balance
更新于2025-09-16 10:30:52
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Optimization of Hole Injection and Transport Layers for High-Performance Quantum-Dot Light-Emitting Diodes
摘要： High-luminance, e?cient quantum-dot light-emitting diodes (QLEDs) have been achieved by optimizing the balance between the hole injection layer (HIL) and the hole transport layer (HTL). Di?erent concentrations of vanadium oxide (V2O5) and poly[(9,9-dioctyl?uorenyl-2,7-diyl)-co-(4,4’-(4-sec-butylphenyl)diphenylamine)] (TFB) solutions were used to form the e?cient HIL and HTL, respectively, for the QLEDs. The hole injection and transport behavior was characterized by using hole-only devices (HODs). The QLEDs, which were prepared with 0.5 wt.% of V2O5 and 0.1 wt.% of TFB as HIL and HTL, respectively, showed a maximum current e?ciency of 2.27 cd·A?1 and a maximum luminance of 71,260 cd·m?2. Moreover, the turn-on voltage of the device was as low as 2.2 V due to the e?cient carrier injection and transport. The results provide useful information for fabricating high-performance QLEDs.
关键词： Optimization,Hole transport layer,Light-emitting diodes,Quantum-dots,Hole injection layer
更新于2025-09-16 10:30:52
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Quantum-dot light-emitting diodes with NiO and NiO:Mg as hole injection layer
摘要： Quantum-dot light-emitting diodes （QLED） have attracted great attention due to their impressive optoelectronic properties and stability. The most common used hole injection layer (HIL) material Poly(3,4-ethylenedioxytiophene):polystyrene sulfonate (PEDOT:PSS) is acidic and causes corrosion of indium-tin-oxide (ITO) anodes. Nickle oxide (NiO) are widely used as the hole transport layer (HTL) in QLED due to their suitable electrical properties. For the large energy gap between QD and HTL, there is unbalanced charge injection in QLED device when NiO is used. The energy band structures of NiO can be adjusted by Mg doping, which is an effective strategy to improve charge injection and mobility. Compared to undoped HIL, device with doped NiO give rise to higher EQE. In this work, our results suggests that Mg-doped NiO serve as a good hole injection layer materials for QLED and other optoelectronic devices.
关键词： QLED,hole injection layer,Mg-doped NiO
更新于2025-09-16 10:30:52
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Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes
摘要： The external quantum ef?ciency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection ef?ciency and better electron con?nement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.
关键词： external quantum efficiency,electron confinement,GaInN,hole injection efficiency,light-emitting diodes,p-type ZnO
更新于2025-09-16 10:30:52
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Efficient and Stable Inverted Quantum Dot Light-Emitting Diodes Enabled by An Inorganic Copper-Doped Tungsten Phosphate Hole-Injection Layer
摘要： Inorganic interfacial buffer layers have widely been employed for efficient and long lifetime optoelectronic devices due to their high carrier mobility and excellent chemical/thermal stability. In this paper, we developed a solution-processed inorganic tungsten phosphate (TPA) as hole injection layer (HIL) in inverted quantum dot light-emitting diodes (QLEDs) achieving a high external quantum efficiency (EQE) of up to ~20%. Further, the copper ions are doped into tungsten phosphate (Cu:TPA) which leads to an enhancement in hole injection due to increased hole mobility and conductivity of TPA as well as decreased hole injection barrier, enabling better charge balance in QLEDs and lower turn-on voltage from 5 to 2.5 V. Compared with the devices using conventional organic poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate) (PEDOT:PSS) HIL, the half-lifetime of Cu:TPA-based devices is over 3000 h at an initial brightness of 100 cd m-2, almost five-fold operating lifetime enhancement.
关键词： Quantum Dot LEDs,Hole Injection Layer,Copper Doping,Tungsten Phosphate,Electroluminescence
更新于2025-09-16 10:30:52
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Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs
摘要： In this study, we demonstrated the feasibility of using tetrahedral amorphous carbon (ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dots light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing or any other post-treatment, reasonable electrical conductivity, optical transmittance, good chemical stability, and a high work function. Therefore, we present a simple and effective method to improve the performance of PSCs and QDLEDs by applying ta-C films as a HTL. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp3/sp2 hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance 10.33 Ohm/square, a resistivity of 1.34 × 10-4 Ohm-cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than performance of QDLEDs with different ta-C thicknesses. It is concluded that FCVA grown ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.
