[IEEE 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Kiev (2018.4.24-2018.4.26)] 2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO) - Research of the AlGaAs Impulse Properties

摘要： The impulse properties of AlxGa1-xAs (at x = 0.225) are investigated by research of the "overshoot" effect of the charge carriers drift velocity. The effect of the rectangular electric field pulse parameters on the temporal and spatial distribution of the drift velocity is carried out by the numerical experiment. The impulse properties of Al0.225Ga0.775As and gallium arsenide are compared.