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Three-dimensional Nanoscale Mapping of Porosity in Solution-Processed ITO Multilayer Thin Films for Patternable Transparent Electrodes
摘要： Indium tin oxide (ITO) films constitute components of many layered heterostructures used for emergent technologies beyond conventional optoelectronics. Compositional and morphological changes have a direct impact on the device’s performance. Hence control over the morphology with advanced multimodal characterization approaches are required to evaluate the devices. Herein multilayer ITO films deposited by spin coating were quantified in nanoscale detail in three dimensions by combining results from depth-sensitive neutron reflectometry (NR), non-contact topographic AFM images and cross-sectional SEM images. Films with different number of deposited layers were visually transparent even though the topmost layer was as high as 60% porous, with porosity gradually decreasing as the number of the underneath sublayers increased. Surface and interfacial roughness through the total film and individual layer thickness were obtained. NR data also furnished quantitative depth information on the films chemical composition and layer-by-layer bulk density, which has never been obtained before, providing a way to monitor and ultimately control the sheet resistivity via the pore network. When the same formulation is used for inkjet printing patterns, the larger pores disappear and the optical properties are improved to >90% transmittance at all visible wavelengths. All 5L films achieved sheet resistivities as low as 10-2 ?-cm and can therefore be used as patternable transparent electrodes for many devices including liquid crystal displays.
关键词： thin multilayer film,neutron reflectometry,depth density distribution,neutron absorption reflectometry,Indium tin oxide,porosity,structure chemical depth profile,off-specular neutron scattering,layer by layer deposition
更新于2025-11-19 16:56:35
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Deposition of gold nanoparticles upon bare and indium tin oxide film coated glass based on annealing process
摘要： We presented a simple and efficient strategy for deposition of gold nanoparticles (AuNPs) upon transparent bare and indium tin oxide (ITO) film coated glass substrate using gold colloids as Au sources. The method involved two steps: embedding in polyvinyl alcohol (PVA) film and annealing at high temperature. The AuNPs deposited on solid substrate because of migration and coalescence of gold at high temperature. The optical and structural properties of the AuNPs were characterised by UV-vis absorption spectra and scanning electron microscopy. The results indicate that the surface of AuNPs upon substrate was clean as annealing at 600 °C for 0.5 h. The size of AuNPs deposited on ITO glass increased with annealing time and volume of PVA-AuNPs. Meanwhile, the localised surface plasmon resonance peak of AuNPs deposited on substrate was also gradual red-shift. In addition, the size of AuNPs deposited on ITO substrate was larger than that on bare glass. This work provides a simple, low-cost and large-scale method for fabrication of substrate-based AuNPs, which is benefit for exploiting biosensors, photonic devices and optoelectronic devices.
关键词： thermal annealing,solid substrate,Gold nanoparticles,indium tin oxide film coated glass
更新于2025-11-19 16:56:35
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Manufacturing of All Inkjet-Printed Organic Photovoltaic Cell Arrays and Evaluating their Suitability for Flexible Electronics
摘要： The generation of electrical energy depending on renewable sources is rapidly growing and gaining serious attention due to its green sustainability. With fewer adverse impacts on the environment, the sun is considered as a nearly infinite source of renewable energy in the production of electrical energy using photovoltaic devices. On the other end, organic photovoltaic (OPV) is the class of solar cells that offers several advantages such as mechanical flexibility, solution processability, environmental friendliness, and being lightweight. In this research, we demonstrate the manufacturing route for printed OPV device arrays based on conventional architecture and using inkjet printing technology over an industrial platform. Inkjet technology is presently considered to be one of the most matured digital manufacturing technologies because it offers inherent additive nature and last stage customization flexibility (if the main goal is to obtain custom design devices). In this research paper, commercially available electronically functional inks were carefully selected and then implemented to show the importance of compatibility between OPV material stacks and the device architecture. One of the main outcomes of this work is that the manufacturing of the OPV devices was accomplished using inkjet technology in massive numbers ranging up to 1500 containing different device sizes, all of which were deposited on a flexible polymeric film and under normal atmospheric conditions. In this investigation, it was found that with a set of correct functional materials and architecture, a manufacturing yield of more than 85% could be accomplished, which would reflect high manufacturing repeatability, deposition accuracy, and processability of the inkjet technology.
