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Light-driven fine chemical production in yeast biohybrids
摘要： Inorganic-biological hybrid systems have potential to be sustainable, efficient, and versatile chemical synthesis platforms by integrating the light-harvesting properties of semiconductors with the synthetic potential of biological cells. We have developed a modular bioinorganic hybrid platform that consists of highly efficient light-harvesting indium phosphide nanoparticles and genetically engineered Saccharomyces cerevisiae, a workhorse microorganism in biomanufacturing. The yeast harvests photogenerated electrons from the illuminated nanoparticles and uses them for the cytosolic regeneration of redox cofactors. This process enables the decoupling of biosynthesis and cofactor regeneration, facilitating a carbon- and energy-efficient production of the metabolite shikimic acid, a common precursor for several drugs and fine chemicals. Our work provides a platform for the rational design of biohybrids for efficient biomanufacturing processes with higher complexity and functionality.
关键词： fine chemical production,NADPH regeneration,light-driven,biohybrid,indium phosphide,shikimic acid,yeast
更新于2025-09-10 09:29:36
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Preparation of Indium Phosphide Substrates for Epilayer Growth
摘要： We have carried out an integrated study of technological steps in the preparation of indium phosphide substrates for the epitaxial growth of heterostructures. We have investigated the surface morphology and condition of indium phosphide in (100)-oriented substrates and tested various chemical etchants for final chemical surface processing. Our results demonstrate that an optimal substrate preparation process is two-step chemical–mechanical polishing on both sides using zeolite slurries, with chemical polishing in a mixture of bromine and isopropanol as the final step.
关键词： epitaxy,indium phosphide,semiconductor heterostructures,etching
更新于2025-09-10 09:29:36
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Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes
摘要： Recent research on nanowires (NWs) demonstrated the ability of III-V semiconductors to adopt a different crystallographic phase when they are grown as nanostructures, giving rise to a novel class of materials with unique properties. Controlling the crystal structure however remains difficult and the geometrical constraints of NWs cause integration challenges for advanced devices. Here, we report for the first time on the phase-controlled growth of micron-sized planar InP films by selecting confined growth planes during template-assisted selective epitaxy. We demonstrate this by varying the orientation of predefined templates, which results in concurrent formation of zinc-blende (ZB) and wurtzite (WZ) material exhibiting phase purities of 100% and 97%, respectively. Optical characterization revealed a 70 meV higher band gap and a 2.5x lower lifetime for WZ InP in comparison to its natural ZB phase. Further, a model for the transition of the crystal structure is presented based on the observed growth facets and the bonding configuration of InP surfaces.
关键词： template-assisted selective epitaxy,zinc-blende,crystal structure,indium phosphide,wurtzite
更新于2025-09-10 09:29:36
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Fabrication of star-shaped InP/GaInAs core-multishell nanowires by self-catalytic VLS mode
摘要： We successfully fabricated core-multishell nanowires using low-pressure metal organic vapor phase epitaxy (MOVPE) in self-catalytic vapor-liquid-solid (VLS) mode. The central core consists of an InP nanowire, and the shells are composed of alternating InP and GaInAs layers. The dependence of the shape and optical characteristics of the nanowires on the number of InP/GaInAs periods were investigated. By increasing the shell-periods, we observed a star-shaped cross section. The optical characteristics of the nanowires were investigated by room-temperature photoluminescence (PL) spectroscopy. The number of PL peaks was found to increase with increasing number of periods, and the peaks became redshifted.
关键词： A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III-V materials,A1. Nanostructures,B2. Semiconducting indium phosphide
更新于2025-09-04 15:30:14