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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Room Temperature Processed Transparent Cu-Zn-S Nanocomposites as Hole Transport Materials in CdTe Photovoltaics
摘要： Here, we report room temperature processed Cu-Zn-S ternary thin films fabricated using SILAR method as a back-contact hole transport layer in cadmium telluride (CdTe) solar cells. These Cu-Zn-S films are transparent to visible region with compact grains, and high conductivity. X-ray diffraction (XRD) measurements shows the crystalline nature of the as-deposited Cu-Zn-S films. The Cu-Zn-S nanocomposite as a back contact buffer layer in CdTe devices improves the device performance to 12.7% (average 12.4%) from 10.4% (average 9.8%) compared to a Au only back contact and is comparable to Cu/Au back contact (thermally evaporated). The temperature dependence current voltage characteristics shows the reduced back barrier height compared to Au only and Cu/Au back contact.
关键词： SILAR,Cu-Zn-S,back contact,hole transport layer (HTL),solar cells
更新于2025-09-23 15:21:01
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Tetrahedral amorphous carbon prepared filter cathodic vacuum arc for hole transport layers in perovskite solar cells and quantum dots LEDs
摘要： In this study, we demonstrated the feasibility of using tetrahedral amorphous carbon (ta-C) films coated through the filtered cathodic vacuum arc (FCVA) process as a hole transport layer (HTL) for perovskite solar cells (PSCs) and quantum dots light-emitting diodes (QDLEDs). The p-type ta-C film has several remarkable features, including ease of fabrication without the need for thermal annealing or any other post-treatment, reasonable electrical conductivity, optical transmittance, good chemical stability, and a high work function. Therefore, we present a simple and effective method to improve the performance of PSCs and QDLEDs by applying ta-C films as a HTL. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy examinations show that the electrical properties (sp3/sp2 hybridized bond) and work function of the ta-C HTL are appropriate for PSCs and QDLEDs. In addition, in order to correlate the performance of the devices, the optical, surface morphological, and structural properties of the FCVA-grown ta-C films with different thicknesses (5 ~ 20 nm) deposited on the ITO anode are investigated in detail. The optimized ta-C film with a thickness of 5 nm deposited on the ITO anode had a sheet resistance 10.33 Ohm/square, a resistivity of 1.34 × 10-4 Ohm-cm, and an optical transmittance of 88.97%. Compared to the reference PSC with p-NiO HTL, the PSC with 5 nm thick ta-C HTL yielded a higher power conversion efficiency (PCE, 10.53%) due to its improved fill factor. Further, performance of QDLEDs with 5 nm thick ta-C hole injection layers (HIL) showed better than performance of QDLEDs with different ta-C thicknesses. It is concluded that FCVA grown ta-C films have the potential to serve as HTL and HIL in next-generation PSCs and QDLEDs.
关键词： Perovskite solar cells,Hole transport layer (HTL),Quantum dots LEDs,Tetrahedral amorphous carbon (ta-C) film,Hole injection layer (HIL)
更新于2025-09-12 10:27:22