关键词： inkjet technology,flexible electronics,organic photovoltaics,Indium Tin Oxide (ITO) free solar cells
更新于2025-11-14 17:28:48
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Nanostructured Transparent Conductive Electrodes for Applications in Harsh Environments Fabricated via Nanosecond Laser‐Induced Periodic Surface Structures (LIPSS) in Indium–Tin Oxide Films on Glass
摘要： A self-organization phenomenon named laser-induced periodic surface structures (LIPSS) is utilized for pattern formation in indium–tin oxide (ITO) transparent conductive films coated on borosilicate glass. Stripe patterns with periodicities down to 175 nm are created by scanning the focused beam (30 μm spot diameter 1 e?2) of a nanosecond pulsed laser operating at 532 nm wavelength over ITO films. Highly ordered ITO-LIPSS are generated at a pulse duration of 6 ns, pulse frequencies between 100 and 200 kHz, pulse energies around 20 μJ, and laser spot scan speeds in the range of 50–80 mm s?1. Resulting nanopatterns are electrically conductive and feature improved optical transparency as well as stability against strong acids such as hydrochloric acid, sulfuric acid, and even aqua regia. The formation of mixed phases between ITO and silicon is considered to be the origin for the chemical robustness of laser patterned transparent conductive electrodes.
关键词： laser-induced periodic surface structures (LIPSS),laser patterning,self-organization,indium–tin oxide (ITO),transparent conductive films (TCF)
更新于2025-10-22 19:40:53
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Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
摘要： Indium oxide (IO) and indium tin oxide (ITO) are widely used in optoelectronics applications as a high quality transparent conducting oxide layer. A potential application of these coatings is for enhancing the electrical properties of spacecraft thermal radiator coatings, where dissipating built-up static charge is crucial. In this work, the authors investigated the thickness-dependent electrical and optical properties of IO thin films synthesized by atomic layer deposition (ALD) with the aim of finding the optimum condition for coating radiator pigments. Trimethylindium and ozone were used as precursors for IO, while a tetrakis(dimethylamino)tin(IV) source was used for Sn doping to produce ITO. As-deposited IO films prepared at 140 °C resulted in a growth per cycle of ~0.46 ?/cycle and film resistivity as low as 1.4 × 10^{-3} Ω cm. For the case of ITO thin films, an ALD process supercycle consisting of 1 Sn + 19 In cycles is shown to provide the optimum level of Sn doping corresponding to 10 wt. % widely reported in the literature.
关键词： atomic layer deposition,indium oxide,optoelectronics,transparent conducting oxides,thin films,indium tin oxide
更新于2025-09-23 15:23:52
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Preparation of Monodispersed Nanoparticles of Transparent Conductive Oxides
摘要： Generally, indium-tin-oxides (ITO) thin film is prepared by the sputtering process with ITO target, but only 20 % of ITO yielded from the target is deposited on the substrate. Namely, about 80 % ITO is exhausted by the deposition elsewhere far from the substrate. The recycling process of indium is limited so that ca. 20 % ITO of the starting material is lost without any recovery. Even if the recycling of ITO has been carried out in this process, we should prepare ITO target of 5 times more than apparent use of ITO on film. If we change it to printing process from the sputtering, the reduction in ITO use is expected as ca. 50 %, considering the increase in film thickness by printing. Our target technology also includes ITO nanoink for the project. As a result, monodispersed ITO nanoparticles (NPs) with a cubic shape were fabricated by using quaternary ammonium hydroxide-assisted metal hydroxide organogels. These NPs have perfect uniformity in size with beautiful shape, and perfect single crystalline structure including Sn. As we were attempted to make thin film with ITO nanoink, it was successfully fabricated below 200 nm in thickness and the resistivity was drastically decreased below 1.0 × 10–3 Ω cm after heat treatments. GZO nanoink as substitute of ITO has also been developed.