关键词： Perovskite solar cells,Hole transport layer (HTL),Quantum dots LEDs,Tetrahedral amorphous carbon (ta-C) film,Hole injection layer (HIL)
更新于2025-09-12 10:27:22
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Efficient and bright phosphorescent organic light-emitting diodes adopting MoO <sub/>3</sub> /PEDOT:PSS as dual hole injection layers
摘要： It has been demonstrated that high efficiency and brightness can be achieved in phosphorescent organic light-emitting diodes (PHOLEDs) by using molybdenum oxide (MoO3)/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) as dual hole injection layers (HILs) on indium tin oxide (ITO) substrate. The dual HILs were simply fabricated by spin-coating PEDOT:PSS solution on a thin MoO3 layer deposited by vacuum thermal evaporation. This work reveals that PEDOT:PSS coating on MoO3 resulted in a smoother surface, simultaneously MoO3 lamella prevented acid corrosion of PEDOT:PSS on ITO. Meanwhile, with the insertion of PEDOT:PSS and MoO3 as HILs between anode and hole transporting layer (HTL), the energy barrier has been reduced and gave rise to effective hole injection. OLEDs with dual HILs resulted in the maximum current efficiency (CE) of 61.3 cd A?1 and maximum luminance of 112200 cd cm?2, which showed a superior performance compared to those devices with single HIL of PEDOT:PSS or MoO3. Our results proved the composition of PEDOT:PSS and MoO3 as HILs were beneficial for high performance OLEDs.
关键词： PEDOT:PSS,MoO3,dual hole injection layers
更新于2025-09-12 10:27:22
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Organic light-emitting diodes with an electro-deposited copper(I) thiocyanate (CuSCN) hole-injection layer based on aqueous electrolyte
摘要： Copper(I) thiocyanate (CuSCN) has been drawing much attention in optoelectronics due to its exceptional optical and electrical properties, as well as its processing versatility. The first organic light-emitting diodes (OLEDs) integrated with electro-deposited CuSCN crystalline thin films based on aqueous electrolyte were fabricated. With precisely tuned deposition parameters, the CuSCN thin films with satisfactory surface roughness and sufficient grain density were realized. We found that the driving voltage (voltage at a current density of 100 mA/cm2) and turn-on voltage of OLEDs using CuSCN as the hole injection layer (HIL) can be reduced by 1.41 and 1.79 V, respectively, compared with devices using vacuum-deposited hole injecting transition metal oxide molybdenum trioxide (MoO3). Moreover, the fabricated OLEDs also demonstrated considerably mitigated efficiency roll-off. Optical and energetic analyses were conducted to investigate the characteristics and enhancement mechanisms. Efficient hole-injection, electron blocking, improved charge balance, enhanced optical properties and good compatibility of electro-deposited CuSCN with thermally evaporated organic systems were found to be the primary contributors for the performance improvements of the OLEDs.
关键词： Electro-deposition,CuSCN,Hole injection,Organic-inorganic hybrid system,Organic light-emitting diodes,Copper(I) thiocyanate
更新于2025-09-11 14:15:04
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Effect of Metal Electrodes on Aging-Induced Performance Recovery in Perovskite Solar Cells
摘要： For commercialization of perovskite solar cells, it is important to substitute the alternative electrode for Au to decrease the unit cost. From the early stage, Ag exhibits a potential to be a good counter electrode in perovskite solar cells, however there is an abnormal s-shaped J-V curve with Ag electrode, and it is recovered as time passed. The perception of the aging-induced recovery process and refutation for raised stability issues are required to commercial application of Ag electrodes. Herein, we compared the aging effect of perovskite solar cells with Ag and Au electrodes and found that only devices with Ag electrodes have dramatical aging-induced recovery process. We observed the change of photo-electronic properties only in the devices with Ag electrodes as time passes which mainly contribute to recovery of s-shaped J-V curve. We verified the work function change of aged Ag electrode and its mechanism by photoelectron spectroscopy analysis. By comparing the light stability under 1-sun intensity illumination we can assure the practical stability of Ag electrodes in case of being encapsulated. This work suggests the profound understanding of aging-induced recovery process of perovskite solar cells, and the possibility of commercial application of Ag electrodes.
关键词： Perovskite solar cells,Hole injection,Interfacial reaction,Metal electrodes,Work function
更新于2025-09-11 14:15:04