关键词： indium tin oxide,transparent conductive oxides,uniform nanoparticles,shape control
更新于2025-09-23 15:23:52
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Nonreciprocal optical links based on time-modulated nanoantenna arrays: Full-duplex communication
摘要： Interference of transmitted and received signals hinders the simultaneous functionality of a conventional optical antenna as a transmitter and receiver which is required for full-duplex communication. The full-duplex communication schemes enabled by dense wavelength division multiplexed optical networks require distinct transmitter/receiver components operating at different wavelengths which increase the cost, complexity, and footprint of the physical layer. In this work, we demonstrate that an array of nanoantennas with leaky-wave architecture based on spatiotemporal modulation establishes nonreciprocal optical links which can reject the interference of transmitted and received signals by isolating the frequency of transmission and reception modes. For this purpose, we integrate indium-tin oxide into plasmonic nanodipoles which allows for realization of time-modulated nanoantennas in near-infrared frequency regime through electrical modulation of charge carrier density with radio-frequency signals. The radiation characteristics of individual nanoantennas and modal properties of nanoantenna arrays are rigorously studied through linking of charge transport and electromagnetic models. To this end, we extend the formulation of discrete dipole approximation as the standard modeling tool for electromagnetic scattering from nanoantenna arrays to treat realistic time-modulated structures with drastically different timescales between optical and modulation frequencies. The operation of spatiotemporally modulated array antennas in transmission and reception modes is investigated. Moreover, electrical beam-scanning functionality and dependence of antenna characteristics to modulation parameters and wavelength are demonstrated. It is rigorously established that such array antennas can operate as full transceivers by separating the transmitted and received signals propagating along the same direction through down conversion and up conversion of the frequency. Our results provide a route toward realization of optical antenna systems capable of full-duplex communication and real-time beam scanning which can increase the capacity and decrease the complexity of optical networks.
关键词： nonreciprocal optical links,indium-tin oxide,leaky-wave antenna,discrete dipole approximation,full-duplex communication,time-modulated nanoantenna arrays,spatiotemporal modulation
更新于2025-09-23 15:23:52
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Transparent Conducting Oxides for Optoelectronics and Biosensing Applications
摘要： Transparent conducting oxides have excellent electrical and optical properties that can be exploited to enhance the performance of devices for a large variety of applications such as integrated optoelectronics, biosensing, light detection or resistive memories. In addition, they have also shown the ability to be integrated in silicon CMOS devices and therefore the potential for mass production. In this work, we will focus on ITO and ZnO for different application fields of integrated optoelectronics, memristors and biosensing.
关键词： biosensing,memristors,transparent conducting oxides,indium tin oxide,zinc oxide,switching
更新于2025-09-23 15:22:29
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Control of Structural and Electrical Properties of Indium Tin Oxide (ITO)/Cu(In,Ga)Se <sub/>2</sub> Interface for Transparent Back-Contact Applications
摘要： Development of transparent-conducting oxide (TCO) back contact for Cu(In,Ga)Se2 (CIGS) absorber is crucial for bifacial CIGS photovoltaics. However, GaOx formation at the TCO/CIGS interface has hampered the photocarrier extraction. Here, by controlling the Na doping scheme, we show that the hole transporting properties at the indium?tin oxide (ITO)/CIGS back contact can be substantially improved, regardless of the GaOx formation. Na incorporation from the glass substrate during the GaOx forming phase created defective states at the interface, which allowed efficient hole extraction from CIGS, while post Na treatment after GaOx formation did not play such a role. Furthermore, we discovered that an almost GaOx-free interface could be made by reducing the underlying ITO film thickness, which revealed that ITO/CIGS junction is inherently Schottky. In the GaOx-free condition, post-Na treatment could eliminate the Schottky barrier and create ohmic junction due to generation of conducting paths at the interface, which is supported by our photoluminescence analysis.
关键词： Schottky barrier,indium-tin oxide,photovoltaics,Na doping,Ga)Se2,ohmic contact,GaOx,transparent-conducting oxide,Cu(In
更新于2025-09-23 15:22:29
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The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics
摘要： In this paper, several fundamental pseudo-CMOS digital circuits with n-type indium tin oxide-stabilized ZnO thin-film transistors (TFTs) were implemented and investigated. The optical transmittance of circuits varied from 77% to 92% throughout the visible wavelength band. Electrically, the operation frequency of inverters, nor gates, nand gates, D latches, and D flip flops were all found to exceed 10 kHz with a supply voltage of 10 V. Besides, 13-stage ring oscillators could be operated at 42 kHz with a propagation delay time of 0.92 μs when the supply voltage was set as 20 V. Among the state-of-the-art transparent designs, these proposed circuits based on the ITO-stabilized ZnO TFTs exhibited high-speed performance, which were promising as building blocks for transparent electronics with moderate frequency requirements.
关键词： transparent electronics,Digital circuits,indium tin oxide-stabilized ZnO,thin-film transistors (TFTs),ring oscillator (RO)
更新于2025-09-23 15:22:29